BSX61 Search Results

Contextual Info: BSX61 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 45V 0.41 (0.016) 0.53 (0.021)

bsx61

Abstract: BSX59
Contextual Info: Philips Semiconductors Product specification NPN switching transistors BSX59; BSX61 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 45 V). APPLICATIONS DESCRIPTION 1 emitter 2 base 3 collector, connected to case • High-speed switching in industrial applications.

BSX59

Abstract: BSX60 BSX61 iC-lg 10MA B2450 silicon planar epitaxial transistors MAX4530
Contextual Info: BSX59 to 61 PHILIPS INTERNATIONAL St>E » • 7110ßHb 0042422 STl MPHIN “F 2 7 - Z 3 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a TO-39 metal envelope with the collector connected to the case. The BSX59, BSX60 and BSX61 are primarily intended for very high speed core-driving purposes.

BSX59

Abstract: BSX61 BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BSX59; BSX61 NPN switching transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 22 Philips Semiconductors Product specification NPN switching transistors

BSX59

Abstract: bu 11 apx BSX60 WE VQE 11 E WE VQE 24 E BSX61 silicon planar epitaxial transistors
Contextual Info: N AMER PHI LI PS/DISCRETE b'IE D • 0027^33 T37 I IAPX BSX59 to 61 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a TO-39 metal envelope with the collector connected to the case. The BSX59, BSX60 and BSX61 are primarily intended for very high speed core-driving purposes.

BSX59

Abstract: BSX60 BSX61 TO-39 CASE 435-1824
Contextual Info: Bata Sheet BSX59 BSX60 BSX61 S e llllC D Iia U C IO i G O fp. NPN SILICON TRANSISTORS 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-39 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION The CENTRAL SEMICONDUCTOR BSX59 series types are NPN Silicon Transistors designed for high speed switching

Contextual Info: BSX61 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 45V 0.41 (0.016) 0.53 (0.021)

BSX61

Contextual Info: BSX61 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 45V 0.41 (0.016) 0.53 (0.021)

Contextual Info: N AMER PHILIPS/DISCRETE • LIE D bbS3^31 DD27T33 T37 BSX59 to 61 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a TO-39 metal envelope with the collector connected to the case. The BSX59, BSX60 and BSX61 are primarily intended for very high speed core-driving purposes.

tube az2

Abstract: 2n2389 2n2906 sis BSS68 BSW41 2N2369 2N2906 to92 BFX34 BSS38 BSW41A
Contextual Info: Transistors Type No. g s 3 o Drawing reference silicon low/medium power switching transistors book 1 parts 1 and 2 VCEJO VcEO <V V) Maximum Ratings IcM lc(AV) (mA) ImA) Hfe min. max. Ptot at 25°C (°C) <mW) Tj at •c fT VcE(sat) min. max. (mA) (MHz) (V)

transistor t2a

Abstract: 2n2206 TRANSISTOR ztx312 transistor 2N2475 N706A BSX12 2N2206 J 2N2369 BSV24 BSV25
Contextual Info: SILICON TRANSISTORS Planar Epitaxial High Speed Switching n-p-n Characteristics M axim um Ratings Type No. v CBO VCER Vebo P to t 25°C smb. fT min. Storajje Time t s ( i nax.) at l c mA MHz nS 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 20 150 150 10 200

BD320C

Abstract: 2N3725 tip122 tip127 BD321A TlPl22 2N3261 2N3512 2N3724 BD320A BD320B
Contextual Info: CORE DRIVERS TABLE 9 - N P N SILICON PLANAR HIGH SPEED CORE DRIVER TRANSISTORS The devices shown in this table are designed fo r use in fast, medium and high voltage, high current core driving applications where the high speed at high current capability is o f prime importance.

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

Katalog CEMI

Abstract: OA81 diode byp 660-50r Philips BC147 p 181 transoptor Mullard oa81 Hitachi 12V MS 5A-181 OA81 BA102 diode telefunken hr 780 rds
Contextual Info: WSTIJP W ydaw nictw a Przem yslu M aszynowego WEMA przekazujq uzytkow nikom branzow y katalog pt. E l e m e n t y pólp rz e w o d n i k o w e , zaw ierajqcy dokladne inform acje techniczne dotycz^ce elem entów pólprzew odnikow ych produkow anych w Polsce n a skal^ przem yslow ^. W szystkie w yroby

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

transistors BC 557C

Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and

BPW22A

Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Contextual Info: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey

Contextual Info: small signal Transistors D ESCR IPTIO N Vc b O VC EO v EB O V (V) (V) *V C ER hFE 'C B O v C B O ftiA ) (V) @ lc (m A) (V) m TY P E NO. < o T O -39 Case V C E (S A T) ® *C (V) (m A) *>CEO h C0 b ton toff NF (M H z) <PF) (ns) (ns) (dB ) *TY P *TY P

Contextual Info: Small signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION v CBO v CEO v EBO (V) (V) (V) *VCER •cao CnA> h HE VCBO (V) ® lc ® V GE VCE(SA T ) ® k ; *T (IDA) (m A) (M iz) (V) 00 U ce o NF (pF) •on (n«> *off (ns> (dB) *TYP *TYP •TYP *TYP

BD320C

Abstract: BD321A 2N3261 2N3512 2N3724 2N3725 BD320A BD320B BSX59 BSX60
Contextual Info: CORE DRIVERS TABLE 10 - NPN SILICO N PLANAR HIGH SPEED CORE DRIVER T R A N SIST O R S The devices show n in this table are designed for use in fast, medium and high voltage, high current core driving applications where the high speed at high current capability is of prime importance.

BSW65

Abstract: BSV12 BSW66 BSS46 BFX98 BFY64 BFX86 BFX87 BFX88 BFY50
Contextual Info: Small Signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION VCBO (V) VCEO (V) VEBO (V) *VCER ICBO @ µA) (µ VCB (V) *ICEO *ICES *ICEV *ICER hFE @ IC @ VCE VCE (SAT ) @ IC fT (mA) (V) (V) (mA) (MHz) Cob (pF) ton (ns) toff (ns) (dB) *TYP *TYP

2N3261

Abstract: 2N3512 2N3724 2N3725 BD320A BD320B BD320C BSX59 BSX60 BSX61
Contextual Info: CORE DRIVERS TABLE 9 - N P N SILICON PLANAR HIGH SPEED CORE DRIVER TRANSISTORS The devices shown in this table are designed for use in fast, medium and high voltage, high current core driving applications where the high speed at high current capability is of prime importance.