BCR129 |
|
Infineon Technologies
|
NPN Silicon Digital Transistor |
|
Original |
PDF
|
BCR129 |
|
Infineon Technologies
|
Single Ic = 100 mA; Package: PG-SOT23-3; Polarity: NPN; R1 (typ): 10.0 kOhm; R2: 0.0 k?; hFE (min): 120.0; Vi (on) (min): 0.5 2mA / 0.3V; |
|
Original |
PDF
|
BCR129 |
|
Siemens
|
NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) |
|
Original |
PDF
|
BCR129E6327 |
|
Infineon Technologies
|
Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 200MW SOT23-3 |
|
Original |
PDF
|
BCR129E6327HTSA1 |
|
Infineon Technologies
|
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS NPN 200MW SOT23-3 |
|
Original |
PDF
|
BCR129F |
|
Infineon Technologies
|
NPN Silicon Digital Transistor |
|
Original |
PDF
|
BCR129FE6327 |
|
Infineon Technologies
|
Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 250MW TSFP-3 |
|
Original |
PDF
|
BCR129FE6327 |
|
Infineon Technologies
|
Digital Transistors - R1= 10 kOhm |
|
Original |
PDF
|
BCR 129F E6327 |
|
Infineon Technologies
|
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS NPN 250MW TSFP-3 |
|
Original |
PDF
|
BCR129L3 |
|
Infineon Technologies
|
NPN Silicon Digital Transistor |
|
Original |
PDF
|
BCR129L3E6327 |
|
Infineon Technologies
|
Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 250MW TSLP-3 |
|
Original |
PDF
|
BCR129L3E6327 |
|
Infineon Technologies
|
Digital Transistors - R1= 10 kOhm |
|
Original |
PDF
|
BCR 129L3 E6327 |
|
Infineon Technologies
|
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS NPN 250MW TSLP-3 |
|
Original |
PDF
|
BCR129S |
|
Infineon Technologies
|
NPN Silicon Digital Transistor Array |
|
Original |
PDF
|
|
BCR129S |
|
Infineon Technologies
|
SOT363 ICmax = 100mA |
|
Original |
PDF
|
BCR129S |
|
Infineon Technologies
|
Dual Ic = 100 mA; Package: PG-SOT363-6; Polarity: NPN; R1 (typ): 10.0 kOhm; R2: 0.0 k?; hFE (min): 120.0; Vi (on) (min): 0.5 2mA / 0.3V; |
|
Original |
PDF
|
BCR129S |
|
Siemens
|
NPN Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit) |
|
Original |
PDF
|
BCR129SE6327 |
|
Infineon Technologies
|
Transistors (BJT) - Arrays, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS DUAL NPN SOT363 |
|
Original |
PDF
|
BCR129SE6327HTSA1 |
|
Infineon Technologies
|
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased - TRANS 2NPN PREBIAS 0.25W SOT363 |
|
Original |
PDF
|
BCR129SH6327 |
|
Infineon Technologies
|
Transistors (BJT) - Arrays, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS DUAL NPN SOT363 |
|
Original |
PDF
|