2N5401UB Search Results
2N5401UB Price and Stock
STMicroelectronics DATAPACK/JANSR2N5401UBG- Bulk (Alt: DATAPACK/JANSR2N5401UBG) |
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DATAPACK/JANSR2N5401UBG | Bulk | 1 |
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STMicroelectronics SLDC-CHARGE/ JANSR2N5401UBT- Bulk (Alt: SLDC-CHARGE/ JANSR2N5401UBT) |
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STMicroelectronics 2N5401UB07- Bulk (Alt: 2N5401UB07) |
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2N5401UB07 | Bulk | 1 |
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STMicroelectronics DATAPACK/JANS2N5401UBT- Bulk (Alt: DATAPACK/JANS2N5401UBT) |
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DATAPACK/JANS2N5401UBT | Bulk | 1 |
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STMicroelectronics 2N5401UB1- Bulk (Alt: 2N5401UB1) |
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2N5401UB1 | Bulk | 29 Weeks, 1 Days | 25 |
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2N5401UB Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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2N5401UB06Contextual Info: 2N5401HR Hi-Rel PNP bipolar transistor 150 V, 0.5 A Datasheet — production data Features 3 BVCEO 150 V IC max 0.5 A 1 1 2 2 3 HFE at 10 V - 150 mA > 60 Operating temperature range -65°C to +200°C TO-18 LCC-3 3 • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics |
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2n5401hr2n5401ub06 | |
2n5401ubContextual Info: The documentation and process conversion measures necessary to comply with this document shall be completed by 26 February 2013. INCH-POUND MIL-PRF-19500/766 26 November 2012 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER, |
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mil-prf-19500/7662n5401ubmil-prf-19500 | |
2n5401 smd
Abstract: 2n5401ub SOC5401 SOC5401SW 2N5401UB1 TRANSISTOR SMD CODES SOC5401HRB escc 2n5401 transistor TRANSISTOR SMD MARKING CODES
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2n5401hr2n5401 smd2n5401ubsoc5401+7 | |
2n5551 smd
Abstract: 2N5551HR
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2n5551hr2n5551 smd | |
JANSR2N5401UB
Abstract: 2N5401UB06 J2N5401UB1
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2n5401hrmil-prf19500docid16934jansr2n5401ub+2 | |
2N5551UB
Abstract: package LCC-3
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2n5551hr2n5551ubpackage lcc-3 | |
2N5401HRContextual Info: 2N5401HR Hi-Rel PNP bipolar transistor 150 V, 0.5 A Datasheet — production data Features 3 BVCEO 150 V IC max 0.5 A 1 1 2 2 3 HFE at 10 V - 150 mA > 60 Operating temperature range -65°C to +200°C TO-18 LCC-3 3 • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics |
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2n5401hr | |
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Contextual Info: 2N5401HR Hi-Rel PNP bipolar transistor 150 V, 0.5 A Datasheet - production data Features 3 1 BVCEO 150 V IC max 0.5 A HFE at 10 V - 150 mA > 60 1 2 2 3 TO-18 LCC-3 3 • Hermetic packages • ESCC and JANS qualified 4 1 • Up to 100 krad(Si) low dose rate |
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2n5401hrmil-prf19500docid16934 | |
2N5401UB1Contextual Info: 2N5401HR Hi-Rel PNP bipolar transistor 150 V - 0.5 A Features 3 BVCEO 150 V IC max 0.5 A HFE at 10 V - 150 mA > 60 Operating temperature range -65°C to +200°C 1 1 2 2 3 TO-18 LCC-3 3 • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics ■ |
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2n5401hr2n5401ub1 | |
2N5551UB
Abstract: SOC5551 SOC5551SW 2n5551 smd 2N5551HR IC 5201/019/05 SOC5551SW 520101904 SOC5551HRB 2N5551UB1
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2n5551hr2n5551ubsoc5551soc5551sw+5 | |
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Contextual Info: 2N5551HR Hi-Rel NPN bipolar transistor 160 V - 0.5 A Features 3 BVCEO 160 V IC max 0.5 A HFE at 5 V - 10 mA > 80 Operating temperature range -65°C to +200°C • Linear gain characteristics ■ ESCC qualified ■ European preferred part list - EPPL ■ |
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2n5551hr |