APT802R4KN
Contextual Info: A d v a n ced P o w er Te c h n o l o g y • O D O APT802R4KN APT802R8KN S 800V 4.7A 2.40 Q 800V 4.4A 2.80 Q P * W E R M O S IV< N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified. Symbol Parameter
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apt802r4knapt802r8kno-22qab |
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APT802R4KN
Abstract: APT802R8KN
Contextual Info: • r A dvanced W ZA P o w e r Te c h n o l o g y * APT802R4KN APT802R8KN 800V 4.7A 2.400 800V 4.4A 2.80 Q POWER MOS IV@ N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATING S Symbol V V DSS ’d m V GS pD V sT G All Ratings: Tc = 25°C unless otherwise specified.
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apt802r4knapt802r8knaptb02r8kno-220ab |
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802r8kn
Contextual Info: D TO-220 G APT802R4KN APT802R8KN S 800V 4.7A 2.40 Ω 800V 4.4A 2.80 Ω POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS All Ratings: TC = 25°C unless otherwise specified. MAXIMUM RATINGS APT802R4KN APT802R8KN UNIT Drain-Source Voltage
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o-220apt802r4knapt802r8kno-220ab+1802r8kn
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APT802R4KN
Abstract: 802r8kn APT802R8KN
Contextual Info: A d v P o w a n c e d e r Technology APT802R4KN APT802R8KN 800V 4.7A 2.40 D 800V 4.4A 2.80Q P*W ER MOS IV® N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol All Ratings: Tc = 25°C unless otherwise specified. Parameter APT802R4KN
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apt802r4knapt802r8knapt802rro-22qab+1802r8kn
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PT802
Abstract: APT802R4KN
Contextual Info: O • R ADVANCED W . ^A P O W E R Te c h n o lo g y APT802R4KN 800V 4.7A 2.40U APT802R8KN 800V 4.4A 2.800 D Ô S H * W E R M O S P U N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS A ll R a tin g s : T c = 2 5 ° C u n le s s o th e rw is e s p e c ifie d .
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apt802r4knapt802r8knapt802r4/802r8kno-22qab+1pt802
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APT10026JN
Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
Contextual Info: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on
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mil-prf-19500iso9001apt10026jnapt1004rbn+8apt10050jnfredfetsapt8030jnapt4020bnapt5010lvfrapt5014lvrarf444apt10m09lvr
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APT802R4KN
Abstract: APT10050JN lf 3560 FREDFET APT5010JN APT8018 APT4065BN 690 mosfet APT10M13JNR R6KN
Contextual Info: APT PLASTIC PACKAGE MOSFET/FREDFET PRODUCTS BV DSS Volts 400 R ds ° n Ohms lD(Cont.) Amps PD Ciss(pF) Watts Typ Qg(nC) Typ APT Part No. APT4016BN APT4018BN APT4016BNR APT4018BNR APT4020BN APT4025BN APT4020BNR APT4025BNR LOW Ros(ON) LOW Ros(ON) UIS RATED
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apt4016bnapt4018bnapt4016bnrapt4018bnr+15apt4020bnapt4025bnapt4020bnrapt4025bnrapt10m13jnrapt10m15jnrapt802r4knapt10050jnlf 3560fredfetapt5010jnapt8018apt4065bn690 mosfetr6kn
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APT802R4KN
Abstract: APT6018LNR APT4030BN APT6060BN mosfet selector guide APT-6018 APT10M25bnfr APT5025BN k 3530 MOSFET 1r3b
Contextual Info: ADVANCED PO W ER Te c h n o lo g y APT MOSFET Selector Guide LOW GATE CHARGE - FAST SWITCHING FAMILY APT Part No. APT4016BN APT4018BN APT41I20BN APT4025BN APT4030BN APT4040BN APT5020BN APT5022BN APT5025BN APT5 H0BN APT5040BN APT5050BN APT6030BN APT6033BN
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apt4016bnapt4018bnapt41i20bnapt4025bn+14apt4030bnapt4040bnapt5020bnapt5022bnapt5025bnapt5040bnapt802r4knapt6018lnrapt6060bnmosfet selector guideapt-6018apt10m25bnfrk 3530 mosfet1r3b
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