BT5550 Search Results

marking code YV

Abstract: "MARKING CODE P" PMBT5550
Contextual Info: •i 0ü25flfl0 T^fl B A P X N AMER PHILIPS/DISCRETE P M BT5550 b7E J> SILICO N N -P -N H IG H -VO LTAG E TR A N S IS TO R N-P-N high-voltage small-signal transistor fo r general purposes and especially telephony applications and encapsulated in a SOT-23 envelope.

Contextual Info: N AUER PHILIPS/DISCRETE 25E D • ^53*131 a01b341 3 ■ Surface Mount Devices LOW-NOISE TRANSISTORS NF hFE t y p .a t lc dB pA mln/max* at I c ^ C E mA/V RATINGS TYPE P ACK A G E VCEO V Vc b O V •c mA : VCE sat max. at lc % V mA/mA h typ. MHZ PINOUT 5 SEE

transistors BC 557C

Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and

Contextual Info: 101 Surface Mount Devices High Voltage Transistors Ratings Type Package v CEO V v CBO V typ MHz Pinout See Section VII 3 0 /5 3 0 /5 3 0 /5 5 0 /5 60 60 60 100 AE R F F 10/1 200 F 5 0 /5 10/1 2 0 /2 2 0 /2 100 F 200 50 50 F F R 3 0 /5 60 AE 3 0 /5 3 0 /5 2 0 /2

Contextual Info: Philips Semiconductors Product specification PNP high-voltage transistor PMBT5401 FEATURES PINNING • Low curren t max. 300 mA PIN • High voltage (max. 150 V). APPLICATIONS DESCRIPTION 1 base 2 e m itte r 3 co lle cto r • S w itching and am plification in high voltage applications

tm 1621

Abstract: BD 811 BT3904 MBD6050 BF5484 2sa 2222a BTA 36 BF5457 1s2836 5T2907A
Contextual Info: C r o s s R e f e r e n c e Guide to M ini M old D e v ic e M o t o r o la NEC N o te M o t o r o la NEC N o te E u rop ean NEC None M M BT6429 N one B A T 18 2 S A 8 12 M M .B T A 0 5 N one BA V 70 152838 2 S A 8 12 M M BTA 06 None BA V 99 1SS123 ¿SA M M B A 8 LI

Contextual Info: M AXIM U M RA TIN G S Symbol Value Unit C o lle cto r-E m itte r Voltage VCEO 140 Vdc Collector-B ase V o ltage VCBO 160 Vdc Em itter-Base Voltage v EBO 6.0 Vdc ic 600 m A dc Symbol Max Unit Pd 225 mW 1.8 m W /X Rb j a 556 °C/W Pd 300 mW 2.4 mW/°C r #j a

2SC9014

Abstract: BEC npn 2SC9013 SOT-23 BTA43 BTA70 BA811 2SC1623L6 BT3904 BTA42 BT5551
Contextual Info: SOT-23 SMD Products Photograph of Products: Performance and Characteristics: NPN Silicon General Purpose Power Transistors Type Ptot Ic VCEO mW (mA) (V) hFE Polar 123 Type Ptot Ic VCEO (mW) (mA) (V) hFE Polar 123 2SC1623L3 225 100 40 60～90 BEC BCW60A 225

c5088 transistor

Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

f36 marking transistor

Abstract: MBT5550 mmbt5551 2n5550 sot23
Contextual Info: M O T O R O L A SC -CXSTRS/R F36 3 6 7 2 54 MOTOROLA SC Tb <XSTRS/fR F 96D 8 2 0 5 0 M A XIM U M RATINGS Sym bol Value Unit Collector-Emltter Voltage VCEO 140 Vdc Collector-Base Voltage VcBO 160 Vdc Emitter-Base Voltage vebo 6.0 Vdc ic 600 mAdc Sym bol Max

Contextual Info: DISCRETE SEMICONDUCTORS BITÂ S y i I T PMBT5401 PNP high-voltage transistor Product specification Supersedes data of 1997 Apr 09 Philips Sem iconductors 1999 Apr 15 PHILIPS Philips Semiconductors Product specification PNP high-voltage transistor PMBT5401