82064 Search Results

Contextual Info: ín t g l 82064 CHMOS WINCHESTER DISK CONTROLLER WITH ON-CHIP ERROR DETECTION AND CORRECTION Low Power CHMOS III On-Chip ECC Unit Automatically Corrects Errors 5 or 11-Bit Correction—Span Software Selectable Implied Seeks with Read/Write Commands Multiple Sector Transfer Capability

intel 82064

Abstract: wd2010 seagate task switching in 80286 microprocessor wd1010a MFM encoder 231369 82064 ST506 mfm decoder
Contextual Info: in t l 82064 CHMOS WINCHESTER DISK CONTROLLER WITH ON-CHIP ERROR DETECTION AND CORRECTION Low Power CHMOS Hi On-Chip ECC Unit Automatically Corrects Errors 5 or 11-Bit Correction—Span Software Selectable Implied Seeks with Read/Write Commands Multiple Sector Transfer Capability

mfm encoder

Abstract: intel 82064 ff-310 WD1010A-05
Contextual Info: intgl 82064 CHMOS WINCHESTER DISK CONTROLLER WITH ON-CHIP ERROR DETECTION AND CORRECTION Low Power CHMOS III On-Chip ECC Unit Automatically Corrects Errors 5 or 11-Bit Correction—Span Software Selectable Implied Seeks with Read/Write Commands Multiple Sector Transfer Capability

intel 82064

Abstract: wd1010a wd2010 82064 80286 address decoder INCOMING RAW MATERIAL flowchart fxs 100 10 microprocessor 80286 internal architecture resistor, BCR 1/8 WATT western digital
Contextual Info: in t l 82064 CHMOS WINCHESTER DISK CONTROLLER WITH ON-CHIP ERROR DETECTION AND CORRECTION Low Power CHMOS Hi On-Chip ECC Unit Automatically Corrects Errors 5 or 11-Bit Correction—Span Software Selectable Implied Seeks with Read/Write Commands Multiple Sector Transfer Capability

2n5401 smd

Abstract: 2n5401ub SOC5401 SOC5401SW 2N5401UB1 TRANSISTOR SMD CODES SOC5401HRB escc 2n5401 transistor TRANSISTOR SMD MARKING CODES
Contextual Info: 2N5401HR Hi-Rel PNP bipolar transistor 150 V - 0.5 A Features 3 BVCEO 150 V IC max 0.5 A HFE at 10 V - 150 mA > 60 Operating temperature range -65°C to +200°C 1 1 2 2 3 TO-18 LCC-3 3 • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics ■

NEC k 2134 transistor

Abstract: nec 14312 transistor 3 pin ir receiver module 38khz NEC m 2134 transistor TSAL62 TSAL6200 TSOP2830WE1 TSOP2833WE1 TSOP2836WE1 TSOP2837WE1
Contextual Info: TSOP28.WE1 Vishay Semiconductors Photo Modules for PCM Remote Control Systems Available types for different carrier frequencies Type TSOP2830WE1 TSOP2836WE1 TSOP2838WE1 TSOP2856WE1 fo 30 kHz 36 kHz 38 kHz 56 kHz Type TSOP2833WE1 TSOP2837WE1 TSOP2840WE1 fo

CPH5810

Abstract: MCH3312
Contextual Info: CPH5810 注文コード No. N 8 2 0 6 MOSFET : P チャネル MOS 形シリコン電界効果トランジスタ SBD : ショットキバリアダイオード CPH5810 汎用スイッチングデバイス 特長 ・P チャネル MOS 形電界効果トランジスタ（MCH3312）

IRKE*240-10S10

Abstract: IRKEL240-14S20 TO200AC DO-205 12FL100S05 80061 DO-205AB, DO-9 20ETF02 20ETF02S 20ETF04
Contextual Info: International Rectifier Fast Recovery Diodes I V Part Number RRM V I @T C FAV (A) (C) 50 Hz V FM @ FSM 60Hz π X F(AV) (V) (A) R t rr (nS) Θ JC (°C/W) Notes Circuit Fax-on-Demand D-Pak 20ETF02S 200 20 97 250 260 1.3 160 0.9 20ETF04S 400 20 97 250 260 1.3

Contextual Info: TSOP28.WE1 Vishay Telefunken Photo Modules for PCM Remote Control Systems Available types for different carrier frequencies Type TSOP2830WE1 TSOP2836WE1 TSOP2838WE1 TSOP2856WE1 fo 30 kHz 36 kHz 38 kHz 56 kHz Type TSOP2833WE1 TSOP2837WE1 TSOP2840WE1 fo 33 kHz

Contextual Info: TSOP28.WE1 Vishay Semiconductors Photo Modules for PCM Remote Control Systems Available types for different carrier frequencies Type TSOP2830WE1 TSOP2836WE1 TSOP2838WE1 TSOP2856WE1 fo 30 kHz 36 kHz 38 kHz 56 kHz Type TSOP2833WE1 TSOP2837WE1 TSOP2840WE1 fo

add 5201

Abstract: ESCC 5201-002 SOC2222A 520100204 SOC2222ASW package LCC-3 escc 5201-002-05 smd marking codes list ESCC 5201/002 2N2222AHR
Contextual Info: 2N2222AHR Hi-Rel NPN bipolar transistor 40 V - 0.8 A Features BVCEO 40 V IC max 0.8 A hFE at 10 V - 150 mA > 100 Operating temperature range - 65 °C to + 200 °C 1 2 3 TO-18 3 3 4 • Linear gain characteristics 1 1 2 2 ■ Hermetic packages ■ ESCC qualified

Contextual Info: TSOP28.WE1 Vishay Telefunken Photo Modules for PCM Remote Control Systems Available types for different carrier frequencies Type TSOP2830WE1 TSOP2836WE1 TSOP2838WE1 TSOP2856WE1 fo 30 kHz 36 kHz 38 kHz 56 kHz Type TSOP2833WE1 TSOP2837WE1 TSOP2840WE1 fo 33 kHz

IN1190A diode

Abstract: an 80771 hfa30pa60 SCR gate drive circuit A6F diode HFA120FA60 HF50A060 IN1190 DT93-1 HFA16PB120
Contextual Info: Revised 5/11/99 www.irf.com Rectifiers / Thyristors Catalog of Available Documents IR ProCenter Fax-On-Demand 310 252-7100 Standard Recovery Diodes Description Datasheets 1N1183 - IN1190 Series 1N1183A - IN1190A Series 1N1199A - 1N1206A Series 1N2054 thru 1N2068 Series

SOC2222ASW

Abstract: SOC2222A 2N2222AUB1 5201-002-05 ESCC 5201-002 SOC2222A smd smd marking codes list 2N2222AUB add 5201 520100204
Contextual Info: 2N2222AHR Hi-Rel NPN bipolar transistor 40 V - 0.8 A Features BVCEO 40 V IC max 0.8 A hFE at 10 V - 150 mA > 100 Operating temperature range - 65 °C to + 200 °C 1 2 3 TO-18 3 3 4 • Linear gain characteristics 1 1 2 ■ Hermetic packages ■ ESCC qualified

TSAL62

Abstract: TSAL6200 TSOP2830WE1 TSOP2833WE1 TSOP2836WE1 TSOP2837WE1 TSOP2838WE1 TSOP2840WE1 TSOP2856WE1
Contextual Info: TSOP28.WE1 Vishay Telefunken Photo Modules for PCM Remote Control Systems Available types for different carrier frequencies Type TSOP2830WE1 TSOP2836WE1 TSOP2838WE1 TSOP2856WE1 fo 30 kHz 36 kHz 38 kHz 56 kHz Type TSOP2833WE1 TSOP2837WE1 TSOP2840WE1 fo 33 kHz

7805CT

Abstract: MOC5010 ip1717 UA741CN op amp TL081P LM3524N LM13080N 7824ct LM7915CK LM7905CK
Contextual Info: Master Designer Version 8.5 Component Library Reference Volume 2 October 1995 All rights reserved. No part of this publication may be reproduced, stored in a retrieval system, or transmitted, in any form or by any means-electronic, mechanical, photocopying, recording, or otherwise-without the prior

0119 Solar Lamp Controller

Abstract: transistor SMD W06 78 NXP Semiconductors 70150 TYN225 WH1602A Matsua microswitch 250V AC IRF9520 Samsung iskra BT 200 MOTOR FM 270R 74HC00M
Contextual Info: 24 Electronic Components pp751-856:Layout 1 24/1/14 16:12 Page 751 Electronic Components CAPACITORS OPTOELECTRONICS Ceramic Capacitors Tantalum Capacitors Variable Capacitors 752 759 759 DISCRETE SEMICONDUCTORS Bridge Rectifier Diodes Diodes Transistors 766

209CmQ150

Abstract: K1760 408CMQ060 121NQ035 10BQ040 10BQ060 10BQ100 10TQ035S 10TQ045S 30BQ015
Contextual Info: Index International Rectifier Schottky Diodes I RM @ VRWM VFM@ I FM Part Num VRRM V I FAV@ T C (C) (A) 25°C (V) EAS (mJ) I AR 25°C (A) (mA) Max. T J (°C) Fax-on-Demand Notes Surface Mount SMB 10BQ100 10BQ015 10BQ040 10BQ060 100 15 40 60 1 1 1 1 152 78

Contextual Info: International IO R Rectifier Fast Recovery Diodes Fax on 1psM Part VRRM V Number * fav@ tc (A) (C) SO Hz (A) 60HI Vf* @ , f * R JC (A) (V) (A) (°C/W) •„ (nS) Notes Number Case Outline Key Discrete DO-205AB (DO-9) SD 2 0 3 N 0 4 SIO P V 400 200 85 4200

lcd interfacing with arm7 processor

Abstract: IR LED and photodiode
Contextual Info: CL-PS7111 Product Bulletin FEATURES • Ultra low power — Designed for applications that require long battery life while using standard AA/AAA batteries or rechargeable cells — Average 45 mW/66 mW in normal operation 2.7 V/3.3 V, 13 MHz/18.432 MHz — Average 15 mW in idle mode (clock to the CPU stopped,

Contextual Info: TSOP28.WE1 Vishay Telefunken Photo Modules for PCM Remote Control Systems Available types for different carrier frequencies Type TSOP2830WE1 TSOP2836WE1 TSOP2838WE1 TSOP2856WE1 fo 30 kHz 36 kHz 38 kHz 56 kHz Type TSOP2833WE1 TSOP2837WE1 TSOP2840WE1 fo 33 kHz

Contextual Info: Electrical Properties: Property RTG Resistance: RTT Resistance: Test Method ESD S7.1 ESD S7.1 Specifications: Value 10E9 - 10E10 Ohms 10E9 - 10E10 Ohms Construction: Electrical Properties obtained by testing to industrial standards by an independent testing laboratory @ 100 Volts and 50% relative humidity

HMXR-5001

Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Contextual Info: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog

ENN8206

Abstract: CPH5810 MCH3312
Contextual Info: CPH5810 Ordering number : ENN8206 CPH5810 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with an P-Channel Sillicon MOSFET MCH3312 and a Schottky Barrier Diode (SBS001)