BSS138W Search Results

Contextual Info: BSS138W N-Channel POWER MOSFET 3 DRAIN P b Lead Pb -Free 3 1 2 1 GATE Description: * Typical applications are dc–dc converters, power management in portable and battery–powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.

BSS138W

Abstract: BSS138W-7 J-STD-020A marking k38 sot-323
Contextual Info: BSS138W N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed A B C G Mechanical Data · · · · · · · · SOT-323 D Case: SOT-323, Molded Plastic

BSS138W

Abstract: gd 241 c L6327 DS48
Contextual Info: BSS138W SIPMOS Small-Signal-Transistor Product Summary Features • N-channel • Enhancement mode V DS 60 V R DS on ,max 3.5 Ω ID 0.28 A • Logic level • dv /dt rated • Pb-free lead-plating; RoHS compliant PG-SOT-323 Type Package Tape and Reel Marking

BSS138W

Abstract: BSS138* spice model BSS138W-7 BSS138W-7-F
Contextual Info: SPICE MODELS: BSS138W BSS138W N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · Low On-Resistance A Low Gate Threshold Voltage Low Input Capacitance Dim Min Max Fast Switching Speed A 0.25 0.40 B 1.15 1.35 C 2.00 2.20 B C Available in Lead Free/RoHS Compliant Version Note 4

BSS138W

Abstract: D028 E6327 D003 SOT sws sot-323
Contextual Info: BSS138W SIPMOS Small-Signal-Transistor Product Summary Features • N-channel • Enhancement mode V DS 60 V R DS on ,max 3.5 Ω ID 0.28 A • Logic level • dv /dt rated SOT-323 Type Package Ordering Code Tape and Reel Information Marking BSS138W SOT-323

PRODUCT MARKING CODE 38W

Contextual Info: BSS138W 50V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-323 FEATURES Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@2.5V,IDS@100mA=6Ω 0.087(2.20) 0.070(1.80) • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance

Contextual Info: BSS138W 50V N-Channel Enhancement Mode MOSFET - ESD Protected • Maximum Ratings and Thermal Characteristics TA=25OC unless otherwise noted PA RA M E TE R S ym b o l L i mi t Uni ts D r a i n- S o ur c e Vo lta g e V DS 50 V Ga te - S o ur c e Vo lta g e

sot323 diode marking 38w

Abstract: MARKING 38W PRODUCT MARKING CODE 38W
Contextual Info: BSS138W 50V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-323 FEATURES Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@2.5V,IDS@100mA=6Ω 0.087(2.20) 0.070(1.80) • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance

spice model BSS138W

Abstract: TRANSISTOR K38 BSS138* spice model BSS138W BSS138W-7 BSS138W-7-F J-STD-020A
Contextual Info: SPICE MODELS: BSS138W BSS138W N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Also Available in Lead Free Version A B C G Mechanical Data ·

BSS138W

Contextual Info: BSS138W N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Also Available in Lead Free Version A B C G Mechanical Data · · · · · · · · ·

sot323 diode marking 38w

Contextual Info: BSS138W 50V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@2.5V,IDS@100mA=6Ω 0.087(2.20) 0.070(1.80) • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance

Q67042-S4187

Abstract: BSS138W E6327 VSO05561 D02A marking code fs 1 sot 323 BSS138W G F1 SOT-323 sws sot-323
Contextual Info: BSS138W Rev. 1.0 SIPMOS Ò Small-Signal-Transistor Feature Product Summary • N-Channel VDS 60 V RDS on 3.5 W ID 0.28 A · Enhancement mode · Logic Level · dv/dt rated SOT-323 3 Drain pin 3 Gate pin1 Source pin 2 2 1 VSO05561 Type Package Ordering Code

BSS138W

Abstract: L6327 D028 diode
Contextual Info: BSS138W SIPMOS Small-Signal-Transistor Product Summary Features • N-channel • Enhancement mode V DS 60 V R DS on ,max 3.5 Ω ID 0.28 A • Logic level • dv /dt rated • Pb-free lead-plating; RoHS compliant PG-SOT-323 Type Package Tape and Reel Marking

Contextual Info: BSS138W N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed A B C G Mechanical Data · · · · · · · · SOT-323 D Case: SOT-323, Molded Plastic

K38 mosfet

Abstract: BSS138W
Contextual Info: BSS138W N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Lead Free/RoHS Compliant Note 1 "Green" Device (Notes 2 and 3) Case: SOT-323

Contextual Info: BSS138W N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Lead Free/RoHS Compliant Note 1 "Green" Device (Notes 2 and 3) Case: SOT-323

Contextual Info: BSS138W SIPMOS Small-Signal-Transistor Product Summary Features • N-channel • Enhancement mode V DS 60 V R DS on ,max 3.5 Ω ID 0.28 A • Logic level • dv /dt rated • Pb-free lead-plating; RoHS compliant PG-SOT-323 • Qualified according to AEC Q101

dd1270

Abstract: BSS138W BSS138W G
Contextual Info: BSS138W SIPMOS Small-Signal-Transistor Product Summary Features • N-channel • Enhancement mode V DS 60 V R DS on ,max 3.5 Ω ID 0.28 A • Logic level • dv /dt rated PG-SOT-323 Type Package Tape and Reel Marking BSS138W PG-SOT-323 SWs BSS138W PG-SOT-323

D028 diode

Abstract: dd1270 BSS138W
Contextual Info: BSS138W SIPMOS Small-Signal-Transistor Product Summary Features • N-channel • Enhancement mode V DS 60 V R DS on ,max 3.5 Ω ID 0.28 A • Logic level • dv /dt rated • Pb-free lead-plating; RoHS compliant PG-SOT-323 Type Package Tape and Reel Marking

WT1 MARKING CODE

Contextual Info: WILLAS FM120-M+ BSS138WT1 THRU FM1200-M+ Power MOSFET 200 mAmps, 50 Volts 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.

TRANSISTOR K38

Abstract: marking k38 sot-323
Contextual Info: BSS138W N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Lead Free/RoHS Compliant Note 4

TD 367C

Abstract: dual gate n-channel mosfet transistor BSS138W
Contextual Info: BSS138W N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistor. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.These products are particularly suited for low voltage, low current

equivalent transistor k38

Abstract: BSS138W marking code MS SOT323 marking k38
Contextual Info: BSS138W N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • Mechanical Data • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Lead Free/RoHS Compliant Note 4 "Green" Device (Note 5 and 6)

dd1270

Abstract: Q67042-S4187 BSS138W
Contextual Info: BSS138W SIPMOS Small-Signal-Transistor Product Summary Features • N-channel • Enhancement mode V DS 60 V R DS on ,max 3.5 Ω ID 0.28 A • Logic level • dv /dt rated • Pb-free lead-plating; RoHS compliant PG-SOT-323 Type Package Ordering Code Tape and Reel Information