CR05AS Search Results

MCR100

Abstract: SCR PNPN CR05AS CR05AS-4 SCR TRIGGER PULSE circuit CR05AS-8 cr05as-6
Contextual Info: CR05AS Series MCR100 Series i Sensitive Gate Silicon Controlled Rectifiers SCR 0.8 AMPERES RMS 300 thru 800 VOLTS Reverse Blocking Thyristors PNPN devices designed for high volume, line-powered consumer applications such as relay and lamp drivers, small motor controls, gate

Contextual Info: Preliminary Datasheet CR05AS-8 R07DS0135EJ0500 Previous: REJ03G0348-0400 Rev.5.00 Sep 15, 2010 Thyristor Low Power Use Features • Non-Insulated Type  Planar Passivation Type  Surface Mounted type  IT (AV) : 0.5 A  VDRM : 400 V  IGT : 100 A

CR05A

Abstract: CR05AS-8 CR05AS-8-ET14 LZZ0004CB-A cr05as RENESAS UPAK MARK V1
Contextual Info: Preliminary Datasheet CR05AS-8 R07DS0135EJ0500 Previous: REJ03G0348-0400 Rev.5.00 Sep 15, 2010 Thyristor Low Power Use Features • Non-Insulated Type  Planar Passivation Type  Surface Mounted type  IT (AV) : 0.5 A  VDRM : 400 V  IGT : 100 A

CR05AS-8

Abstract: CR05AS-8-ET14 RENESAS SOT-89 V1 SOT-89 MARK V1 CR05A
Contextual Info: CR05AS-8 Thyristor Low Power Use REJ03G0348-0300 Rev.3.00 Mar 22, 2007 Features • IT AV : 0.5 A • VDRM : 400 V • IGT : 100 µA • Non-Insulated Type • Planar Passivation Type Outline RENESAS Package code: PLZZ0004CA-A (Package name: UPAK) 1 2 RENESAS Package code: PLZZ0004CB-A

T3D 1N

Contextual Info: MITSUBISHI SEMICONDUCTOR THYRISTOR CR05AS LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE CR05AS OUTLINE DRAWING Dimensions in mm 4.4±0.1 1.5±0.1 1 . 6 ± 0.2 1 J r iin n ln t: 0 .5 ± 0 .0 7 \— \ 0 .4 ± 0 .0 7 -h i p1.5±0.1 1.5±0.1

Contextual Info: CR05AS-8 Thyristor Low Power Use REJ03G0348-0100 Rev.1.00 Aug.20.2004 Features • IT AV : 0.5 A • VDRM : 400 V • IGT : 100 µA • Non-Insulated Type • Planar Passivation Type Outline SOT-89 2, 4 4 1 2 3 3 1. 2. 3. 4. Cathode Anode Gate Anode 1 Applications

RENESAS UPAK V1

Abstract: CR05A
Contextual Info: CR05AS-8 Thyristor Low Power Use REJ03G0348-0400 Rev.4.00 Dec 10, 2008 Features • IT AV : 0.5 A • VDRM : 400 V • IGT : 100 µA • Non-Insulated Type • Planar Passivation Type Outline RENESAS Package code: PLZZ0004CA-A (Package name: UPAK) 1 2 G

thyristor sot-89

Abstract: CR05AS-8
Contextual Info: CR05AS-8 Thyristor Low Power Use REJ03G0348-0200 Rev.2.00 Mar.01.2005 Features • IT AV : 0.5 A • VDRM : 400 V • IGT : 100 µA • Non-Insulated Type • Planar Passivation Type Outline PLZZ0004CB-A (Package name: SOT-89) 2, 4 4 1 2 3 3 1. 2. 3. 4.

CR05AS-8

Abstract: CR05AS-8-ET14
Contextual Info: CR05AS-8 Thyristor Low Power Use REJ03G0543-0100 Rev.1.00 Mar.01.2005 Features • IT AV : 0.5 A • VDRM : 400 V • IGT : 100 µA • Non-Insulated Type • Planar Passivation Type Outline PLZZ0004CA-A (Package name: UPAK) 1 2 2, 4 3 4 3 1. 2. 3. 4. Cathode

thyristor sot-89

Abstract: CR05AS CR05A
Contextual Info: MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR05AS LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE CR05AS OUTLINE DRAWING Dimensions in mm 4.4±0.1 1.6±0.2 ➂ 2.5±0.1 ➁ 3.9±0.3 0.8 MIN ➀ 1.5±0.1 0.5±0.07 0.4 +0.03 –0.05 0.4±0.07 1.5±0.1 1.5±0.1

solid state flasher circuit 5A current

Abstract: CR05AS
Contextual Info: MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR05AS LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE CR05AS OUTLINE DRAWING Dimensions in mm 4.4±0.1 1.6±0.2 3 2.5±0.1 2 3.9±0.3 0.8 MIN 1 1.5±0.1 0.5±0.07 0.4 +0.03 –0.05 0.4±0.07 1.5±0.1 1.5±0.1

cr3am-8

Abstract: CR10C-8 CR10C8 CR3AM CR02AM-4 CR5AS8 CR8PM-8 CR20F8 CR08AS8 thyristor tt 86 n
Contextual Info: • L O W AND MEDIUM POWER FOR GENERAL USE Max. ratings Average ftapeMtivepMkr»xraewit«ae,Rifieti6« peak-off-»tese V rhk, V drm M Type No. CR02AM-4. 6. 8 Electrical characteristics Critical rate- Junction Critical rateof-rise of offon-current of-ose o! ern­ inperatun

RJH60F7

Abstract: rjh60f5 RJH60 RJH60F4 RJH60F7A BCR25KR RJH60F6 rjh1cf7 rjh60d2 RJK0652
Contextual Info: Solutions for Enhanced Power Management Power MOSFETs, TRIACs, Thyristors, and IGBTs System designs that save energy have valuable marketing advantages. Yet new products typically must deliver increasingly complex functionality and higher levels of performance — a combination that tends to

RJP63k2

Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
Contextual Info: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching

M52777SP

Abstract: M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p
Contextual Info: REFERENCE LIST T ype Page 2 S A 1 115 2SA1235 2 SA1235A 149 2 SC2237 *★ 2SA1282 2SA1282A 103 2 S C 5 1 25 149 2 S C 5 1 68 150 2 SC2320 150 2 SC 2320L 149 2 SC2538 2SA1283 2SA1284 2SA1285 149 2S C 2 6 03 149 2S C 2 6 27 2SA1285A 149 2 SC2628 2SA1286 153 AS 30

CR05AS

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

1002ds

Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Contextual Info: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2

rjh3047

Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing

zo405mf

Abstract: triac ZO405MF BTA16-600b application motor control SCR tyn612 BTB16-600bw application motor control BTa16-600bw application motor control BTA16-600B heating control diagram 220v dimmer light bt139 bta41-600b application BTA40-700B
Contextual Info: Thyristors and AC switches from SCRs and TRIACS to innovative devices USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED. STMicroelectronics PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF STMicroelectronics. As used herein:

R2J20071

Abstract: RJP4004ANS thyristor 12V 100A mosfet 600V 100A R2J2007 600V 100A thyristor thyristor battery charger 6 thyristor driver circuit R2J20071NS rjp4007
Contextual Info: April 2010 Renesas Electronics General-purpose Devices for Camera Strobe Achieving Smaller and Higher Efficiency Family Power MOSFET Thyristors IGBT Logic IC Features Low ON resistance, High-speed switching, Small package Large current control, Small package

RJJ0319DSP

Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
Contextual Info: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?

rjp6065

Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK
Contextual Info: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance

rjp3053

Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
Contextual Info: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5

rjh60f5

Abstract: RJH60F7 R2J240 R2J24020 HAT2292C HAT2286C HAT1146C RJH60 rjh60d7 RJH60F7ADPK
Contextual Info: Rev.27.01 2010.2.2 Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors General Presentation www.renesas.com Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors General Presentation January 2010 Standard Product Business Group 2/2/2010 Rev.27.01 2010. Renesas Technology Corp., All rights reserved.