BFG621 Search Results

philips MATV amplifiers

Abstract: CIL TRANSISTOR BFG621 PH* SOT223 transistor
Contextual Info: Philips Semiconductors 1^53^31 00314b7 IbT M APX Objective specification NPN 8 GHz wideband transistor BFG621 N AMER PHILIPS/DISCRETE FEATURES b'îE ]>' PINNING PIN • Low distortion DESCRIPTION • Gold metallization ensures excellent reliability 1 emitter

philips MATV amplifiers

Abstract: BFG621 35KW TRANSISTOR FQ PH* SOT223 transistor
Contextual Info: O bjective specification Philips Sem iconductors v NPN 8 GHz wideband transistor PHILIPS international FEATURES SbE J> PINNING PIN ' 3 3 0 ? 3 ~~ BFG621 711005b 0 0 llS3Sb 7bS • P H I N DESCRIPTION • Low distortion • Gold metallization ensures excellent reliability

NPN planar RF transistor

Abstract: NPN RF Amplifier BFG621 transistor 513 PH* SOT223 transistor RF NPN POWER TRANSISTOR 2.5 GHZ
Contextual Info: O b je c tiv e s p e c ific a tio n P h ilip s S e m ic o n d u c to rs NPN 8 GHz wideband transistor PHILIPS i n t e r n a t i o n a l FEATURES BFG621 SbE ]> 711002b 004S35b 7b5 P IN N IN G PIN D E S C R IP T IO N • Low distortion • Gold m etallization ensures

SOT-173

Abstract: sot173 BFP96 BFQ32C
Contextual Info: 55 RF/Microwave Devices RF W ideband Transistors cont. Type No. BFG198 BFG505 BFG505/X BFG505/XR BFG520 BFG520/X BFG520/XR BFG540 BFG540/X BFG540/XR BFG541 BFG590 BFG590/X BFG590/XR BFG591 BFG621 BFG741 BFP90A BFP91A BFP96 BFP505 BFP520 BFP540 BFQ17 BFQ18A

Contextual Info: Philips Semiconductors ^ 53^31 00314b7 IbT APX Objective specification NPN 8 GHz wideband transistor BFG621 N Af1ER PHILIPS/DISCRETE FEATURES b^E ] PINNING PIN DESCRIPTION • Low distortion • Gold metallization ensures excellent reliability 1 emitter 2

bf0262a

Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
Contextual Info: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A

BF547A

Abstract: transistor bf 175 BFG65 equivalent BF547B BFG25AXD
Contextual Info: Philips Sem iconductors RF Wideband Transistors The New Generation Contents page PREFACE 3 SELECTION GUIDE 6 S-PARAMETERS 22 SPICE AND PACKAGE PARAMETERS 44 THERMAL CHARACTERISTICS 48 DEVICE DATA in alpha-num eric sequence 54 OUTLINES 442 INDEX 448 DEFINITIONS

BFT92A

Abstract: BFT93A BFG134 bf689 sot37 sot173 BFG34 BFQ52 bfg65 sot143 philips bfw92
Contextual Info: 52 RF/Microwave Devices First Generation RF W ideband Transistors fT to 3.5 GHz metal can fr/ lc Curve Polarity (1) (2) N PN NPN (3) (4) (5) NPN NPN NPN (6) (18) NPN NPN TO-39 surface mount plastic TO-72 TQ-92 BFY90 BF689K BF763 BFW30 SOt-37 ceramic SOT-122E

SOT-143R

Abstract: sot-143 rl SOT143R sot143 RA
Contextual Info: 99 Surface Mount Devices Wideband Transistors cont. f (MHz) P ino u t See S e ctio n VII 12 12 2000 2000 X AB — 2000 2000 2000 800 12 10.9 10.9 10.9 17.5 800 2000 2000 2000 800 S Q X AB Q 2.4 2.4 2.3 2.3 2.3 800 800 800 800 800 17.5 17.5 17 17 17 800 800

BFG591 amplifier

Abstract: SC08a bfr591 sot173x BB544 sot122 sot172 bfg65 sot143 SIEMENS BFP520 macro-X ceramic
Contextual Info: Philips Semiconductors Semiconductors for Telecom systems Selection List General For further information, refer to Data Handbook S C 1 4,1993; "RF Wideband Transistors", except otherwise specified. RF wideband transisto rs March 1993 14 Philips Semiconductors

BFG520

Abstract: BFQ67 Philips RF PREAMP cordless phone circuit BFG591 blt81 BFR93AW BFR93A sot103 phone circuit
Contextual Info: RF/Microwave Devices RF Wideband Transistors RF Wideband Transistors for Pagers RF amp see Fig. 1 SOT323 SOT23 SOT143 BFR92AW BFS25A BFS505 BFS520 BFR92A BFT25A BFR505 BFR520 BFG92A/X BFG25A/X BFG505/X BFG520/X MIX see RF amp O SC see RF amp ante nna \ /