80DEG Search Results

10SVPS10M

Abstract: 16SVPS180M 6SVPS220M 10SVPS68M 10SVPS15M 10SVPS33M 16SVPS22M 16SVPS39M 20SVPS22M 4SVPS33M
Contextual Info: NEW Series Series '05 - 6 Aluminum solid capacitors with Conductive polymer Long life span : Endurance 5,000h at 105deg.C x RV * Lead free * Damp heat : 60deg.C x 90 to 95% x RV x 1,000h * Expected for 89,000h at 80deg.C SVPS Series Characteristics List

LS013B7DH01

Abstract: d143 T transistor Zebra stripe s TSSCS lcd tv parts Zebra stripe sharp TFT LCD tv driver LCP-2110019B Industrial Devices L168 V144H
Contextual Info: No. LCP-2110019B Date 16th Aug 2010 Technical Literature For TFT-LCD Module Model No. LS013B7DH01 Notice The technical Literature is subject to change without any prior notice for the purpose of product improvement. Please contact Sharp or its representative before designing

Contextual Info: Doc No. TA4-EA-06152 Revision. 2 Under Development Product Standards NN30421A http://www.semicon.panasonic.co.jp/en/ 8A Synchronous DC-DC Step down Regulator VIN = 4.75 V to 24 V, VOUT = 0.75 V to 3.6 V FEATURES DESCRIPTION  High-Speed Response DC-DC Step Down Regulator

KLC8

Abstract: EDEW
Contextual Info: LL03ED-CTxxL Lens for Color Mixing Datasheet For Edixeon Multi-Color and Single-Color LEDs Features: • High efficiency ■ Available in 2 beam Patterns ■ Optimized for color mixing effects ■ Lens alone Typical applications : ■ Stage Lighting ■ Street Lights

203PIN

Abstract: DDR3 sodimm socket
Contextual Info: THIS DRAWING IS UNPUBLISHED. 32 COPYRIGHT 2007 SEP ,2 0 0 7 . LOC REVISIONS J BY TYCO ELECTRONICS CORPORATION. LTR C1 RR R ± 0 . 0 5 REVISED DESCRIPTION DATE DWN APVD ECR—0 8 —01 9 0 4 7 30JU L2008 T.F K.l ± 0 .0 5 HOW TO MATE AND UNMATE 0 1 .5 M A T E :

100BASE-BX10

Abstract: neophotonics ITU-G957 112508 5-pin RX laser 15Km
Contextual Info: www.neophotonics.com VER A / 112508 PTB3539-3331-SC/PC + STM-1/100Base-Bx10 BiDi SFF Transceiver 1 Feature 1.1 Transceiver unit with 1550nm FP Laser diode transmitter 1310nm InGaAs PIN photodiode receiver 1.2 Complies with IEEE802.3ah 100Base-Bx10 and ITU-G.957

T68-52A

Abstract: AN9722 PO564 MBR140P JOLO SPCJ-123-01 Schottky Diode 75V 7A T38-52 capacitor ceramic 33pF mosfet T60 pentium 4 motherboard schematic diagram
Contextual Info: Switchmode DC-DC Converter Family Using HIP6006 and HIP6007 PWM Controller ICs Application Note August 1997 AN9761 Authors: Greg J. Miller, Bogdan M. Duduman Introduction Today’s high-performance microprocessors present many challenges to their power source. High power consumption,

Contextual Info: LED-CONVERTER UNIT PS-LD0301-085 S (PRELIMINARY INFORMATION) DESCRIPTION : This low profile LED converter is developed for max. 3 LED-lines Optimized for different NEC displays. APPLICABLE: 1~3 LED lines (Serial Mode) Pout max. 7W LED Voltage max. 33Vdc Lamp Current typ. 50mAdc

4202 BD TRANSISTOR

Abstract: lg 8993 f 4556 TRANSISTOR BD 137-10 C 5478 transistor 329 9148 f 9582 dc bd 8050 TRANSISTOR QFN 5853
Contextual Info: CDQ0303-QS 500 MHz to 6000 MHz Dual, Ultra Low-Noise, High IP3 Amplifier Advanced Product Information May 2005 V1.0 1 of 18 Features ❏ Matched Pair of Transistors for Optimum Ballanced Amplifier Design ❏ AlGaAs/InGaAs/AlGaAs pseudomorphic High Electron Mobility Transistor (pHEMT)

Contextual Info: GaAs MMICs GN01061B GaAs IC with built-in ferroelectric Low-noise amplifier for CDMA unit: mm +0.2 2.8 –0.3 +0.25 0.65±0.15 1 Symbol Gate control voltage VDD 8 V VAGC 0 to 3 V VICONT 0 to 3 V 20 mA Pin −5 dBm PD 200 mW Topr −30 to +90 °C Tstg −40 to +120

VD F1 SMD

Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0921A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0921A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=33dBm TYP. @f=1.9GHz,Pin=17dBm

SMM5845V1

Abstract: MMIC marking code U
Contextual Info: SMM5845V1B K-Band Power Amplifier MMIC FEATURES High Output Power: Pout=33.0dBm typ. High Linear Gain: GL=22.0dB (typ.) Broad Band:21.2 to 23.6GHz Impedance Matched Zin/Zout=50ohm Small Hermetic Metal-Ceramic SMT Package(V1B) DESCRIPTION The SMM5845V1B is a MMIC amplifier that contains a four-stage

Contextual Info: Specification: TS-S09D262A March, 2010 Preliminary SXP3102DA-Fxxx Rev. A February 10, 2010 Standard 1. INTRODUCTION This document is a preliminary specification for a single channel XFP MSA transceiver module. The transceiver shall be SDH STM DW100U-2A2C(F) compliant. The transceiver is a bi-directional device with a transmitter and receiver in a

MGF0951P

Contextual Info: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 25 th May. 2005 SUBJECT: RF characteristics data of MGF0951P for Freq.=2.5-2.7GHz band SUMMARY: This application note show the RF characteristics data of MGF0951P － － Sample history:

MGF0951P

Contextual Info: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 25 th May. 2005 SUBJECT: RF characteristics data of MGF0951P for Freq.=2.3-2.4GHz band SUMMARY: This application note show the RF characteristics data of MGF0951P － － Sample history:

c id

Abstract: 42AA MGF0952P
Contextual Info: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 8 th Dec. 2005 SUBJECT: RF characteristics data of MGF0952P for Freq.=2.3-2.4GHz band SUMMARY: This application note show the RF characteristics data of MGF0952P － － Sample history:

FET MARKING

Abstract: ELM5964-4PS ELM5964 Sumitomo elm5964 elm5964-4pst elm5964-4
Contextual Info: ELM5964-4PS C-Band Internally Matched FET FEATURES High Output Power: P1dB=36.0dBm Typ. High Gain: G1dB=11.5dB (Typ.) High PAE: ηadd=37% (Typ.) Frequency Band: 5.9~6.4GHz Internally matched Plastic Package for SMT applications DESCRIPTION The ELM5964-4PS is a power GaAs FET that is internally matched for

elm7179

Abstract: ELM7179-4PS sumit
Contextual Info: ELM7179-4PS C-Band Internally Matched FET FEATURES High Output Power: P1dB=36.0dBm Typ. High Gain: G1dB=10.5dB (Typ.) High PAE: ηadd=35% (Typ.) Broad Band: 7.1~7.9GHz Internally matched Plastic Package for SMT applications DESCRIPTION The ELM7179-4PS is a power GaAs FET that is internally matched for

Power Amplifier MMIC

Abstract: SMM5845V1B SMM5845V1 330-DB
Contextual Info: SMM5845V1B K-Band Power Amplifier MMIC FEATURES ・High Output Power: Pout=33.0dBm typ. ・High Linear Gain: GL=22.0dB (typ.) ・Broad Band:21.2 to 23.6GHz ・Impedance Matched Zin/Zout=50W ・Small Hermetic Metal-Ceramic SMT Package(V1B) DESCRIPTION The SMM5845V1B is a MMIC amplifier that contains a four-stage

Contextual Info: Specification: TS-S04D087A July, 2004 SDG1203 Series OC-48 Optical Transceiver with Mux / Demux 16x155.52Mbps Features ! ! ! ! ! ! ! ! ! 2.488Gbps High Speed Optical I/F SONET / SDH Compliant 155.52Mbps LVPECL I/F Pigtailed Compact Package Single +3.3V Operation

MT48LC16M16A2-75

Abstract: u28 hall ic 74244 74244 ic MT28S4M16LC-10 function pin configuration ic 74244 74244 permittivity FR 4 MC9328MX1 182PF
Contextual Info: Freescale Semiconductor, Inc. Application Note AN2536/D Rev. 0, 07/2003 MC9328MX1/MXL HighSpeed Layout Design Guidelines Freescale Semiconductor, Inc. Contents 1 Introduction . . . . . . . . . 1 2 Design consideration . . 1 2.1 Board material effect . . 1

Ct215

Contextual Info: COMPONENTS PRODUCT INFORMATION NEW Connector for Internal Serial Transmission CONNECTOR MB-0153-4 June 2013 FI-R Series RoHS Compliant High-speed serial transmission such as LVDS, TMDS HDMI , and PCI Express are widely used in applications in a variety of markets including the personal computer,

60Ghz

Abstract: MGF0915A a4013
Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=36.5 dBm TYP. @f=1.9GHz,Pin=23dBm

Contextual Info: 4 3 T H IS D R A W IN G IS U N P U B L IS H E D . COPYRIGHT RELEASED BY TYCO ELECTRONICS CORPORATION. 2001 FOR P U B L IC A T IO N 2 2001- LOC 1 D IS T REVISIONS A A L L R IG H T S R E S E R V E D . D E S C R IP TIO N K A DWN REVISED ECR —06 —02523' APVD