842 FET Search Results

8 pin ic 3844 for 5 volts

Abstract: PWM IC 8 PIN DIP 3844 PIN CONFIGURATION OF IC 3844 3844 pwm circuits AS3842 as3843 application note buck pcb design on uc3842 3842 boost converter 3845 PWM power supply application note pin diagram of ic 3843
Contextual Info: SEMICONDUCTOR Excellence in A nalog Pow er P ro d u cts AS3 842/3 843/3844/3845 Current M ode Controller FEATURES APPLICATIONS • 2.5V Bandgap Reference Trimmed to 1% and Temperature Compensated AS3842/3 Oscillators Trimmed for Precision Duty Cycle Clamp

Contextual Info: EVAL-ADIsimPower User Guide UG-842 One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106, U.S.A. • Tel: 781.329.4700 • Fax: 781.461.3113 • www.analog.com Assembly Tips for the Blank Evaluation ADIsimPower Board OVERVIEW The ADIsimPower EVAL-ADIsimPower blank/unpopulated

FLk052

Contextual Info: FLK052XV f u j Ït s u GaAs FET and H E M T Chips FEATURES • • • • High Output Power: P-|dB = 27.0dBm Typ. High Gain: G ^ b = 7.0dB(Typ.) High PAE: r iadd = 32%(Typ.) Proven Reliability DESCRIPTION The FLK052XV chip is a power GaAs FET that is designed for

FLK052xv

Contextual Info: FLK052XV Füjrrsu GaAs FE T and H E M T Chips FEATURES • • • • High O utput Power: P-|<jB = 27.0dBm Typ. High Gain: G ^ g = 7.0dB(Typ.) High PAE: r iadd = 32% (Typ.) Proven Reliability DESCRIPTION The FLK052XV chip is a pow er G aAs FET that is designed for

KU 601

Abstract: FLK027WG FLK027
Contextual Info: FLK027WG X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 24.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK027WG is a power GaAs FET that is designed for general

Contextual Info: FLK027WG X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 24.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK027WG is a power GaAs FET that is designed for general

Contextual Info: PFIOIOA MOS FET Power Amplifier Module for P/C LAN HITACHI Features • • • • Frequency range: 806 to 824 MHz Surface mounted small package: 1 cc, 3g with shielded cover Low voltage operation: 6 V Low power control current: 300 jiA Typ Pin Arrangement

fujitsu gaas fet

Abstract: FLK027WG FLK027
Contextual Info: FLK027WG X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P-|<jB = 24.0dBm Typ. High Gain: G ^ b = 7.0dB(Typ.) High PAE: riadd = 32%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK027WG is a power GaAs FET that is designed for general

FLK027WG

Contextual Info: FLK027WG X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 24.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK027WG is a power GaAs FET that is designed for general

FLK027WG

Contextual Info: FLK027WG X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 24.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: hadd = 32%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK027WG is a power GaAs FET that is designed for general

FLK027WG

Contextual Info: FLK027WG X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 24.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK027WG is a power GaAs FET that is designed for general

FLK027WG

Contextual Info: FLK027WG X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 24.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK027WG is a power GaAs FET that is designed for general

Contextual Info: FLL300IP-4 FEATURES • • • • Push-Pull Configuration High PAE: 40% Typ. Broad Frequency Range: 3400 to 3600 MHz. Suitable for class A operation. DESCRIPTION The FLL300IP-4 is a 30 Watt GaAs FET that employs a push-pull design which offers ease of matching, greater consistency and a broader bandwidth for high

BL01RN1-A62

Abstract: vapc PF1010A Hitachi DSA00311
Contextual Info: PF1010A MOS FET Power Amplifier Module for P/C LAN ADE-208-106A Z 2nd. Edition July 1996 Features • • • • Frequency range: 806 to 824 MHz Surface mounted small package: 1 cc, 3g with shielded cover Loe voltage operation: 6 V Low power control current: 300 µA Typ

FLL300IP-4

Contextual Info: FLL300IP-4 FEATURES • • • • Push-Pull Configuration High PAE: 40% Typ. Broad Frequency Range: 3400 to 3600 MHz. Suitable for class A operation. DESCRIPTION The FLL300IP-4 is a 30 Watt GaAs FET that employs a push-pull design which offers ease of matching, greater consistency and a broader bandwidth for high

fll300ip

Contextual Info: FLL300IP-4 FEATURES • • • • Push-Pull Configuration High PAE: 40% Typ. Broad Frequency Range: 3400 to 3600 MHz. Suitable for class A operation. DESCRIPTION The FLL300IP-4 is a 30 Watt GaAs FET that employs a push-pull design which offers ease of matching, greater consistency and a broader bandwidth for high

FLL300IP-4

Abstract: FLL30
Contextual Info: FLL300IP-4 FEATURES • • • • Push-Pull Configuration High PAE: 40% Typ. Broad Frequency Range: 3400 to 3600 MHz. Suitable for class A operation. DESCRIPTION The FLL300IP-4 is a 30 Watt GaAs FET that employs a push-pull design which offers ease of matching, greater consistency and a broader bandwidth for high

FLL300IP-4

Abstract: 15 GHz power amplifier Output Power 37dBm Fujitsu GaAs FET Amplifier fujitsu gaas fet L-band
Contextual Info: FLL300IP-4 FEATURES • • • • Push-Pull Configuration High PAE: 40% Typ. Broad Frequency Range: 3400 to 3600 MHz. Suitable for class A operation. DESCRIPTION The FLL300IP-4 is a 30 Watt GaAs FET that employs a push-pull design which offers ease of matching, greater consistency and a broader bandwidth for high

ne71084

Abstract: GaAs MESFET NE25139 NE4200 NE32684A NE71000 71083 ne72089 NE72000 MESFET Application
Contextual Info: Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs Typical Spécifications @ Ta * ZS'C ftffiW M M R M Bat* Part Humber Test Frequency Gita LeagM Width f Range | Frequency C6HZ Min) Pows Bias NF/Gi Bias Available Vos Ids HFow 6* Vds Ids PliB Package

50ht2

Abstract: BL01RN1-A62 vapc PF1010A Hitachi DSA0064
Contextual Info: PF1010A MOS FET Power Amplifier Module for P/C LAN ADE-208-106A Z 2nd. Edition July 1996 Features • • • • Frequency range: 806 to 824 MHz Surface mounted small package: 1 cc, 3g with shielded cover Low voltage operation: 6 V Low power control current: 300 µA Typ

equivalent irf840

Abstract: 2SK173 2N6658 BUZ44 vn0106n1 VN64GA BUZ 840 VN0104N4 VN0106N5 IRF232
Contextual Info: Silico n ix 1-1? f l MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 TO-22QAB Breakdown Voltage (Volts) 100 100 100 100 100 100 100 100 100 100 90 90 90 8CI 80 60 6Cl 60 60 60 60 60 60 60 60

VN64GA

Abstract: 2N6658 IRF120 IRF122 IRF130 IRF132 IRF140 IRF142 IRF150 IRF152
Contextual Info: MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 TO-22QAB Breakdown Voltage (Volts) 100 100 100 100 100 100 100 100 100 100 90 90 90 8CI 80 60 6Cl 60 60 60 60 60 60 60 60 60 60 60 40 40 35 35

IRF440

Abstract: IRF450 irf420 IRF340 IRF350 IRF740 IRF820 IRF840 VNP002A
Contextual Info: Ü Ü A C D ^ U /C D M i v i a D r /\W i iv iv ^ i v T T k iv r i i i i i v t i v u v i w i C A lA A ^ /\r f^ .n \M é g ^ i^ v iv i w u iv i^ 1-2 MOSPOWER Prime Product Selector Guide *2 0 0 °C RATING I i Packages: BV qss Volts 4 5 0 -5 0 0 TO-3 TO-220

VN64GA

Abstract: irf840 TD4A IRF340 IRF350 IRF440 IRF450 IRF740 IRF820 VNP002A
Contextual Info: Ü Ü A C D ^ U / C D M i v i a D r/\W i iv iv ^ i v T T k iv r i i i i i v t i v u v i w i C A lA A ^ / \ r f^ .n \M é g ^ i ^ v i v i w u iv i^ 1-2 MOSPOWER Prime Product Selector Guide *2 0 0 °C RATING I i Packages: BVqss Volts 450-500 TO-3 TO-220 Siliconix