BCW61A Search Results

Contextual Info: BCW61A BCW61B BCW61C BCW61D IL SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P silicon transistors Marking BCW61A = BA BCW61B = BB BCW61C = BC BCW61D = BD PACKAGE OUTLIN E DETAILS A LL DIM EN SION S IN mm 3.0 2.8 0.14 0.48 0.38 3 2.6 2A Pin configuration 1 = BASE

Diodes Marking K6

Abstract: BCX17 Diodes Marking K7 MARKING U1 marking A06 MARKING C4 Marking H2 S4 2A S5 MARKING BCV72
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW61A BCW61B BCW61C BCW61D BCW65A BCW65B BCW65C

BCW61A

Abstract: BCW61B BCW61C BCW61D 072d
Contextual Info: BCW61A BCW61B BCW61C BCW61D SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P silicon transistors M arking BCW61A = BA BCW61B = BB BCW61C = BC BCW61D = BD PA C KA G E O U TLIN E D ETA ILS A LL D IM EN SIO N S IN m m 3 .0 0 .1 4 Pin configuration 1 = BASE 2 = EMITTER

bc856b

Abstract: IC 8002
Contextual Info: SURFACE MOUNT CATALOGUE SOT 23 CERAMIC LCC PNP GENERAL PURPOSE PNP RATINGS DEVICE BC807-16 BC807-25 BC807-40 BC808-16 BC808-25 BC808-40 BC856A BC856B BC857A BC857B BC857C BC858A BC858B BC858C BCW29 BCW30 BCW61A BCW61B BCW61C BCW61D hFE VCE SAT fT VCEO IC

Diodes Marking K7

Abstract: Diodes Marking K6 sot23 marking m8 transistors marking 1p BSS69 marking 1p sot23 Marking b4 SOT23 MARKING l7 MARKING K4 marking H6 sot 23
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LISTA N O DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW61A BCW61B BCW61C BCW61D BCW65A BCW65B

transistor smd marking BA

Contextual Info: Transistors IC SMD Type Product specification BCW61A/B/C/D Features SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 PNP Epitaxial Silicon Transistor 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01

42t sot-23

Abstract: BCX716 BCD Schalter TFK BB transistor BC 458 BCX 458 TFK AF tfk s 154 p am/M29F002BB(45/55/70/90/TC5117800ANJ/BCX716 tfk 715
Contextual Info: l Ü F Gestempeltmit: BCW61ABCW61B BCW61C BCW61D BCX716 BCX71H BCX71J BCX71K Q O lli C l M a rk e d w ith : B» BB IC BD BO BH BJ BK D uW U l DPV11 * B l» A / I Silizium-PNP-Epitaxial-Planar-NF-Transistor Silicon PNP Epitaxial Planar AF Transistor Anwendungen: Vorstufen und Schalter in Dick- und Dünnfilmschaltungen

transistor smd marking BA

Abstract: transistor smd marking bb transistor BC 550 transistor smd marking BA sot-23 transistor smd marking BC BCW61B bc transistor icbo nA MARKING SMD PNP TRANSISTOR transistor smd ba rs TRANSISTOR BC 550 b
Contextual Info: Transistors IC SMD Type General Purpose Transistor BCW61A/B/C/D Features SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 PNP Epitaxial Silicon Transistor 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW61A BCW61B BCW61C BCW61D SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking BCW61A = BA BCW61B = BB BCW61C = BC

transistor mark BA

Contextual Info: BCW61A/B/C/D PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature Symbol

FMMT2222A

Abstract: FMMT-A06 BCV71 BCV72 BCW29 BCW30 BCW31 BCW32 BCW33 BFQ31
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LISTANO DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW61A BCW61B BCW61C BCW61D BCW65A BCW65B BCW65C

BCW60A

Abstract: BCW60D BCW61A BCW61B BCW61C BCW61D
Contextual Info: BCW61A . BCW61D BCW61A . BCW61D Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage PNP PNP Version 2006-07-31 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse

F1K marking

Contextual Info: BCW61A/B/C/D PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Col lector-Base Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollector C urrent C ollector D issipation Storage Tem perature

25CC

Abstract: BCW61A BCW61B BCW61C BCW61D
Contextual Info: BCW61A BCW61B BCW61C BCW61D CDIL SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P silicon transistors M ark in g BCW61A = BA BCW61B = BB BCW61C = BC BCW61D = BD P A C K A G E O U T L IN E D ETA ILS A L L D IM E N S IO N S IN m m 3.0_ 2.8 0.14 0.48 0.38 3 2.6 2.4

BCW61A

Abstract: BCW61B BCW61C BCW61D BCw6
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW61A BCW61B BCW61C BCW61D SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking BCW61A = BA BCW61B = BB BCW61C = BC

Contextual Info: » Discrete POWER & Sig n a l Technologies National S e m i c o n d u c t o r " ' _ V Device No. SOT-23 Mark C ase Style CES V * v v CEO CBO (V) M in „ _ _ _ , Pro E lectro n S u rfa c e M o u n t B ip o la r D ev ic es 1 / 1 CES v y ebo * 1 CBO (V) Min

bc5478

Abstract: 2n2222a SOT23 BC557 smd sot23 2n2222 sot23 BC547 smd BC547 2N2222 2n3906 sot23 2N2222 SMD SOT23 2n2907 smd 2n4401 smd
Contextual Info: SMD w COMPONENT i w i h www.microelectronoc.co.yu i i S M D S E M IC O N D U C T O R S ON M A R K IN G ^ ^ ^ e l e c t r B n ic microe@ptt.yu M A R K IN G T Y PE N U M B E R PACKAGE C O N V E R C IN A L TY PE M A R K IN G T Y PE N U M B E R PACKAGE C O N V E R C IN A L

CS9013

Abstract: CS9011 CS9012 BC327 SOT 23-6 CS8050 BC547 CS9018 BF494 to-92 .y1 do-213ac
Contextual Info: Discrete POWER & Signal Technologies Pro Electron Diode Series Leaded Switching Diodes Device No. Vrrm I rrm V Min (nA) Min BAV19 BAV20 BAV21 BAV102 BAV103 100 150 200 150 200 100 100 100 100 100 BAW62 BAW76 BAX13 BAX16 BAY19 75 50 50 150 100 BAY71 BAY72

1N 2907A

Abstract: BSS65 A12 marking marking H6 sot 23 FMMT2222 PNP 2907a SOT23 FMMT2907A marking FMMT2907A 2907a BCV72
Contextual Info: I FERRANTI FMMT2907 FMMT2907A X 11sem iconductors m P N P S ilico n Planar G eneral P urpose S w itc h in g Transistors DESCRIPTION These devices are intended fo r use in small and medium signal am plification applications from d.c. to radio frequencies. Com plem entary to th e F M M T 2222 series

2N1077

Abstract: A472 G 2N1076 CI2923 2N1074 CK420 2sc196 2sc191 2N1075 2sc113
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

2SA614

Abstract: 2SA616 2sc113 STC5204
Contextual Info: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

BCX71RG

Abstract: BCW61RB bcw61rd
Contextual Info: T T T SEMI CON DUC TOR S 67 87D DE§ 4tainss DQ02353 1 r 02323 D PNP TRANSISTORS PNP Silicon Transistors Plastic Package TO-236 Marking Code - ~VcEO hpE Volts “ VcEsat at at - V C e/ - I c —Ic/—Ib - I ces at fr “ V ce Cob at -V c e /~I c CD Type

BCW31

Abstract: BCW31R BCW32R BCW33R BCV72 BCW32 BCW33 BFQ31 BFQ31A ferranti
Contextual Info: I BCW31 BCW32 BCW33 FERRANTI T IIsemiconductorsL NPN S ilic o n Planar Sm all S ignal Transistors D ESC R IP TIO N These devices are intended fo r use in low level, general purpose applications. Encapsulated in the popular SO T-23 package these devices are designed specifically fo r use in thin and th ick Film

FMMT3906

Abstract: SOT213 FMMT3905 ferranti BFQ31 FMMT3903 FMMT3904 PNP 3906 SOT23 T3905 BCW2
Contextual Info: FERRANTI semiconductors FMMT3905 FMMT3906 PNP Silicon Planar General Purpose Switching Transistors D E S C R IP T IO N These d e vice s are intended fo r use in sm all and m edium sign a l a m p lifica tio n a p p lica tio n s fro m d.c. to radio frequencies.