BSS13 Search Results

BSS138PW

Abstract: TRANSISTOR SMD CODE PACKAGE SOT323
Contextual Info: BSS138PW 60 V, 320 mA N-channel Trench MOSFET Rev. 1 — 2 November 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using

B5G1

Abstract: BSS138
Contextual Info: National May 1995 Semiconductor~ BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology. These products

bss138

Abstract: bss138 MARKING BSS138 SS all diodes ratings DMOS FET marking code SS SOT23 BSS138TA marking ss BSS138/BSS100 TO-92
Contextual Info: A Product Line of Diodes Incorporated BSS138 50V N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET IN SOT23 Features and Benefits Mechanical Data • • • • • • • • BVDSS > 50V RDS on ≤ 3.5Ω @ VGS= 5V Maximum continuous drain current ID = 200mA

bss138 MARKING

Abstract: bss138 k38 bss138 MARKING c38 BSS138 BSS138Q BSS138 equivalent BSS138Q-7-F marking k38 K38 mosfet
Contextual Info: BSS138 N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant Note 1

Contextual Info: MOSFET SMD Type Product specification BSS138 • Features SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● VDS V = 50V +0.1 1.3-0.1 +0.1 2.4-0.1 ● RDS(ON) ≤ 3.5Ω (VGS = 10V) 0.4 3 ● ID = 0.22 A 1 0.55 ● RDS(ON) ≤ 6Ω (VGS = 4.5V) 2 +0.1 0.95-0.1

BSS138LT1G

Abstract: BSS138LT1 BSS138LT3 BSS138LT3G
Contextual Info: BSS138LT1 Preferred Device Power MOSFET 200 mA, 50 V N−Channel SOT−23 Typical applications are DC−DC converters, power management in portable and battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.

Contextual Info: BSS138W N-Channel POWER MOSFET 3 DRAIN P b Lead Pb -Free 3 1 2 1 GATE Description: * Typical applications are dc–dc converters, power management in portable and battery–powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.

BSS138W

Abstract: BSS138W-7 J-STD-020A marking k38 sot-323
Contextual Info: BSS138W N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed A B C G Mechanical Data · · · · · · · · SOT-323 D Case: SOT-323, Molded Plastic

marking code ss

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BSS138 Features • • • • • • • N-Channel Enhancement Mode High dense cell design for extremely low RDS ON

Contextual Info: BSS138 Small Signal MOSFET N-Channel 3 DRAIN * “G” Lead Pb -Free Features: SOT-23 3 1 *Low On-Resistance : 3.5 Ω *Low Input Capacitance: 40PF *Low Out put Capacitance : 12PF *Low Threshole :1 .5V *Fast Switching Speed : 20ns GATE 1 2 2 SOURCE Application:

SOT23 marking skS

Abstract: Q67042-S4184 diode sot-23 marking AG SKs SOT23 D023 BSS138N SKs 83 SKs TRANSISTOR E6327 marking code SKs
Contextual Info: BSS138N SIPMOS Small-Signal-Transistor Product Summary Features • N-channel • Enhancement mode V DS 60 V R DS on ,max 3.5 Ω ID 0.23 A • Logic level • dv /dt rated SOT-23 Type Package Ordering Code Tape and Reel Information Marking BSS138N SOT-23

Contextual Info: BSS13 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)60 I(C) Max. (A) Absolute Max. Power Diss. (W)5.0 Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A)500nØ @V(CBO) (V) (Test Condition)

marking code ss

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BSS138 Features • • • • • • • • N-Channel Enhancement Mode Halogen free available upon request by adding suffix "-HF"

bss138 MARKING

Abstract: BSS138
Contextual Info: BSS138 GENERAL FEATURES ● VDS = 50V,ID = 0.22A RDS ON < 6Ω @ VGS=4.5V RDS(ON) < 3.5Ω @ VGS=10V ESD Rating：1000V HBM ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Schematic diagram APPLICATION

BSS138

Contextual Info: BSS138 N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) 50V 0.22A SOT-23 RDS(ON) (Ω) Max D 3.5 @VGS = 10V G 6.0 @VGS = 4.5V S D FEATURES ◆ Super high dense cell design for low RDS(ON). G ◆ Rugged and reliable. ◆ SOT-23 package. S o ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted)

BSS138W

Abstract: gd 241 c L6327 DS48
Contextual Info: BSS138W SIPMOS Small-Signal-Transistor Product Summary Features • N-channel • Enhancement mode V DS 60 V R DS on ,max 3.5 Ω ID 0.28 A • Logic level • dv /dt rated • Pb-free lead-plating; RoHS compliant PG-SOT-323 Type Package Tape and Reel Marking

BSS131 L6327

Abstract: BSS131 L6327 PG-SOT23 V8192 d01a
Contextual Info: Type BSS131 SIPMOS Small-Signal-Transistor Product Summary Feature • N-Channel • Enhancement mode V DS 240 V R DS on ,max 14 Ω ID 0.1 A • Logic level • dv /dt rated • Pb-free lead-plating; RoHS compliant PG-SOT-23 Type Package Pb-free Tape and Reel Information

Contextual Info: SIEMENS SIPMOS Small-Signal Transistor BSS135 600 V • ^DS • Id 0.080 A • -^DS on 60 a • N channel • Depletion mode • High dynamic resistance • Available grouped in VGs(th) Type BSS 135 Ordering Code Pin C onfigu ration Marking Tape and Reel

BSS139

Abstract: E6327 Q62702-S612 BSS139 SOT23 diode sot-23 marking AG MARKING CODE br 13 SOT23
Contextual Info: BSS139 SIPMOS Small-Signal-Transistor Product Summary Features • N-channel • Depletion mode V DS 250 V R DS on ,max 30 Ω I DSS,min 0.03 A • dv /dt rated SOT-23 Type Package Ordering Code Tape and Reel Information Marking BSS139 SOT-23 Q62702-S612

transistor bss138

Abstract: bss138 bss138 MARKING BSS138 SS
Contextual Info: BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance

Silicon N-Channel Junction FET sot23

Abstract: bss138 MARKING transistor bss138 BSS138
Contextual Info: Philips Components Data sheet status Preliminary specification date of issue September 1990 FEATURES BSS138 N-channel enhancement mode vertical D-MOS FET PINNING - SOT223 PIN CONFIGURATION • Low threshold voltage • CMOS compatible • Low on-resistance.

SOT23 marking skS

Abstract: SKs SOT23 BSS138N marking code SKs Q67042-S4184 BSS138N Q67042-S41 sks 46 SKs TRANSISTOR E6327
Contextual Info: Rev. 2.0 BSS138N SIPMOS Small-Signal-Transistor Feature Product Summary • N-Channel VDS 60 V • Enhancement mode RDS on 3.5 Ω • Logic Level ID 0.23 A • dv/dt rated SOT23 Drain pin 3 Gate pin1 Source pin 2 Type Package Ordering Code Tape and Reel Information

BSS138

Contextual Info: BSS138 50V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES 0.120 3.04 • RDS(ON), VGS@2.5V,IDS@100mA=6Ω 0.110(2.80) • Advanced Trench Process Technology 0.006(0.15)MIN. • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω

Contextual Info: BSS138 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR SPICE MODEL: BSS138 Features • · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage SOT-23 A D B Mechanical Data · · · ·