BDB01A
Abstract: BDB01B BDB01C BDB01D
Contextual Info: MOTOROLA Order this document by BDB01C/D SEMICONDUCTOR TECHNICAL DATA One Watt Amplifier Transistors BDB01C,D NPN Silicon COLLECTOR 3 2 BASE 1 1 EMITTER 2 3 CASE 29–05, STYLE 1 TO–92 TO–226AE MAXIMUM RATINGS Rating Symbol BDB01C BDB01D Unit Collector – Emitter Voltage
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B01D
Contextual Info: BDBOIC'D MAXIMUM RATINGS Symbol BDB01C BDB01D Collector-Emitter V oltage v CEO 80 100 V dc Collector-Base V oltage VCES 80 100 Vdc Rating Em itter-Base Voltage Unit v EBO 5.0 Collector Current — C o n tin u o u s 'C 0.5 Ade Total Device Dissip ation PD 1.0
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MSC2404
Abstract: MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP RF Amplifier Transistor Surface Mount MSA1022-CT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage VCBO – 30 Vdc Collector–Emitter Voltage
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msa1022-ct1emitte218amsc1621t1msc2404+15msd1819amv1620mv1624mv1636mv1640mv1642mpf3821bc237mps8093bcy72mmbf4856mad130pmps3866bcy71 alternativebss72
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BF245
Abstract: BC237 MSC2404 mps8093 bf244 MSA1022 MSC2295-BT1 msc2295 MAD1107P MPS6568
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN RF Amplifier Transistors Surface Mount COLLECTOR 3 MSC2295-BT1 MSC2295-CT1 Motorola Preferred Devices 3 2 BASE 1 EMITTER 2 1 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 30
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msc2295-bt1msc2295-ct1msc1621t1msc2404+14msd1819amv1620mv1624mv1636mv1640mv1642bf245bc237mps8093bf244msa1022msc2295mad1107pmps6568
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triac zd 607
Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.
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sg73/dtriac zd 6071n5204ca2820 trw+72n4427 equivalent bfr912n6823842 317 so8bd243 pinoutbd529bf506bf845
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stencil
Abstract: BC237 automatic heat detector project report BC393 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Schottky Barrier Diode BAT54T1 These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and
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bat54t1ju218amsc1621t1msc2404+10msd1819amv1620mv1624mv1636mv1640mv1642stencilbc237automatic heat detector project reportbc393 equivalent
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BC237
Abstract: level shifter 2N5401 2771 040 0002 MUN5214T1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN5211T1 SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device
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sc-70/sot-323spa218amsc1621t1msc2404+10msd1819amv1620mv1624mv1636mv1640mv1642bc237level shifter 2n54012771 040 0002mun5214t1
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bs170 replacement
Abstract: BC237 BC30 transistor K 2056
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Switching BS170 N–Channel — Enhancement 1 DRAIN 2 GATE 3 SOURCE MAXIMUM RATINGS 1 Rating Drain – Source Voltage Gate–Source Voltage — Continuous — Non–repetitive tp ≤ 50 µs Drain Current(1)
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bs170226aads218amsc1621t1+10msc2404msd1819amv1620mv1624mv1636mv1640bs170 replacementbc237bc30transistor k 2056
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transistor bc237 bc337
Abstract: replacement transistor BC337 bc337 TRANSISTOR equivalent bc338 equivalent BC337 TO-92 Generic BC337 circuit example BC160-16 BC337-25 "pin compatible" BC237 BC338 REPLACEMENT
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors NPN Silicon BC337,-16,-25,-40 BC338,-16,-25,-40 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC337 BC338 Unit Collector – Emitter Voltage VCEO 45 25 Vdc Collector – Base Voltage
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bc337bc338226aajunction218a+14msc1621t1msc2404msd1819amv1620transistor bc237 bc337replacement transistor bc337bc337 transistor equivalentbc338 equivalentbc337 to-92 genericbc337 circuit examplebc160-16bc337-25 "pin compatiblebc237bc338 replacement
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BC237
Abstract: MPS-A70 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor MPSA70 PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 CASE 29–04, STYLE 1 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO –40 Vdc Emitter – Base Voltage
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mpsa70226aacharacteri218amsc1621t1+8msc2404msd1819amv1620mv1624mv1636mv1640bc237mps-a70 equivalent
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bc182 equivalent 2n2907
Abstract: bc183 equivalent BC237 BC182 bc184 BF245 bc184 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC182,A,B NPN Silicon BC183 BC184 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC182 BC183 BC184 Unit Collector – Emitter Voltage VCEO 50 30 30 Vdc Collector – Base Voltage VCBO
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bc182bc183bc184226aa+8junction218amsc1621t1msc2404bc182 equivalent 2n2907bc183 equivalentbc237bf245bc184 equivalent
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transistor MPS5771
Abstract: BC237 bfw4
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High-Speed Switching Diode MMBD914LT1 Motorola Preferred Device 3 CATHODE 1 ANODE 3 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 100 Vdc Forward Current IF 200 mAdc IFM surge 500 mAdc Symbol Max Unit
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P2d MARKING CODE
Abstract: H2A transistor ev 2816 BC237 transistor 2N2906
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor PZTA92T1 PNP Silicon COLLECTOR 2,4 BASE 1 EMITTER 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO – 300 Vdc Collector–Base Voltage VCBO –300 Vdc Emitter–Base Voltage
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pzta92t1261aaelectri218amsc1621t1+11msc2404msd1819amv1620mv1624mv1636mv1640p2d marking codeh2a transistorev 2816bc237transistor 2n2906
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WT transistor
Abstract: BC237 S11S 2n441 BF244B 2N3799 JFET BF245 C4 SOT-323 2N3819 MOTOROLA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Transistor N–Channel 2 SOURCE MMBF5484LT1 Motorola Preferred Device 3 GATE 1 DRAIN 3 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Forward Gate Current 1 Symbol Value Unit VDG 25 Vdc
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mmbf5484lt1236abc218amsc1621t1+15msc2404msd1819amv1620mv1624mv1636mv1640wt transistorbc237s11s2n441bf244b2n3799jfet bf245c4 sot-3232n3819 motorola
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BC237
Abstract: jedec package TO-226AA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Series Switching Diode BAV99LT1 ANODE 1 Motorola Preferred Device CATHODE 2 3 CATHODE/ANODE 3 1 2 CASE 318 – 08, STYLE 11 SOT– 23 TO – 236AB MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage
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2n1613 equivalent
Abstract: BC237 diode l 0607
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BAV99WT1 BAV99RWT1 SC-70/SOT-323 Dual Series Switching Diode Motorola Preferred Devices The BAV99WT1 is a smaller package, equivalent to the BAV99LT1. Suggested Applications • ESD Protection • Polarity Reversal Protection
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bc373 equivalent
Abstract: BC372 equivalent BC237 JC 201 SC
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Darlington Transistors BC372 BC373 NPN Silicon COLLECTOR 3 BASE 2 1 2 EMITTER 1 3 CASE 29–04, STYLE 1 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol BC372 BC373 Unit Collector – Emitter Voltage VCES
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2N5458
Abstract: BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC–59 package which is designed for low power surface mount applications.
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2N16
Abstract: BC237 BCY72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF1P02ELT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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BC237
Abstract: MARKING CODE diode sod123 W1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBD54DWT1 Preliminary Information Dual Schottky Barrier Diodes Motorola Preferred Device These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces
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mbd54dwt1reve218amsc1621t1msc2404+8msd1819amv1620mv1624mv1636mv1640mv1642bc237marking code diode sod123 w1
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bc327 replacement
Abstract: equivalent components for transistor bc328 BC237 bf391 t Motorola MVAM125 bc327 equivalent SOT23 BC327-25
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors PNP Silicon BC327,-16,-25 BC328,-16,-25 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC327 BC328 Unit Collector – Emitter Voltage VCEO –45 –25 Vdc Collector – Base Voltage
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bc327bc328226aat218a+11msc1621t1msc2404msd1819amv1620bc327 replacementequivalent components for transistor bc328bc237bf391 tmotorola mvam125bc327 equivalent sot23bc327-25
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Transistor BC107 motorola
Abstract: transistor motorola 2n3053 transistor BF245 BC237 2N2369 transistor pulse generator Gate Driver SOT-363 Marking Code G Transistor BC107b motorola
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Core Driver Transistor MPQ3725 NPN Silicon 14 13 12 11 10 9 8 5 6 7 Motorola Preferred Device NPN 1 2 3 4 MAXIMUM RATINGS 14 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 40 Vdc Collector – Emitter Voltage
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mpq3725tran218amsc1621t1msc2404+13msd1819amv1620mv1624mv1636mv1640mv1642transistor bc107 motorolatransistor motorola 2n3053transistor bf245bc2372n2369 transistor pulse generatorgate driver sot-363 marking code gtransistor bc107b motorola
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BC237
Abstract: BC109C
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Amplifier Switching Transistor MPQ3904 NPN Silicon Motorola Preferred Device 14 13 12 11 10 9 8 5 6 7 NPN 1 2 3 4 MAXIMUM RATINGS 14 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 40 Vdc Collector – Base Voltage
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transistor motorola 2n3053
Abstract: Transistor BC107 motorola transistor equivalent 2n5551 symbol transistor BC108 transistor equivalent book 2N5401 BC107 Transistor application notes 2N2904 transistor TO92 Transistor BC107b motorola MOTOROLA 2n2102 TRANSISTOR TRANSISTOR BC107B die
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low Noise Transistor MPSA18 NPN Silicon Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 45 Vdc Collector – Base Voltage VCBO 45
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mpsa18226aarqja218amsc1621t1+16msc2404msd1819amv1620mv1624mv1636mv1640transistor motorola 2n3053transistor bc107 motorolatransistor equivalent 2n5551symbol transistor bc108transistor equivalent book 2n5401bc107 transistor application notes2n2904 transistor to92transistor bc107b motorolamotorola 2n2102 transistortransistor bc107b die
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