AN077 Search Results

AN077

Abstract: SBB-2089 2089 ETC1-1-13 macom
Contextual Info: DESIGN APPLICATION NOTE - AN077 DESIGN APPLICATION NOTE - AN077 SBB-2089 High CSO Push-Pull CATV Amplifier Abstract: With the abundance of data and voice traffic being transmitted across standard cable and wireless pathways and the ever increasing linearity requirements of CATV amplifiers, there is a great need for amplification that optimizes gain,

sot23 s1a marking

Abstract: marking code S1A sot23
Contextual Info: SMBT3904.MMBT3904 NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S: Two galvanic internal isolated transistors with good matching in one package • Complementary types: SMBT3906. MMBT3906

Contextual Info: BCR141. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22kΩ, R2=22kΩ • BCR141S : Two internally isolated transistors with good matching in one multichip package • BCR141S: For orientation in reel see

Contextual Info: BFP181 Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at 3 collector currents from 0.5 mA to 12 mA 2 4 • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz 1 • Pb-free RoHS compliant package • Qualification report according to AEC-Q101 available

MARKING CODE CCB

Abstract: BC847S
Contextual Info: BC846S/ BC846U/ BC847S NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistors with good matching in one package • BC846S / U, BC847S: For orientation in reel see

family 78xx

Abstract: AN073 78XX family 001H AN07 X24C44 X24C45 78XX NOVRAM
Contextual Info: Application Note AN07 Interfacing the X24C44/45 NOVRAMs to NEC 78xx Microcontrollers by Applications Staff, May 1992 The following code demonstrates how the Xicor X24C44/45 serial NOVRAMs could be interfaced to the NEC 78xx microcontroller family when connected as

Contextual Info: BAS40./BAS140W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing • Pb-free RoHS compliant package • Qualified according AEC Q1011) BAS140W BAS40-02L

Contextual Info: LED Drivers for High Power LEDs ILD4120 1200 mA Step Down LED Driver Data Sheet Revision 5.0, 2011-08-23 Preliminary Industrial and Multimarket Edition 2011-08-23 Published by Infineon Technologies AG 81726 Munich, Germany 2011 Infineon Technologies AG

infineon AN077

Abstract: BCR401R AN066 AN077 AN159 BCR402R BFP181R
Contextual Info: BCR401R LED Driver Features • LED drive current of 10mA 3 • Output current adjustable up to 60mA with external resistor 2 4 1 • Supply voltage up to 18V • Easy paralleling of drivers to increase current • Low voltage overhead of 1.2V • High current accuracy at supply voltage variation

Contextual Info: BCR142. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22kΩ, R2=47kΩ • Pb-free (RoHS compliant) package • Qualified according AEC Q101 BCR142 BCR142W C 3 R1 R2 1 B

Contextual Info: BCR148. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit driver circuit • Built in bias resistor R1=47 kΩ, R2 =47 kΩ • BCR148S: Two internally isolated transistors with good matching in one multichip package • BCR148S: For orientation in reel see

Contextual Info: BAR90. Silicon Deep Trench PIN Diodes • Optimized for low bias current antenna switches in hand held applications • Very low capacitance at zero volt reverse bias at frequencies above 1GHz typ. 0.19 pF • Low forward resistance (typ. 1.3 Ω @ I F = 3 mA)

Contextual Info: BCR135. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit driver circuit • Built in bias resistor R1=10 kΩ, R2 =47 kΩ • BCR135S: Two internally isolated transistors with good matching in one multichip package • BCR135S: For orientation in reel see

Contextual Info: BFR106 NPN Silicon RF Transistor • High linearity low noise RF transistor 2 3 • 22 dBm OP1dB and 31 dBm OIP3 1 @ 900 MHz, 8 V, 70 mA • For UHF / VHF applications • Driver for multistage amplifiers • For linear broadband and antenna amplifiers • Collector design supports 5 V supply voltage

Contextual Info: BSP50-BSP52 NPN Silicon Darlington Transistors • High collector current 4 • Low collector-emitter saturation voltage 3 2 • Complementary types: BSP60 - BSP62 PNP 1 • Pb-free (RoHS compliant) package • Qualified according AEC Q101 Type Marking Pin Configuration

Contextual Info: LED Driver ICs for High Power LEDs ILD6150 60 V / 1.5 A High Efficiency Step-Down LED Driver IC Data Sheet Revision 3.1, 2014-06-05 Power Management and Multimarket Edition 2014-06-05 Published by Infineon Technologies AG 81726 Munich, Germany 2014 Infineon Technologies AG

Contextual Info: BFP460 NPN Silicon RF Transistor • General purpose low noise amplifier 3 for low voltage, low current applications 2 4 • High ESD robustness, typical 1500V HBM 1 • Low minimum noise figure 1.1 dB at 1.8 GHz • High linearity: output compression point

BC817K-40 thermal resistance

Abstract: BC817K-40 SOT343-3
Contextual Info: LED Drivers for Low Power LEDs BCR205W Ultra low dropout LED controller Data Sheet Revision 2.0, 2011-03-30 Industrial and Multimarket Edition 2011-03-30 Published by Infineon Technologies AG 81726 Munich, Germany 2011 Infineon Technologies AG All Rights Reserved.

transistor BC 339

Abstract: TRANSISTOR BC 629 339 marking code transistor PG-SOT363-6-1 MA000849564
Contextual Info: BC856S/U_BC857S PNP Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistor with good matching in one package • BC856S / U, BC857S: For orientation in reel see

Germanium Transistor

Abstract: 2.4GHz Power Amplifier transistor
Contextual Info: BFR720L3RH Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 2.0, 2012-09-03 RF & Protection Devices Edition 2012-09-03 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

Contextual Info: BFR183W Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA 3 2 1 • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Pb-free RoHS compliant and halogen-free package with visible leads

BAT62-02V

Contextual Info: BAT62. Silicon Schottky Diode • Low barrier diode for detectors up to GHz frequencies • Pb-free RoHS compliant package BAT62 " BAT62-03W BAT62-02V BAT62-02W BAT62-07W ! " BAT62-02L BAT62-02LS 4 ! , ,  ,    BAT62-07L4 , 1 3 D2 D1 2  1 2 BAT62-09S

Contextual Info: BFP182W Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at 3 collector currents from 1 mA to 20 mA 2 4 • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz 1 • Pb-free RoHS compliant and halogen-free package with visible leads

Contextual Info: BFR193 Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz, NFmin = 1 dB at 900 MHz • Pb-free RoHS compliant package • Qualification report according to AEC-Q101 available