900PF Search Results

2SK2481

Abstract: MP-25
Contextual Info: z r — • v — h M O S Field Effect T ra n sisto r 2SK2481 -V ^ iU /\0,7 X < > H M O S FET ^7 i 2SK2481«N5L+ ?Ol / i ÉS / ' t 7 - MOS FETTf, * < -> 31> < -y * > S T 'fo # « O f f — hHflE±30 V W IIT ’t o o i& x iin m ^ t. Ciss=900pFtI¥ O ^ f- h * 7 Œ it i* '! H 'o

Contextual Info: KSMD60N03L N-Channel Logic Level MOSFETs 30V, 30A, 0.023 Ω Features TO-252AA • Fast switching • r DS ON = 0.014Ω (Typ), V GS = 10V • r DS(ON) = 0.024Ω (Typ), V GS = 4.5V • Qg (Typ) = 9.6nC, V GS = 5V • Qgd (Typ) = 3.4nC • C ISS (Typ) = 900pF

smd transistor QG

Abstract: SMD Transistor nc 2SK2481
Contextual Info: Transistors IC SMD Type MOS Field Effect Transistors 2SK2481 Features Low On-state Resistance:RDS on =4 max.(VGS=10V,ID=2.0A) 1 .2 7 -0+ 0.1.1 TO-263 Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Low Ciss Ciss=900pF TYP 5 .2 8 -0+ 0.2.2 +0.1 0.81-0.1 2.54 2.54 +0.2

Contextual Info: Transistors IC MOSFET SMD Type Product specification 2SK2481 Features Low On-state Resistance:RDS on =4 max.(VGS=10V,ID=2.0A) 1 .2 7 -0+ 0.1.1 TO-263 Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Low Ciss Ciss=900pF TYP 5 .2 8 -0+ 0.2.2 +0.1 0.81-0.1 2.54 2.54 +0.2

vertical JFET

Abstract: diode c23 jfet cascode AN8610 spice models P-Channel Depletion Mosfets IRF130 datasheet list of P channel power mosfet DEPLETION MOSFET Harris Semiconductor jfet
Contextual Info: Harris Semiconductor No. AN8610.1 Harris Power MOSFETs February 1994 SPICING-UP SPICE II SOFTWARE FOR POWER MOSFET MODELING Author: C.F. Wheatley, Jr., H.R. Ronan, Jr., G.M. Dolny The SPICE II simulation software package is familiar to most designers working in computer-aided design of integrated

FQD60N03L

Contextual Info: FQD60N03L N-Channel Logic Level MOSFETs 30V, 30A, 0.023 Ω Features General Description • Fast switching This device employs advanced MOSFET technology and features low gate charge while maintaining low onresistance. • r DS ON = 0.014Ω (Typ), V GS = 10V

Power MOSFET Switching Waveforms A New Insight

Abstract: jfet cascode IRF130 AN-7506 vertical JFET intersil jfet mosfet SPICE MODEL
Contextual Info: Spicing-Up Spice II Software For Power MOSFET Modeling Application Note Title N86 bt pic-Up ce Softre r wer OST odel utho eyrds terrpoon, minctor, er ) OCI O frk The SPICE II simulation software package is familiar to most designers working in computer-aided design of integrated

circuit diagram of very long range remote control

Abstract: IC 567 8pin hk relay 12v 5 pin MD-5031 2314 mosfet amp 4546 marking 221 sop8 MD5031T
Contextual Info: CAT.No.TU 174 mMD5031T. DC-DC Converter Power IC Control IC and Power MOSFET incorporated in SOP8 Package MD5031T is a non-isolated, step down DC to DC converter power IC incorporating a main switch MOSFET and control circuit on a single chip. Using surface mount SOP8

4514v

Abstract: circuit diagram of very long range remote control amp 4546 marking 221 sop8 ic 4514 applications A 4514V A 4514v 8 pin
Contextual Info: CAT.No.TU 173-1 UMD5021T DC-DC Converter Power IC Control IC and Power MOSFET incorporated in SOP8 Package MD5021T is a non-isolated, step down DC to DC converter power IC incorporating a main switch MOSFET and control circuit on a single chip. Using surface mount SOP8

MD-5031

Abstract: MD5031T MOSFET 24V 1A 24V 1A mosfet
Contextual Info: DC-DC Converter Power IC ○入力電圧範囲 8 ~ 24V ○出力電圧範囲 0.8 ∼ 20V （外部抵抗により任意に設定可能） ○最大出力電流 1A ○発振周波数 100k ∼ 500kHz （外部コンデンサにより設定可能） ○High side MOSFET 内蔵

MOSFET S1A

Abstract: MD5021T
Contextual Info: DC-DC Converter Power IC ○入力電圧範囲 4.5 ~ 14V ○出力電圧範囲 0.8 ∼ 12V （外部抵抗により任意に設定可能） ○最大出力電流 2A ○発振周波数 100k ∼ 500kHz （外部コンデンサにより設定可能） ○High side MOSFET 内蔵

Contextual Info: SGB20N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:

K30N60

Abstract: PDF K30N60 igbt 30A SKW30N60 PG-TO-247-3 1000NC K30N60-
Contextual Info: SKW30N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls

AQY212G2S

Abstract: AQY222R1S AQV255GS AQY225R2 AQW612S AQS221 AQY225R1S AQY210S GE Power Controls AQV210S
Contextual Info: PhotoMOS选型参数表 GU…通用变更较大 GU GE RF HE HF HS PD Power GU SOP 商品名称 1a 4脚型 1a(6脚型) AC/DC兼用 AC/DC兼用 外形尺寸 （ ） 4.4 6.3 2.1 2.1 AQY212S AQY210S AQY214S AQV212S AQV215S AQV217S AQV210S AQV214S AQV216S AC(峰值)

G15N60

Contextual Info: SGP30N60 SGW30N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:

G20N60

Abstract: G20N60 IGBT
Contextual Info: SGP20N60 SGW20N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:

g20n60

Abstract: G20N60 IGBT
Contextual Info: SGB20N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:

K30N60

Abstract: IGBT K30N60
Contextual Info: SKW30N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls

BPW22A

Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Contextual Info: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey

AQV251G

Abstract: F50mA 250V AQV256 AQS221R2S AQV256H AQS221N2S AQV210S AQV214 AQV215S AQV216S
Contextual Info: PhotoMOSリレー選択表 PhotoMOSリレー選択表 GU…汎用ワイドバリエーション GU GE RF HE HF HS PD Power GU SOP 商品名 1a（4pin） 1a （6pin） AC/DC兼用 AC/DC兼用 外観形状 （ ） AQY212S ご注文品番 負荷電圧 4.4

MKP63

Abstract: film capacitor 0.33uf/CTX x1
Contextual Info: SPECIFICATION FOR APPROVAL Customer: Box-type MKP63 Metallized Polypropylene Film Type: Interference Suppression Capacitor Y2/x1 Class Customer code: Co. code: Date: “√” Signed by customer Specification Approved Approved conditionally Rejected 厦门法拉电子股份有限公司

K30N60

Contextual Info: SKW30N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls

4514v

Abstract: A 4514V IC 4528 IC A 4514 20082 csop8 TEL052 MD5021T IC A 4514V HCPL+4514v
Contextual Info: CAT.No.TU 171 NEW DC-DC Converter Power IC SOP8パッケージに 制御IC 出力PMOSを内蔵 MD5021Tは制御 I C、HighsideのMOSFETを1Chip化した 非絶縁ステップダウンDC-DC Converter Power I Cです。 パッケージには面実装タイプの

Zetex T 705

Abstract: M-FLAT A7 zener diode A36
Contextual Info: 19-4538; Rev 0; 4/09 KIT ATION EVALU E L B A IL AVA Internal-Switch Boost Regulator with Scan Driver, Op Amp, LDO, and VCOM Calibrator The MAX17102 includes a high-performance step-up regulator with integrated switch, a multichannel high-voltage level-shifting scan driver with a dedicated discharge