80N50 MOSFET Search Results

80N50 MOSFET Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TCK424G		Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G	Datasheet
TCK423G		Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G	Datasheet
TCK401G		Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing / Auto-discharge, WCSP6E	Datasheet
TCK420G		Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G	Datasheet
TCK425G		Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G	Datasheet

80N50 MOSFET Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
80n50 Abstract: 80N50 MOSFET Contextual Info: HiPerFETTM Power MOSFETs Single Die MOSFET IXFE 80N50 RDS on D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G Preliminary data sheet S Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	80N50 227TM 728B1 80n50 80N50 MOSFET	PDF
80n50 Abstract: 80N50 MOSFET 125OC IXFN80N50 Contextual Info: HiPerFETTM Power MOSFETs Single Die MOSFET VDSS ID25 RDS on trr IXFN 80N50 D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	80N50 100kHz 125OC 80n50 80N50 MOSFET 125OC IXFN80N50	PDF
80N50 MOSFET Contextual Info: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 80N50 IXFN 75N50 VDSS ID25 RDS on 500 V 500 V 80 A 75 A 50 mΩ 55 mΩ D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	80N50 75N50 75N50 80N50 OT-227 E153432 125OC 728B1 80N50 MOSFET	PDF
Contextual Info: HiPerFETTM Power MOSFETs Single Die MOSFET IXFE 80N50 VDSS ID25 RDS on = 500 V = 72 A Ω = 55 mΩ D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G Preliminary data sheet S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	80N50 227TM IXFN80N50 728B1	PDF
IXFN80N50 Abstract: 80n50 80N50 MOSFET IXYS IXFN80N50 Contextual Info: HiPerFETTM Power MOSFETs Single Die MOSFET IXFE 80N50 VDSS ID25 RDS on = 500 V = 72 A Ω = 55 mΩ D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G Preliminary data sheet S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	80N50 227TM IXFN80N50 728B1 80n50 80N50 MOSFET IXYS IXFN80N50	PDF
Contextual Info: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 80N50 G Preliminary data sheet S = 500 V = 80 A = 50 mW RDS on D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS ID25 S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500	Original	80N50 OT-227 E153432	PDF
80N50D Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 80N50 = 500 V = 80 A = 48 mW RDS on D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS ID25 G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	80N50 OT-227 E153432 80N50D	PDF
Contextual Info: HiPerFETTM Power MOSFETs Single Die MOSFET IXFE 80N50 VDSS ID25 RDS on = 500 V = 72 A Ω = 55 mΩ D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G Preliminary data sheet S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	80N50 227TM 728B1	PDF
Contextual Info: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 80N50 VDSS ID25 = 500 V = 80 A Ω = 50 mΩ RDS on D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	80N50 OT-227 E153432 125OC	PDF
Contextual Info: HiPerFETTM Power MOSFETs Single Die MOSFET VDSS ID25 RDS on trr IXFN 80N50 D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S Symbol Test Conditions S Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	80N50 100kHz 125OC	PDF
80n50 Abstract: 80N50 MOSFET IXFN SOT227 125OC 75N50 SNC80 Contextual Info: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 80N50 IXFN 75N50 VDSS ID25 RDS on 500 V 500 V 80 A 75 A 50 mΩ 55 mΩ D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	80N50 75N50 OT-227 E153432 125OC 728B1 80n50 80N50 MOSFET IXFN SOT227 125OC 75N50 SNC80	PDF
80N50 MOSFET Abstract: 80N50 75N50 SNC80 Contextual Info: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 80N50 IXFN 75N50 VDSS ID25 RDS on 500 V 500 V 80 A 75 A 50 mΩ 55 mΩ D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	80N50 75N50 OT-227 E153432 728B1 80N50 MOSFET 80N50 75N50 SNC80	PDF
80N50 Contextual Info: nixYs Advanced Technical Information HiPerFET Power MOSFETs Single Die MOSFET IXFN 80N50 V DSS 500 V 80 A 48 mQ I D25 RDS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions v DSS Tj =25°C to150°C 500 V VDGR Tj = 25° C to 150° C; RGS= 1 Mi2	OCR Scan	IXFN80N50 to150 OT-227 E153432 80N50	PDF
52N30 Abstract: 20n80 ixfh 60N60 IXFX 44N80 15n10 7n80 E51G 44N80 60n60 46N50 Contextual Info: HiPerFET Power MOSFETs LowGa>°-c,ar rypes- - s » F series - Avalanche ruggedness with Fast Intrinsic Diode p > Type *D(25 c r38 typ. V max. typ. max. max. fi PF PF ns nC K/W W E T jm = 150"C ► New V Tc = 25°C 76 0.011 4400 1200 100 240 0.42 360 70	OCR Scan	76N06-11 76N07-11 76N07-12 67N10 75N10 50N20 58N20 74N20 80N20 35N30 52N30 20n80 ixfh 60N60 IXFX 44N80 15n10 7n80 E51G 44N80 60n60 46N50	PDF