9684 Search Results

HX84050

Contextual Info: Military & Space Products 5 MEGABIT MEMORY MODULE HX84050 RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 µm Process (Leff = 0.6 µm) • Listed on SMD #5962-96840 6 • Total Dose Hardness through 1x10 rad (SiO2) • Neutron Hardness through 1x1014 cm-2

AVW smd

Contextual Info: Honeywell Military & Space Products 5 MEGABIT MEMORY MODULE HX84050 RADIATION OTHER • • Listed on SMD #5962-96840 Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 jim Process (Lett = 0.6 jxm) • Total Dose Hardness through 1x10 rad (S i0 2)

Contextual Info: Honeywell Military & Space Products 5 MEGABIT MEMORY MODULE HX84050 RADIATION OTHER • • Listed on SMD #5962-96840 Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 jam Process (Leff = 0.6 ^m) • Total Dose Hardness through 1x106 rad (S i0 2)

LAD R

Contextual Info: Honeywel Military & Space Products 5 MEGABIT MEMORY MODULE HX84050 RADIATION OTHER • • Listed on SMD #5962-96840 Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 |a,m Process (Leff = 0.6 |a,m) • Total Dose Hardness through 1x106 rad (S i0 2)

Contextual Info: Detailed Specifications & Technical Data METRIC MEASUREMENT VERSION 9684 Multi-Conductor - Low Capacitance Computer Cable for EIA RS-232/422 For more Information please call 1-800-Belden1 Description: 24 AWG stranded 7x32 TC conductors, polyethylene insulation, twisted pairs, overall Beldfoil shield

ATX200-3505-226

Abstract: ATX-200-3505 ATX-20 ATX-200-3505-226 ATX200 15-24-4049 atx2003 15-24-40-49 IEC801-5 CSA22
Contextual Info: Order Code Model Number 258-9684 ATX200-3505-226 Output Voltage V15 V25 V3 V46 V56 V6 Minimum Load1 +3.3V +5 V +12 V -12 V -5 V +5 VSB 0.3 A 1.0 A 0.05 A 0.0 A 0.0 A 0.0 A Maximum Load 14.0A 22.0 A 6.0 A 0.8 A 0.5 A 10 mA Peak Regulation3 Load2 -10 A -

str f 6456

Abstract: str x 6456 SM 5126 BP STR F 6168 str 6668 STR G 6352 STR 6456 str f 6468 321 CJ 7121 AXP 209 IC
Contextual Info: Tem ic Se ni i co n fi li c t ci Sales Offices rs Addresses Europe France TE M IC France Les Q uadrants 3. avenue du centre B.P. 309 78054 S t.-Q uentin-en-Y veL nes Cedex Tel: 33 I 3060 7000 F a x :33 I 3060 V 11 i Germany TE M IC TE LEFU N K EN m icroelectronic G m bH

BV EI 304 3160

Abstract: str f 6456 ic sw 2604 BV EI 304 3510 BV EI 303 3535 STR 6755 STR 6456 STR G 6352 AMI Semiconductor 9449 sw 2604 ic
Contextual Info: T e m ic Sales Offices Semiconductors Addresses Europe France TEMIC France Les Quadrants 3, avenue du centre B.P. 309 78054 St.-Q uentin-en-Y velines Cedex Tel: 33 1 3060 7000 Fax: 33 1 3060 7111 Germany TEMIC TELEFUNKEN m icroelectronic GmbH Erfurter Strasse 31

EDSTLZ955

Abstract: pbtp
Contextual Info: EDSTL955/X 5.0 mm EDSTLZ955/X (5.08 mm) EDSTL955/X-OE (5.0 mm) EDSTLZ955/X-OE (5.08 mm) 2-24 poles, Spacing 5.0 mm or 5.08 mm insert required no. of poles x 2-24 poles, Spacing 5.0 mm or 5.08 mm insert required no. of poles x How to order see page 5 How to order see page 5

ed205

Contextual Info: ED205/XDS ED205/XDSBL 2-12 poles, Spacing 10.0 mm insert required no. of poles x 2-6 poles, Spacing 10.0 mm insert required no. of poles x How to order see page 5 Ratings: Rated Voltage Rated Current Wire Size Test Voltage Rated Torque/ScrewSize 750 V 24 A T60

ed104

Contextual Info: ED104/XDS ED105/XDS 2-12 poles, Spacing 5.0 mm insert required no. of poles x 2-12 poles, Spacing 5.0 mm insert required no. of poles x How to order see page 5 Ratings: Rated Voltage Rated Current Wire Size Test Voltage Rated Torque/ScrewSize 250 V 32 A T60

flip-flop 948

Abstract: 5252 f 1101 SN74AS8840 CNTR11-CNTR8 Zeus Component AS8832
Contextual Info: SN74AS8840. Digital Crossbar Switch • High-speed programmable switch for parallel processing applications • Dynam ically reconfigurable for fault-tolerant routing • 64 bidirectional data I/O s in 16 nibble four-bit groups • D ata I/O selection programmable by nibble

j143

Abstract: 24-A LR31928 omron relay
Contextual Info: PCB Relay G5NB A Miniature Relay with 1-pole 3-A Switching Capability and 10-kV Impulse Withstand Voltage • Highly efficient magnetic circuit for high sensitivity 200 mW . ■ Small, yet provides 10-kV impulse withstand voltage (between coil and contacts).

B161

Abstract: E41515 EN61810-1 LR31928
Contextual Info: PCB Relay G6DS Slim, Miniature Relay with 1-pole 5-A Switching Capability • ■ ■ ■ ■ ■ Slim 5-mm width and miniature size. 20.3 x 5.08 × 12.5 mm max. Ideal for high-density mounting. Delivers high switching performance (5 A at 250 VAC/30 VDC) and enables various loads all in

transistor c5578

Abstract: BELDEN 9116 DUOBOND(R) II 75 OHM SERIES 6 awm style 20233 7700A transformer Belden 138777 awm 2464 vw-1 300v shield cable specification transistor nec 8772 yokogawa DCS finder type 81.11 C5611 Transistor
Contextual Info: Asia / Pacific Belden Electronics Division Australia Hong Kong Shanghai 2200 U.S. Highway 27 South Richmond, IN 47374-7279 Phone: 765-983-5200 Fax: 765-983-5294 E-mail: info@belden.com Web: www.belden.com Belden Australia Pty Ltd. 100 Olympia Street Tottenham, Victoria 3012

diode E1110

Abstract: lN4002 LN4003 ANA 618 20010 TDB 0123 km b3170 E1110 Diode UB8560D MAA723 moc 2030
Contextual Info: elektronik-bauelem ente I WT VD AVL 1 /8 7 Bl. 2 E r l ä u t e r u n g e n z u m I n h a l t und zu d e n A n g a b e n d e r B a u e l e m e n t e - V e r g l e i c h s l i s t e D ie B a u e l e m e n t e - V e r g l e i c h s l i s t e e n t h ä l t a l l e in d e r B i l a n z v e r a n t w o r t u n g d e s V E B K o m b i n a t

RA08N1317M

Abstract: RA08N1317M-01
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA08N1317M 135-175MHz 8W 9.6V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA08N1317M is a 8-watt RF MOSFET Amplifier Module for 9.6-volt portable radios that operate in the 135- to 175-MHz

RA07M1317M

Abstract: RA07M1317M-01
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M1317M 135-175MHz 6.5W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M1317M is a 6.5-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 135- to

RA18H1213G

Abstract: RA18H1213G-01
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA18H1213G 1.24-1.30GHz 18W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA18H1213G is a 18-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 1.24- to

RA07H3340M

Abstract: RA07H3340M-01
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07H3340M 330-400MHz 7W 12.5V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07H3340M is a 7-watt RF MOSFET Amplifier Module for 12.5-volt portable radios that operate in the 330- to 400-MHz

80500 TRANSISTOR

Abstract: LM113-1H
Contextual Info: MICROCIRCUIT DATA SHEET Original Creation Date: 11/07/96 Last Update Date: 03/17/97 Last Major Revision Date: 11/07/96 MNLM113-1-X REV 1A0 REFERENCE DIODE General Description The LM113 is a temperature compensated, low voltage reference diode. It features

80500 TRANSISTOR

Abstract: lm113 LM113H/883B RETS113-1X block schematic of LM313 LM113H lm313
Contextual Info: LM113 LM313 Reference Diode General Description The LM113 LM313 are temperature compensated low voltage reference diodes They feature extremely-tight regulation over a wide range of operating currents in addition to an unusually-low breakdown voltage and good temperature

8E89

Contextual Info: お使いになる前に 取扱説明書 基本操作 電話をかける／受ける 文字入力 電話帳 メール 音・表示・照明の設定 カレンダー セキュリティ 便利な機能 ウィルコムの各種サービス データフォルダ

A81DC

Abstract: a21dc a51dc SG 2368 FE8800 ED8000 E78000 FA6400 0110FFFF e7040
Contextual Info: MOTOROLA Order at ANE408/0 SEMICONDUCTOR APPLICATION NOTE ANE408 Previously ANE008 Logarithmic/Linear Conversion Routines for DSP56000/1 Prepared by: Eric Cheval Motorola G eneva, Switzerland I. INTRODUCTION DSP chips are often connected to mono-circuits (cofidecs) in telecommunication applications. When programmed *Cs multichannel DTMF