AM27S41 Search Results

Contextual Info: Am27S41/27PS41 Am27S41/27PS41 16,384-Bit 4,096x4 Bipolar PROM DISTINCTIVE CHARACTERISTICS • AC performance is factory tested utilizing programmed test words and columns • Voltage and temperature compensated providing ex­ tremely flat AC performance over military range

Contextual Info: a Am27S41 /27S41A/27PS41 Advanced Micro Devices 16,384-Bit 4,096x4 Bipolar PROM DISTINCTIVE CHARACTERISTICS Ultra-last access time " A " version (35 ns Max.) Platinum-Silicide fuses guarantee high reliability, fast program m ing and exceptionally high programming

27s41

Abstract: AM27S41 27S41A AMD Bipolar PROM programming AM27S41A 27ps41
Contextual Info: a AduÄ Am27S41 /27S41A/27PS41 16,384-Bit 4,096x4 Bipolar PROM Devices DISTINCTIVE CHARACTERISTICS Voltage and temperature compensated providing ex­ tremely fla t AC performance over military range Member o f generic PROM series utilizing standard programming algorithm

27s41

Abstract: Bipolar PROM programming 27PS41 Am27S41/27PS41
Contextual Info: Am27S41/27PS41 16,384-Bit 4 ,0 9 6 x 4 Bipolar PROM > 3 DISTINCTIVE CHARACTERISTICS Ultra-fast access time " A " version (35 ns Max.) — Fast access time Standard version (50 ns Max.) — allow Platinum-Silicide fuses guarantee high reliability, fast programming and exceptionally high programming

Contextual Info: Am27S41/27PS41 Am27S41/27PS41 16,384-Bit 4 ,0 9 6 x 4 Bipolar PROM DISTINCTIVE CHARACTERISTICS • • • Ultra-fast access time "A " version (35 ns Max.) — Fast access time Standard version (50 ns Max.) — allow Platinum-Silicide fuses guarantee high reliability, fast

27s41a

Contextual Info: a Adva£ Am27S41 /27S41A/27PS41 16,384-Bit 4,096x4 Bipolar PROM Devices DISTINCTIVE CHARACTERISTICS Voltage and temperature compensated providing ex­ tremely flat AC performance over military range Member of generic PROM series utilizing standard programming algorithm

29MA16

Abstract: am27s47a AM27S45a AM27S45s Am27S85 Am27LS291 AM27S85A CD3024 PD3024
Contextual Info: A m P A L * H C 2 9 M A 16 /A m P A L H C T 2 9 M A 16 24-Pin E2-Based CMOS Programmable Array Logic ADVANCE INFORMATION • • • • H igh-perform ance sem i-custom logic replacem ent; E lectrically Erasable E2 technology allows repro­ gram mability

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

27S55A

Contextual Info: AmPAL* HC29MA16/AmPALHCT29MA16 24-Pin E2-Based C M O S Programmable Array Logic A D VA N C E INFORMATION • Register/Latch PR E L O A D permits full logical verifica­ tion • Available in high-speed tpo “ 35 ns, fMAX = 20 MHz and standard-speed (tpo ” 45 ns, fMAX “ 15.0 MHz)

6301-1 prom

Abstract: 3622 prom mmi 3601 PROM 3601 intel 3601 PROM PROM intel 3601 9344C N82S141 74S189 N82S137
Contextual Info: BIPOLAR MEMORY DIVISION MAY 1982 8192-BIT BIPOLAR PROM 1024 x 8 82HS181 /82HS181A (T.S.) DESCRIPTION FEATURES The 82HS181 is fie ld p rog ra m m a b le , w h ich m eans th a t cu s to m p a tte rn s are im ­ m e d ia te ly a va ila b le by fo llo w in g th e fu s in g

N82S191

Abstract: 6301-1 prom 82S191 SIGNETICS prom 6331-1 PROM intel 3601 SIGNETICS prom n82s141 74S200 HM76161-5 93427C
Contextual Info: MAY 1982 BIPOLAR MEMORY DIVISION 16,384-BIT BIPOLAR PROM 2048 X 8 DESCRIPTION The 82S191 Is field programmable, which means that custom patterns are Immediate­ ly available by following the fusing proce­ dure given in this data manual. The 82S191 is supplied with all outputs at a logical low.

AM25LS2521PC

Abstract: ADV478KP50E AM27S19/BEA bra 94 4753 AM27S27DC AM27S13A am2902apc AM26LS31/BEA AM25LS2521PCB
Contextual Info: • M fr 7A0034S 000D342 & 3 S m Qty/Note Part Number M fr Qly/Note Part Number M fr ANA 1842 AM25S09DC AMD 1955 AW27S19SA«£A AMD ANA 6655 AM25S09PC AMD 153 AM27S19SA/BFA AMD 88 ANA 520 AM25S10DC AMD 310 AM27S2W FA AMD 5540 304 ANA 405 AM2614FM AMD 8 AM27S21A/B2A

N82S141

Abstract: 93427c 6331-1 N82S137 mmi 6301-1 74S200 N82S129 74S206 MMI 6341-1 AM27S29C
Contextual Info: MAY 1982 BIPOLAR MEMORY DIVISION 8 1 92-BIT BIPOLAR PROM 2 0 4 8 x 4 _ 82HS485/82HS185A (T.S.) DESCRIPTION FEATURES The 82HS185 is fie ld program m able, vihich means th a t cu sto m patte rn s are im m ed iate ­ ly available by fo llo w in g th e fu sin g p roce ­

AM27S45s

Contextual Info: AmPAL*HC29MA16/AmPALHCT29MA16 24-Pin E2-Based CMOS Programmable Array Logic ADVANCE INFORMATION > 3 DISTINCTIVE CHARACTERISTICS High-performance semi-custom logic replacement; Electrically Erasable E2 technology allows repro­ gram mability 16 bidirectional user-programmable I/O logic macro­

AMD Bipolar PROM programming

Abstract: Kontron MPP80S AM27S20 Bipolar PROM programming kontron mpp Am27S180 tv schematic diagram company SHARP MPP80S DARLINGTON TRANSISTOR ARRAY generic prom programming
Contextual Info: Bipolar Generic PROM Series a Advanced Micro Devices R E L IA B IL IT Y R E P O R T R E L IA B IL IT Y R E P O R T R E L IA B IL IT Y R E P O R T R E L IA B IL IT Y R E P O R T R E L IA B IL IT Y R E P O R T R E L IA B IL IT Y R E P O R T R E L IA B IL IT Y R E P O R T R E L IA B IL IT Y R E P O R T R E L IA B I

74LS189 equivalent

Abstract: 74LS200 AmZ8036 Z8104 74LS300 AM9511 Am2505 27s13 54S244 27LS00
Contextual Info: Advanced Micro Devices Condensed Catalog 1981 Advanced Micro Devices, Inc. Advanced Micro Devices reserves the right to make changes in its products without notice in order to improve design or performance characteristics. The company assumes no responsibility for the use of any circuits described herein.

triac tag 8518

Abstract: 70146 DS3654 X2864AD 7 segment display RL S5220 TC9160 la 4440 amplifier circuit diagram 300 watt philips ecg master replacement guide vtl 3829 A-C4 TCA965 equivalent
Contextual Info: 1985 0 / 0 / CONTENTS VOLUME I Introduction to IC MASTER 3 Advertisers’ Index 8 Master Selection Guide Function Index I0 Part Number Index 40 Part Number Guide 300 Logo Guide 346 Application Note Directory 349 Military Parts Directory 50I Testing 506 Cross Reference

N82S181

Abstract: 82S181 N82S141 74S200 mmi 3601 6331-1 prom tbp24sa10 93427C n82s147 MMI 6330
Contextual Info: MAY 1982 BIPOLAR MEMORY DIVISION 8192-BIT BIPOLAR PROM 1024 x 8 DESCRIPTION FEATURES The 82S180 and 82S181 are field program­ mable, which means that custom patterns are immediately available by follow ing the fusing procedure given in this data manual.

27S40

Abstract: Am27S40
Contextual Info: Am27S40/S41 Am 27S40/S41 4096 x 4 Bit Generic Series Bipolar IMOX PROM with ultra fast access time DISTINCTIVE CHARACTERISTICS Ultra fast access time " A " version (35ns max) — Fast access time Standard version (50ns max) — allow tremendous system speed improvements

c5088 transistor

Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154