80WATTS Search Results

FJP5200RTU

Abstract: J5200-R 2sc5200 amplifier circuit 2sc5200
Contextual Info: FJP5200 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • 1 High Current Capability: IC = 15A. High Power Dissipation : 80watts. High Fequency : 30MHz.

Contextual Info: FJP1943 PNP Epitaxial Silicon Transistor Applications • • High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: C I = -17A. High Power Dissipation : 80watts. High Frequency : 30MHz.

2sa1943 amplifier

Abstract: 2SA1962 hFE is transistor to220 to264 TO3P package FJP1943 FJP1943RTU FJP5200 FJPF1943
Contextual Info: FJP1943 PNP Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = -17A. High Power Dissipation : 80watts. High Frequency : 30MHz.

FJP1943

Abstract: FJP1943OTU FJP1943RTU FJP5200 FJPF1943
Contextual Info: FJP1943 PNP Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = -15A. High Power Dissipation : 80watts. High Frequency : 30MHz.

WRCJ01X-U

Abstract: AC230V WRCJ04X-U AC140V
Contextual Info: 80 WATT AC-DC CONVERTER WRCJ-00X Series 3 CHANNEL Model Specifications<AC/DC> WRCJ*X-U 80WATTS/3 OUTPUTS WRCJ01X-U WRCJ03X-U WRCJ04X-U WRCJ06X-U Input Characteristic Input Voltage AC115/230V Input Current 1.8A at AC115V/1.1A at AC230V Input Range AC85-132V/170-264V DC220-350V

radio mtbf

Contextual Info: Switch Mode Power Supply Medical Adapter AMD-24V080WxyA MODEL: AMD-24V080WxyA Features: •          80Watts Output Power. 100-240Vac Universal Input. AC Receptacle with C14 IEC320AC receptacle Efficiency > 87% No load power consumption

Contextual Info: FJP1943 PNP Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = -15A. High Power Dissipation : 80watts. High Fequency : 30MHz.

J5200

Abstract: 2sc5200 amplifier J5200-R 2SC5200 FJP5200RTU FJP5200OTU 2Sc5200 TRANSISTOR FJP1943 FJP5200 FJPF5200
Contextual Info: FJP5200 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • 1 High Current Capability: IC = 15A. High Power Dissipation : 80watts. High Frequency : 30MHz.

MJE13007

Contextual Info: SILICON PLASTIC POWER TRANSISTOR NPN MJE13007 .suited for 115 and 220 V switch-mode applications such as Switching Regulators,Inverters,Motor Controls, Solenoid/Relay 400VOLTS/80WATTS drivers and Deflection circuits. MAXIMUM RATINGS Rating TO-220 Symbol

Contextual Info: FJP1943 PNP Epitaxial Silicon Transistor Applications • • High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: C I = -15A. High Power Dissipation : 80watts. High Frequency : 30MHz.

2sc5200 amplifier

Abstract: J5200 2sc5200 amplifier circuit 2SC5200 TRANSISTOR FJP5200RTU spice model 2SC5200 J5200-R 2sc5200 amplifiers audio output TRANSISTOR NPN DATA SHEET TRANSISTOR 2SC5200
Contextual Info: FJP5200 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • 1 High Current Capability: IC = 17A. High Power Dissipation : 80watts. High Frequency : 30MHz.

F1022

Contextual Info: polyfet rf devices F1022 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

F1280

Contextual Info: polyfet rf devices F1280 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

Contextual Info: polyfet rf devices F1018 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

Contextual Info: LTCC QUADRATURE HYBRID COUPLERS DA T A S HE E T HPL3F 6.8.2010 FEATURES • • • • • • • • APPLICATIONS High Power Low Profile Surface Mount Package Very Low Insertion Loss Excellent Amplitude and Phase Balance High Isolation RoHS Tape and Reel for High Volume Production

Contextual Info: LTCC QUADRATURE HYBRID COUPLERS DA T A S HE E T HPM3F 2.25.2011 FEATURES • • • • • • • • APPLICATIONS High Power Low Profile Surface Mount Package Very Low Insertion Loss Excellent Amplitude and Phase Balance High Isolation RoHS Tape and Reel for High Volume Production

F1108

Contextual Info: polyfet rf devices F1108 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

Contextual Info: polyfet rf devices F1012 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

Contextual Info: polyfet rf devices F1022 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

F1012

Contextual Info: polyfet rf devices F1012 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

F1018

Contextual Info: polyfet rf devices F1018 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

Contextual Info: LTCC QUADRATURE HYBRID COUPLERS DA T A S HE E T HPI3F 6.23.2010 FEATURES • • • • • • • • APPLICATIONS High Power Low Profile Surface Mount Package Very Low Insertion Loss Excellent Amplitude and Phase Balance High Isolation RoHS Tape and Reel for High Volume Production

VLT80-1001

Abstract: VLT80-4002 VLT80 VLT80-4000 VLT80-4001 VLT80-1008 EN55022-B VLT80-4004 Molex-3 41749
Contextual Info: VLT80 Series 80W single and quad output AC/DC Power Supplies Features : An industry favorite at 80-watts with no fan! Power solutions for 1U height and smaller applications are made easy with the single and quad output versions of the venerable 5.0”x3.040x1.073” EOS VLT80

Contextual Info: Medical Medical Adapter 15W 25W 30W 65W 85W 90W 105W 135W 150W 180W 220W 400W 5V 9V 12V 15V 18V 19V 20V 24V 28V 30V 32V 36V 48V Available or in develpment FSP015 Series Wall Mount Model Watts Output Voltage Output Current Efficiency AC Socket Dimension(mm)