8A TRANSISTOR Search Results

sec irf840

Abstract: testing smps circuit Transistor IRF840 500V 8 TO220 CEP840N power supply IRF840 APPLICATION FQI9N50 irf840 CEF840N ssm840p FQP9N50
Contextual Info: CEP840N/CEB840N CEI840N/CEF840N N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS ON ID @VGS CEP840N 500V 0.85Ω 8A 10V CEB840N 500V 0.85Ω 8A 10V CEI840N 500V 0.85Ω 8A 10V CEF840N 500V 0.85Ω 8A e 10V D Super high dense cell design for extremely low RDS(ON).

Contextual Info: CEP09N7A/CEB09N7A CEF09N7A N-Channel Enhancement Mode Field Effect Transistor FEATURES VDSS RDS ON ID @VGS CEP09N7A Type 700V 1.2Ω 8A 10V CEB09N7A 700V 1.2Ω 8A 10V CEF09N7A 700V 1.2Ω 8A e 10V D Super high dense cell design for extremely low RDS(ON).

Contextual Info: CEP840L/CEB840L CEF840L N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS ON ID @VGS CEP840L 500V 0.8Ω 8A 10V CEB840L 500V 0.8Ω 8A 10V CEF840L 500V 0.8Ω 8A e 10V D Super high dense cell design for extremely low RDS(ON).

cep840g

Contextual Info: CEP840G/CEB840G CEF840G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS ON ID @VGS CEP840G 500V 0.85Ω 8A 10V CEB840G 500V 0.85Ω 8A 10V CEF840G 500V 0.85Ω 8A e 10V D Super high dense cell design for extremely low RDS(ON).

Rad Hard in Fairchild for MOSFET

Abstract: 1E14 2E12 FSS230R4 JANSR2N7400 igss
Contextual Info: JANSR2N7400 Formerly FSS230R4 8A, 200V, 0.440 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N74 00 /Subject (8A, 200V, 0.440 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 8A, 200V, 0.440

2E12

Abstract: FSL130R4 JANSR2N7395 Rad Hard in Fairchild for MOSFET
Contextual Info: JANSR2N7395 Formerly FSL130R4 8A, 100V, 0.230 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N73 95 /Subject (8A, 100V, 0.230 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 8A, 100V, 0.230

AMS1508

Abstract: AMS1508CM AMS1508CT
Contextual Info: Advanced Monolithic Systems AMS1508 8A LOW DROPOUT VOLTAGE REGULATOR FEATURES APPLICATIONS • Adjustable or Fixed Output 1.5V, 2.5V, 2.85V, 3.0V, 3.3V, 3.5V and 5.0V • Output Current of 8A • Low Dropout, 500mV at 8A Output Current • Fast Transient Response

AMS1508

Abstract: AMS1508CM AMS1508CT
Contextual Info: Advanced Monolithic Systems AMS1508 8A LOW DROPOUT VOLTAGE REGULATOR FEATURES APPLICATIONS • Adjustable or Fixed Output 1.5V, 2.5V, 2.85V, 3.0V, 3.3V, 3.5V and 5.0V • Output Current of 8A • Low Dropout, 500mV at 8A Output Current • Fast Transient Response

GES5307

Abstract: 2n5307 2N5308 2N5308A GES5308 GES5308A
Contextual Info: ~q £ SOLID STATE 01 DE 1 3fl750âl 0017^51 S | 3875081 G E SOLID STATE 01E 17951 D Signal Transistors 2N5307, 8, 8A, GES5307, 8, 8A -p z i Silicon Darlington Transistors TO-92 TO-98 The GE/RCA 2N5307, 08, 08A and GES5307, 8, and 8A are planar, epitaxial, passivated NPN silicon Darlington transis­

AMS1508

Abstract: AMS1508CM AMS1508CT
Contextual Info: Advanced Monolithic Systems AMS1508 8A LOW DROPOUT VOLTAGE REGULATOR RoHS compliant FEATURES APPLICATIONS • Adjustable or Fixed Output 1.5V, 2.5V, 2.85V, 3.0V, 3.3V, 3.5V and 5.0V • Output Current of 8A • Low Dropout, 500mV at 8A Output Current • Fast Transient Response

FFP08H60S

Abstract: FFP08H60STU
Contextual Info: FFP08H60S Hyperfast 2 Rectifier tm Features 8A, 600V Hyperfast 2 Rectifier • High Speed Switching trr=45ns(Max. @ IF=8A ) The FFP08H60S is hyperfast2 rectifier (trr=45ns(Max.) @ IF=8A). it has half the recovery time of ultrafast rectifier and is silicon nitride passivated ion-implanted epitaxial planar construction.

2SA1327

Abstract: transistor Ic 1A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1327 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -0.5V(Max.)@IC= -8A ·High DC Current Gain: hFE= 70(Min.)@ IC= -8A APPLICATIONS ·Strobe flash applications.

Contextual Info: ^ Supertex VN22A in c . N-Channel Enhancement-Mode Vertical DMOS FETs B V dss / R DS ON Order Number / Package TO-92 Dice* 40V 0.35Q 8A VN2204N3 VN2204ND 60V 0.350 8A VN2206N3 VN2206ND 100 V 0.35H 8A VN2210N3 VN2210ND b v dgs t (max) If Ordering Information

FFPF08H60STU

Abstract: FFPF08H60S F08H60S HALF WAVE RECTIFIER CIRCUITS high speed
Contextual Info: FFPF08H60S Hyperfast 2 Rectifier tm Features 8A, 600V Hyperfast 2 Rectifier • High Speed Switching trr=45ns(Max. @ IF=8A ) The FFPF08H60S is hyperfast2 rectifier (trr=45ns(Max.) @ IF=8A). it has half the recovery time of ultrafast rectifier and is silicon nitride passivated ion-implanted epitaxial planar construction.

2N6796

Abstract: TB334
Contextual Info: 2N6796 Data Sheet December 2001 8A, 100V, 0.180 Ohm, N-Channel Power MOSFET Features • 8A, 100V The 2N6796 is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor

IC 0116 DC

Abstract: ic 0116 ic 4440 0116 ic TS13007 TS13007CZ transistor 400V 8A HIGH CURRENT NPN SILICON TRANSISTOR
Contextual Info: TS13007 High Voltage NPN Transistor BVCEO = 400V BVCBO = 700V Ic = 8A VCE SAT , = 3V @ Ic / Ib = 8A / 2A Pin assignment: 1. Base 2. Collector 3. Emitter Features — Ordering Information Suitable for switching regulator and motor control — High speed switching

Application of irf840

Abstract: TRANSISTOR mosfet IRF840 datasheet irf840 mosfet diode 400V 4A irf840 equivalent power supply IRF840 APPLICATION IRF840 MOSFET irf840 power supply transistor irf840 IRF840 and its equivalent
Contextual Info: IRF840 Data Sheet January 2002 8A, 500V, 0.850 Ohm, N-Channel Power MOSFET Features • 8A, 500V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

npn high voltage transistor 500v 8a

Abstract: 2SC4139 si50
Contextual Info: 2SC4139 Application : Switching Regulator and General Purpose µA V IEBO VEB=10V 100max µA V 10 V V BR CEO IC=25mA 400min 15(Pulse30) A hFE VCE=4V, IC=8A 10 to 30 IB 5 A VCE(sat) IC=8A, IB=1.6A 0.5max PC 120(Tc=25°C) W VBE(sat) IC=8A, IB=1.6A 1.3max V Tj

2SB1382

Abstract: transistor 12v 8A 2SD2082 pnp darlington VCE 120V
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -120V(Min) ·High DC Current Gain: hFE= 2000( Min.) @(IC= -8A, VCE= -4V) ·Low Collector Saturation Voltage: VCE(sat)= -1.5V(Max)@ (IC= -8A, IB= -16mA)

2SC4139

Abstract: npn triple diffused transistor 500v 8a
Contextual Info: 2SC4139 Application : Switching Regulator and General Purpose µA V IEBO VEB=10V 100max µA V 10 V V BR CEO IC=25mA 400min 15(Pulse30) A hFE VCE=4V, IC=8A 10 to 30 IB 5 A VCE(sat) IC=8A, IB=1.6A 0.5max PC 120(Tc=25°C) W VBE(sat) IC=8A, IB=1.6A 1.3max V Tj

Application of irf840

Abstract: irf840 power supply TRANSISTOR mosfet IRF840 datasheet irf840 mosfet IRF840 TA17425 TB334
Contextual Info: IRF840 Data Sheet July 1999 8A, 500V, 0.850 Ohm, N-Channel Power MOSFET Ordering Information PART NUMBER IRF840 NOTE: PACKAGE TO-220AB 2312.3 Features • 8A, 500V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,

AN7254

Abstract: AN7260 RFP8N20L TB334
Contextual Info: RFP8N20L Data Sheet January 2002 8A, 200V, 0.600 Ohm, Logic Level, N-Channel Power MOSFET Features • 8A, 200V This N-Channel enhancement mode silicon gate power field effect transistor is specifically designed for use with logic level 5V driving sources in applications such as

IC 0116 DC

Abstract: NPN Transistor 8A transistor b 40 Ic-5A datasheet npn switching transistor Ic 5A marking A07 marking code IC 4A transistor npn 2a switching applications TS13007B TS13007BCZ transistor 2a h
Contextual Info: TS13007B High Voltage NPN Transistor TO-220 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE SAT Features 8A 3V @ IC / IB = 8A / 2A Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type

STC08DE150HP

Abstract: mosfet 1500v Marking 8A to247 f BA157 C08DE150HP JESD97 mosfet 1500v for smps
Contextual Info: STC08DE150HP Hybrid emitter switched bipolar transistor ESBT 1500V - 8A - 0.075 W Preliminary Data General features Table 1. General features VCS ON IC RCS(ON) 0.6V 8A 0.075Ω • Low equivalent on resistance ■ Very fast-switch, up to 150 kHz ■ Squared RBSOA, up to 1500 V