SOT173 RF transistor
Contextual Info: Philips Semiconductors btiSB'lBl 0 0 31 4 ^ 3 S S I M A P X Preliminary specification NPN 9 GHz wideband transistor BFP505 N AMER P H ILIP S /D IS C R E TE FEATURES b'lE D PINNING • High power gain PIN • Low noise figure 1 collector • High transition frequency
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Contextual Info: bb-53^31 DD3EE15 T^7 Hi APX Philips Sem iconductors Product specification NPN 9 GHz wideband transistor X3A-BFR505 crystal N A PIER PHILIPS/DISCRETE b^E » DESCRIPTION MECHANICAL DATA NPN crystal used in BFR505 SOT23 , BFG505 (SOT143) and BFP505 (SOT173). Crystals are supplied
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bb-53dd3ee15x3a-bfr505bfr505+4bfg505ot143bfp505ot173
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sot173x
Abstract: BFP505
Contextual Info: Philips Semiconductors Preliminary specification NPN 9 GHz wideband transistor PHILIPS INTERNATIONAL FEATURES ¡"^7 ”^“ 3 SbE D • BFP505 711DflSb QDMS3flS AS? ■ P H I N PINNING • High power gain • Low noise figure DESCRIPTION PIN • High transition frequency
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ot173xbfp505711dflsbot173+2mbc360sot173x
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SOT173
Abstract: SOT-173 wideband transistor sot173 BFP505 NPN planar RF transistor 5 GHZ TRANSISTOR
Contextual Info: Philips Semiconductors Preliminary specification NPN 9 GHz wideband transistor PHILIPS INTERNATIONAL FEATURES BFP505 SbE D • 711DflSb QDMS3flS AS? ■ P H I N PINNING • High power gain PIN • Low noise figure 1 DESCRIPTION O’ collector • High transition frequency
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bfp505ot173xot173004s3+5sot173sot-173wideband transistor sot173npn planar rf transistor5 ghz transistor
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SOT-173
Abstract: sot173 BFP96 BFQ32C
Contextual Info: 55 RF/Microwave Devices RF W ideband Transistors cont. Type No. BFG198 BFG505 BFG505/X BFG505/XR BFG520 BFG520/X BFG520/XR BFG540 BFG540/X BFG540/XR BFG541 BFG590 BFG590/X BFG590/XR BFG591 BFG621 BFG741 BFP90A BFP91A BFP96 BFP505 BFP520 BFP540 BFQ17 BFQ18A
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bfg198bfg505bfg505/xbfg505/xr+10bfg520bfg520/xbfg520/xrbfg540bfg540/xbfg540/xrsot-173sot173bfp96bfq32c
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SOT173
Abstract: BFP505 SOT-173
Contextual Info: Philips Semiconductors bbSB^Bl 00314*13 ^BAPX SSI Preliminary specification NPN 9 GHz wideband transistor BFP505 N AUER PHILIPS/DISCRETE FEATURES • • bTE D PINNING High power gain Low noise figure PIN 1 • • High transition frequency Gold metallization ensures
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bfp505ot173xot173ot173ctor-base+2sot173sot-173
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SOT173
Abstract: BFG505 BFP505 BFR505 X3A-BFR505 crystal PHILIPS
Contextual Info: P h ilip s S em icon du ctors P rodu ct specification 1^3 1 - 9 0 NPN 9 GHz wideband transistor crystal PHILIPS SbE INTERNATIONAL » D ESCRIPTION X3A-BFR505 711002b I 0D4bl05 32^ • P H I N M E C H A N IC A L DATA NPN crystal used in BFR505 SOT23 , BFG505
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bfr505bfg505ot143bfp505+5ot173x3a-bfr505rv-3-5-52/733sot173crystal philips
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fr91a
Abstract: philips bfq FQ235a t122 25 3 FQ262a fr90a 122e BFR134 t122 25 10 t122 25 72
Contextual Info: 22 Small Signal Leaded Devices Wideband Transistors cont. h FE R a tin g s Type P ackage v CEO V S O T -103 S O T -103 S O T -103 S O T -103 S O T -173 S O T -173 S O T -173 S O T -173 S O T -173 S O T -173 TO -72 S O T -173 S O T -122 S O T-37 TO -72 TO -72
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bfg96bfp96bfp505bfp520+16bfp540bfq33cbfq63bfq65bfq66bfq161fr91aphilips bfqfq235at122 25 3fq262afr90a122ebfr134t122 25 10t122 25 72
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bf0262a
Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
Contextual Info: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A
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1n8211n821a1n8231n823a+161n8251n825a1n8271n827a1n8291n829abf0262abf0262om3351n5821idom336om2061om926buk645om2060bly94
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BF547A
Abstract: transistor bf 175 BFG65 equivalent BF547B BFG25AXD
Contextual Info: Philips Sem iconductors RF Wideband Transistors The New Generation Contents page PREFACE 3 SELECTION GUIDE 6 S-PARAMETERS 22 SPICE AND PACKAGE PARAMETERS 44 THERMAL CHARACTERISTICS 48 DEVICE DATA in alpha-num eric sequence 54 OUTLINES 442 INDEX 448 DEFINITIONS
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lcd01bf547atransistor bf 175bfg65 equivalent+2bf547bbfg25axd
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BFT92A
Abstract: BFT93A BFG134 bf689 sot37 sot173 BFG34 BFQ52 bfg65 sot143 philips bfw92
Contextual Info: 52 RF/Microwave Devices First Generation RF W ideband Transistors fT to 3.5 GHz metal can fr/ lc Curve Polarity (1) (2) N PN NPN (3) (4) (5) NPN NPN NPN (6) (18) NPN NPN TO-39 surface mount plastic TO-72 TQ-92 BFY90 BF689K BF763 BFW30 SOt-37 ceramic SOT-122E
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bfy90tq-92bf689kbf763+16sot-37bft24bfw92bfw93ot-122eot-23bft92abft93abfg134bf689sot37sot173bfg34bfq52bfg65 sot143philips bfw92
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BFG591 amplifier
Abstract: SC08a bfr591 sot173x BB544 sot122 sot172 bfg65 sot143 SIEMENS BFP520 macro-X ceramic
Contextual Info: Philips Semiconductors Semiconductors for Telecom systems Selection List General For further information, refer to Data Handbook S C 1 4,1993; "RF Wideband Transistors", except otherwise specified. RF wideband transisto rs March 1993 14 Philips Semiconductors
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ot122ot143ot223ot323+16bfs17wbfg17abfg16abf547wbf747wbft25bfg591 amplifiersc08abfr591sot173xbb544sot122sot172bfg65 sot143siemens bfp520macro-x ceramic
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SOT173
Abstract: BFG505 BFP505 BFR505 X3A-BFR505
Contextual Info: IAPX bb53T31 DD3SS1S W P h ilip s S e m icon d u ctors P ro d u ct sp ecificatio n NPN 9 GHz wideband transistor X3A-BFR505 crystal — -^ 1^— N A M ER P H I L I P S / D I S C R E T E hlE ]> D ESCRIPTIO N M E C H A N IC A L DATA N PN crystal used in BFR505 SOT23 , BFG505
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bb53t31x3a-bfr505bfr505bfg505+5ot143bfp505ot173urv-3-5-52/733sot173
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