BGA37 Search Results

Contextual Info: PC board footprint Philips Semiconductors Footprint information for reflow soldering of BGA376 package SOT741-1 Hx P P Hy see detail X Generic footprint pattern Refer to the package outline drawing for actual layout solder land solder paste deposit solder land plus solder paste

Contextual Info: TRAY CONTAINER UNIT : mm 3 x 7=21 NEC 80.0 135° C MAX. A' 37.70 40.00 37.50 37.70 27.95 7 BGA37.5 × 37.5A 40.00 135.9 PPE A 240.0 315.0 322.6 SECTION A-A' 3.92 (6.35) 7.62 37.70 Applied Package Quantity (pcs) 1296-pin Plastic BGA (37.5×37.5) (FLIP CHIP TYPE)

BGA376

Abstract: MS-034 sot741 MS 034
Contextual Info: PDF: 2002 Jan 14 Philips Semiconductors Package outline BGA376: plastic ball grid array package; 376 balls; body 23 x 23 x 1.75 mm SOT741-1 B D A D1 ball A1 index area A A2 A1 E1 E detail X C e1 ∅v M C A B b 1/2 e e AB AA Y W V U T R P N M L K J H G F E

Contextual Info: Package outline BGA376: plastic ball grid array package; 376 balls; body 23 x 23 x 1.75 mm SOT741-1 B D A D1 ball A1 index area A A2 A1 E1 E detail X C e1 b 1/2 e e ∅v M C A B AB AA Y W V U T R P N M L K J H G F E D C B A y y1 C ∅w M C e e2 1/2 e 1 shape

23X23

Abstract: PBGA376 BGA376 PRBG0376FA-A
Contextual Info: JEITA Package Code P-BGA376-23x23-1.00 RENESAS Code PRBG0376FA-A Previous Code 376FHP MASS[Typ.] 2.1g φb A A φx M S AB e A1 ZD e B D y S Index mark Laser mark S ZE E AB AA Y W V U T R P N M L K J H G F E D C B A 1 2 3 4 5 6 7 8 9 10111213141516171819202122

Contextual Info: Package outline BGA376: plastic ball grid array package; 376 balls SOT1094-1 B D A D1 ball A1 index area E1 E A A2 A1 detail X C e1 e AF AD AB Y V T P M K H F D B 1/2 e ∅v ∅w b C A B C y y1 C AE AC AA e W U R e2 N L 1/2 e J G E C A 1 3 5 7 9 11 13 15 17 19 21 23 25

SF-BGA372B-B-11

Abstract: ST BGA
Contextual Info: D Package Code: BGA372B C 24.13mm [0.950"] Ø 0.40mm [Ø 0.0156"] tooling hole X2 optional See BGA pattern code to the right for actual pattern layout Y 24.13mm [0.950"] 1.27mm typ. [0.050"] X Top View (reference only) 0.64mm [0.025"] typ. 2 0.36mm [0.014"] dia.

SF-BGA372A-B-11

Contextual Info: D Package Code: BGA372A C 28.52mm [1.123"] 1.5mm [0.059"] See BGA pattern code to the right for actual pattern layout Y 28.52mm [1.123"] X Top View reference only 1.5mm [0.059"] 2 0.36mm [0.014"] dia. 5.33mm 3.74mm [0.147"] [0.210"] 1.5mm [0.059"] Ø 0.64mm pad [Ø 0.025"]

SAMSUNG MCP

Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
Contextual Info: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)

Contextual Info: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised

TAS5412

Abstract: TAS5422 audio guide TAS5707 300w stereo amplifier with bass and treble TAS3308 TLV320AIC34 TMS320C6747 purepath studio bass treble using ne5532
Contextual Info: Audio Guide Class-AB, Class-D and Class-G Amplifiers, Audio Converters, Clocks, Digital Signal Processing, Interface, Switches and USB Audio www.ti.com/audio 1Q 2009 2 Audio Guide ➔ Table of Contents Audio Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

pu2211

Abstract: 4835D SiS 961 tp51112 MITAC MPU mitac 8 PU516 SiS961 SERVICE MANUAL tv hyundai w220 foxconn
Contextual Info: SERVICE MANUAL FOR 8575A 8 5 7 5 A BY: Sissel Diao TESTING TESTING TECHNOLOGY TECHNOLOGY DEPARTMENT DEPARTMENT // TSSC TSSC Aug . 2002 8575A N/B Maintenance Contents 1. Hardware Engineering Specification …………………………………………………………………

SiS 961

Abstract: LA 1361 foxconn SIS 650 compal S1-A13 Compal Electronics 2N7002 MARK 702 100K-0402 BM 00603
Contextual Info: A B C D E 1 1 Compal Confidential 2 2 Schematics Document P4 uFCBGA/uFCPGA Northwood with SIS Core Logic 2001-5-30 3 3 REV:1.0A 4 4 Compal Electronics, Inc. Title THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS,INC. AND CONTAINS CONFIDENTIAL

R2A25416SP

Abstract: SH7777 Renesas SH72546 Renesas SH72543 SH72544 car ECU training sh72543 R5E72546RKBG SH 72546 Wiring Diagram of NIPPON car center lock system
Contextual Info: 2009.10 Renesas Automotive www.renesas.com Introduction 1 Introduction 1 Imagination to Realize. Renesas Automotive Automotive Semiconductor Devices for the Future of Car Electronics The wider use of electronics in motor vehicles brings new requirements for automotive semiconductor devices.

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

BA100 diode

Abstract: BA115 BA116 BA961 SAMSUNG MCP ba841 ba7 transistor BA124 BA127 BA133 diode
Contextual Info: KADxx0300B - Txxx MCP MEMORY Document Title Multi-Chip Package MEMORY 128M Bit Two Dual Bank 64M Bit NOR Flash Memory / 32M Bit (2Mx16) UtRAM Revision History Revision No. History Draft Date Remark August 9, 2002 Preliminary 0.0 Initial Draft 0.1 Revised (UtRAM)

BA107

Abstract: ba4901 ba741 BA115 ba901 BA5101 BA100 diode BA102 BA116 ba941
Contextual Info: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised

8 pin ic sdc 3733

Abstract: MITAC 8640 PU516 windows china tv kit STR power supply ps2 mouse diagram li-ion battery pack 14.8V RJ 49 CONNECTORS toshiba c850 PU515 SIEMENS BST h45 100
Contextual Info: SERVICE MANUAL FOR 8640 8640 BY: Dragon Jiang TESTING TESTING TECHNOLOGY TECHNOLOGY DEPARTMENT DEPARTMENT // TSSC TSSC Nov .2002 8640 N/B Maintenance Contents 1. Hardware Engineering Specification -1.1 Introduction -1.2 System Overview -1.3 System Hardware -1.4 Electrical Characteristic -

VT1611A

Abstract: power module hd 110M NAD-16A gld tv schematic diagram IC25N010ATDA040-0 HT14X13-102 QD141X1LH03 PCT303W LTN150P1-L03 pj77
Contextual Info: SERVICE MANUAL FOR 8500 BY: Sissel Diao TESTING TESTING TECHNOLOGY TECHNOLOGY DEPARTMENT DEPARTMENT // TSSC TSSC Aug . 2002 8500 N/B Maintenance Contents 1. Hardware Engineering Specification …………………………………………………………………

BA114

Abstract: BA107 samsung ba92 BA122
Contextual Info: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised

mitsumi dc motor r-14

Abstract: QD141X1LH03 south bridge SIS 968 samsung crt monitor 56v circuit diagram SDR-081 F3437 mitac 8 diode S4 68a resistor 56E R87 motherboard mPGA478 circuit
Contextual Info: SERVICE MANUAL FOR 8575 BY: Sissel Diao TESTING TESTING TECHNOLOGY TECHNOLOGY DEPARTMENT DEPARTMENT // TSSC TSSC Jun. 2002 8575 N/B Maintenance Contents 1. Hardware Engineering Specification …………………………………………………………………

BA961

Abstract: BA43 48FBGA samsung nor flash ba107
Contextual Info: K8D6x16UTM / K8D6x16UBM NOR FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1

SAMSUNG MCP

Abstract: KBB05A500 transistor BA29 BA102 NAND FLASH BGA transistor ba47 Pre-programming nand samsung UtRAM Density BA841 BGA-100
Contextual Info: KBB0xA500M - T402 MCP MEMORY Document Title Multi-Chip Package MEMORY 64M Bit 8Mx8/4Mx16 Dual Bank NOR Flash *2 / 128M Bit (8Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft October 15, 2002

SAMSUNG MCP

Abstract: samsung toggle mode NAND ba7810 BA102 NAND FLASH BGA UtRAM Density BA5101 BA340 BGA-60
Contextual Info: SEC Only MCP MEMORY KAB0xD100M - TxGP Document Title Multi-Chip Package MEMORY 64M Bit 8Mx8/4Mx16 Dual Bank NOR Flash / 128M Bit (8Mx16) NAND Flash / 32M Bit (2Mx16) UtRAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft March 20, 2002