8A MARKING Search Results

gp8nc60

Contextual Info: STGB8NC60K - STGD8NC60K STGP8NC60K N-channel 600V - 8A - D2PAK / DPAK / TO-220 Short circuit rated PowerMESH IGBT Features Type VCES VCE sat Typ @25°C IC @100°C STGB8NC60K 600V 2.2V 8A STGD8NC60K 600V 2.2V 8A STGP8NC60K 600V 2.2V 8A • Lower on voltage drop (Vcesat)

GP8NC60KD

Abstract: gp8nc60 gd8nc60kd STGP8NC60KD GB8NC60KD
Contextual Info: STGB8NC60KD - STGD8NC60KD STGP8NC60KD N-channel 600V - 8A - D2PAK / DPAK / TO-220 Short circuit rated PowerMESH IGBT Features Type VCES VCE sat Typ @25°C IC @100°C STGB8NC60KD 600V 2.2V 8A STGD8NC60KD 600V 2.2V 8A STGP8NC60KD 600V 2.2V 8A • Lower on voltage drop (Vcesat)

gp8nc60

Abstract: GD8NC60K GB8NC60K STGP8NC60K GP8NC60K JESD97 STGB8NC60K STGD8NC60K
Contextual Info: STGB8NC60K - STGD8NC60K STGP8NC60K N-channel 600V - 8A - D2PAK / DPAK / TO-220 Short circuit rated PowerMESH IGBT Features Type VCES VCE sat Typ @25°C IC @100°C STGB8NC60K 600V 2.2V 8A STGD8NC60K 600V 2.2V 8A STGP8NC60K 600V 2.2V 8A • Lower on voltage drop (Vcesat)

W9NK90Z

Abstract: p9nk90 W9NK90Z equivalent STP9NK90Z F9NK90Z P9NK90Z STB9NK90Z STF9NK90Z STW9NK90Z MOSFET 900V TO-220
Contextual Info: STB9NK90Z - STFPNK90Z STP9NK90Z - STW9NK90Z N-channel 900V - 1.1Ω - 8A - TO-220 /FP- D2PAK - TO-247 Zener-protected superMESHTM MOSFET General features Type VDSS RDS on ID Pw STB9NK90Z 900V <1.3Ω 8A 160 W 3 3 STW9NK90Z 900V <1.3Ω 8A 160 W STP9NK90Z

P8NM50FP

Abstract: P8NM50 JESD97 STP8NM50 STP8NM50FP
Contextual Info: STP8NM50 STP8NM50FP N-channel 550V @ Tjmax - 0.7Ω - 8A - TO-220 - TO-220FP MDmesh Power MOSFET General features Type VDSS @Tjmax RDS(on) STP8NM50 550V <0.8Ω 8A STP8NM50FP 550V <0.8Ω 8A (1) ID 1. Limited only by maximum temperature allowed 3 1 •

W9NK90Z equivalent

Abstract: P9NK90 P9NK90Z mosfet 8A 900V TO-220
Contextual Info: STB9NK90Z - STF9NK90Z STP9NK90Z - STW9NK90Z N-channel 900V - 1.1Ω - 8A - TO-220 /FP- D2PAK - TO-247 Zener-protected superMESHTM MOSFET General features Type VDSS RDS on ID Pw STB9NK90Z 900V <1.3Ω 8A 160 W 3 3 STW9NK90Z 900V <1.3Ω 8A 160 W STP9NK90Z

Contextual Info: STP8NM50 STP8NM50FP N-channel 550V @ Tjmax - 0.7Ω - 8A - TO-220 - TO-220FP MDmesh Power MOSFET General features Type VDSS @Tjmax RDS(on) STP8NM50 550V <0.8Ω 8A STP8NM50FP 550V <0.8Ω 8A (1) ID 1. Limited only by maximum temperature allowed 100% avalanche tested

FFP08H60S

Abstract: FFP08H60STU
Contextual Info: FFP08H60S Hyperfast 2 Rectifier tm Features 8A, 600V Hyperfast 2 Rectifier • High Speed Switching trr=45ns(Max. @ IF=8A ) The FFP08H60S is hyperfast2 rectifier (trr=45ns(Max.) @ IF=8A). it has half the recovery time of ultrafast rectifier and is silicon nitride passivated ion-implanted epitaxial planar construction.

Contextual Info: STB8NM60D STP8NM60D N-CHANNEL 600V - 0.9Ω - 8A - TO-220/D2PAK Fast Diode MDmesh Power MOSFET General features Type VDSS RDS on ID PTOT STB8NM60D STP8NM60D 600V 600V < 1.0Ω < 1.0Ω 8A 8A 100W 100W • High dv/dt and avalanche capabilities ■ 100% avalanche rated

B8NM60D

Abstract: JESD97 STB8NM60D STP8NM60D ZVS phase-shift converters
Contextual Info: STB8NM60D STP8NM60D N-CHANNEL 600V - 0.9Ω - 8A - TO-220/D2PAK Fast Diode MDmesh Power MOSFET General features Type VDSS RDS on ID PTOT STB8NM60D STP8NM60D 600V 600V < 1.0Ω < 1.0Ω 8A 8A 100W 100W • High dv/dt and avalanche capabilities ■ 100% avalanche rated

P8NM50FP

Abstract: P8NM50
Contextual Info: STP8NM50 STP8NM50FP N-channel 550V @ Tjmax - 0.7Ω - 8A - TO-220 - TO-220FP MDmesh Power MOSFET General features Type VDSS @Tjmax RDS(on) STP8NM50 550V <0.8Ω 8A STP8NM50FP 550V <0.8Ω 8A (1) ID 1. Limited only by maximum temperature allowed 3 1 •

P9NK90

Abstract: w9nk90z W9NK90Z equivalent STP9NK90 P9NK90Z MOSFET 900V TO-220 f9nk90 STW9NK90Z F9NK90Z STB9NK90Z
Contextual Info: STB9NK90Z - STF9NK90Z STP9NK90Z - STW9NK90Z N-channel 900V - 1.1Ω - 8A - TO-220 /FP- D2PAK - TO-247 Zener-protected superMESHTM MOSFET Features Type VDSS RDS on ID Pw STB9NK90Z 900V <1.3Ω 8A 160 W 3 3 STW9NK90Z 900V <1.3Ω 8A 160 W STP9NK90Z 900V <1.3Ω

FFPF08H60STU

Abstract: FFPF08H60S F08H60S HALF WAVE RECTIFIER CIRCUITS high speed
Contextual Info: FFPF08H60S Hyperfast 2 Rectifier tm Features 8A, 600V Hyperfast 2 Rectifier • High Speed Switching trr=45ns(Max. @ IF=8A ) The FFPF08H60S is hyperfast2 rectifier (trr=45ns(Max.) @ IF=8A). it has half the recovery time of ultrafast rectifier and is silicon nitride passivated ion-implanted epitaxial planar construction.

FFPF08H60S

Abstract: IF8A F08H60S
Contextual Info: FFPF08H60S Hyperfast 2 Rectifier tm Features 8A, 600V Hyperfast 2 Rectifier • High Speed Switching trr=45ns(Max. @ IF=8A ) The FFPF08H60S is hyperfast2 rectifier (trr=45ns(Max.) @ IF=8A). it has half the recovery time of ultrafast rectifier and is silicon nitride passivated ion-implanted epitaxial planar construction.

irf634

Abstract: st 393 IRF634FP JESD97 IRF63 irf6
Contextual Info: IRF634 IRF634FP N-channel 250V - 0.38Ω - 8A TO-220 /TO-220FP Mesh Overlay Power MOSFET General features Type VDSS RDS on ID IRF634 250V <0.45Ω 8A IRF634FP 250V <0.45Ω 8A 3 • Extremely High dv/dt Capability ■ 100% Avalanche Tested 1 TO-220 3 2

IRF634

Abstract: IRF634FP JESD97
Contextual Info: IRF634 IRF634FP N-channel 250V - 0.38Ω - 8A TO-220 /TO-220FP Mesh Overlay Power MOSFET General features Type VDSS RDS on ID IRF634 250V <0.45Ω 8A IRF634FP 250V <0.45Ω 8A 3 • Extremely High dv/dt Capability ■ 100% Avalanche Tested 1 3 2 1 TO-220

Marking 8A

Abstract: MARK 8A Package Marking .8A MMBZ5226B Marking 8A 2 sot23 marking 8A
Contextual Info: SEMICONDUCTOR MMBZ5226B MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking 8A No. 1 Item Marking Device Mark 8A MMBZ5226B - - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method

Contextual Info: FFPF08H60S Hyperfast 2 Rectifier tm Features 8A, 600V Hyperfast 2 Rectifier • High Speed Switching rrt =45ns(Max. @ IF=8A ) • High Reverse Voltage and High Reliability • Avalanche Energy Rated The FFPF08H60S is hyperfast2 rectifier (trr=45ns(Max.) @

F08S60ST

Abstract: FFPF08S60STTU
Contextual Info: STEALTH II Rectifier FFPF08S60ST tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 30ns @ IF = 8A The FFPF08S60ST is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.

Si7114

Contextual Info: MP38874 8A, 21V, 600KHz Step-Down Converter with Synchronizable Gate Driver The Future of Analog IC Technology DESCRIPTION FEATURES The MP38874 is a monolithic step-down switch mode converter with a built in internal power MOSFET. It achieves 8A continuous output

UCR8PM

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UCR8PM Preliminary TRIAC 8A TRIAC  DESCRIPTION The UTC UCR8PM is an 8A standard triac. The UTC UCR8PM is suitable for use in inversion operation of capacitor motor, washing machine and other general controlling devices. 

Contextual Info: XR76108 and XR76112 PowerBlox 8A and 12A Synchronous Step Down COT Regulator FEATURES • 8A and 12A Capable Step Down Regulators General Description The XR76108 and XR76112 are synchronous step-down regulators combining the controller, drivers, bootstrap

f08s60sn

Abstract: TT2202 2202L FFP08S60SNTU f08s60
Contextual Info: STEALTHTM II Rectifier FFP08S60SN tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 25ns @ IF = 8A The FFP08S60SN is STEALTHTM IIrectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.

f08s60sn

Abstract: TT2202 TT220 F08S f08s60
Contextual Info: STEALTHTM II Rectifier FFP08S60SN tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 25ns @ IF = 8A The FFP08S60SN is STEALTHTM IIrectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.