800MI Search Results

2SC4299

Contextual Info: 2SC4299 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor Unit VCB=800V 100max µA VCEO 800 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 800min V 3(Pulse6) A hFE VCE=4V, IC=1A 10 to 30 IB 1.5 A VCE(sat) IC=1A, IB=0.2A 0.5max

2SC3679

Contextual Info: 2SC3679 Silicon NPN Triple Diffused Planar Transistor High Voltage Switching Transistor 5(Pulse10) A µA 800min V hFE VCE=4V, IC=2A 10 to 30 19.9±0.3 IC VEB=7V IC=10mA 2.5 A VCE(sat) IC=2A, IB=0.4A 0.5max PC 100(Tc=25°C) W VBE(sat) IC=2A, IB=0.4A 1.2max

2SC4020

Abstract: 2SC4020 equivalent
Contextual Info: 2SC4020 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor VEBO 7 V V(BR)CEO 3(Pulse 6) A hFE IC µA VEB=7V 100max µA IC=10mA 800min V VCE=4V, IC=0.7A 10 to 30 IB 1.5 A VCE(sat) IC=0.7A, IB=0.14A 0.5max PC 50(Tc=25°C) W VBE(sat)

Ib22

Contextual Info: 2SC4020 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor µA V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 800min V 3(Pulse 6) A hFE VCE=4V, IC=0.7A 10 to 30 VEBO IB 1.5 A VCE(sat) IC=0.7A, IB=0.14A 0.5max PC 50(Tc=25°C) W

2SC4304

Abstract: FM20 DSA0016509
Contextual Info: 2SC4304 Silicon NPN Triple Diffused Planar Transistor High Voltage High Speed Switchihg Transistor hFE µA 800min V VCE=4V, IC=0.7A 10 to 30 IB 1.5 A VCE(sat) IC=0.7A, IB=0.14A 0.5max PC 35(Tc=25°C) W VBE(sat) IC=0.7A, IB=0.14A 1.2max V Tj 150 °C fT VCE=12V, IE=–0.3A

2SC4445

Abstract: transistor case To 106
Contextual Info: 2SC4445 Application : Switching Regulator and General Purpose Unit VCB=800V 100max µA VCEO 800 V IEBO VEB=7V 100max µA 7 V V BR CEO V 3(Pulse6) A hFE IC=10mA 800min VCE=4V, IC=0.7A 10 to 30 IB 1.5 A VCE(sat) IC=0.7A, IB=0.14A 0.5max PC 60(Tc=25°C) W VBE(sat)

2SC4300

Contextual Info: 2SC4300 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 800min V 5(Pulse10) A hFE VCE=4V, IC=2A 10 to 30 IB 2.5 A VCE(sat) IC=2A, IB=0.4A 0.5max PC 75(Tc=25°C) W VBE(sat) IC=2A, IB=0.4A

2SC4299

Contextual Info: 2SC4299 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor Unit VCB=800V 100max µA VCEO 800 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 800min V 3(Pulse6) A hFE VCE=4V, IC=1A 10 to 30 IB 1.5 A VCE(sat) IC=1A, IB=0.2A 0.5max

2SC4301

Contextual Info: 2SC4301 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor Application : Switching Regulator, Lighting Inverter and General Purpose Unit VCB=800V 100max µA VCEO 800 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 800min V 7(Pulse14)

2SC3679

Contextual Info: 2SC3679 Silicon NPN Triple Diffused Planar Transistor High Voltage Switching Transistor IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 800min V 5(Pulse10) A hFE VCE=4V, IC=2A 10 to 30 2.5 A VCE(sat) IC=2A, IB=0.4A 0.5max PC 100(Tc=25°C) W VBE(sat) IC=2A, IB=0.4A

Contextual Info: 2SC4908 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor VCEO 800 V IEBO VEBO 7 V V(BR)CEO 3(Pulse6) A hFE IC Symbol Conditions Ratings Unit VCB=800V 100max µA VEB=7V 100max µA IC=10mA 800min V VCE=4V, IC=0.7A 10 to 30 10.1±0.2

2SC4300

Contextual Info: 2SC4300 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 800min V 5(Pulse10) A hFE VCE=4V, IC=2A 10 to 30 IB 2.5 A VCE(sat) IC=2A, IB=0.4A 0.5max PC 75(Tc=25°C) W VBE(sat) IC=2A, IB=0.4A

2SC4301

Contextual Info: 2SC4301 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor Application : Switching Regulator, Lighting Inverter and General Purpose Unit VCB=800V 100max µA VCEO 800 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 800min V 7(Pulse14)

2SC4908

Abstract: FM20
Contextual Info: 2SC4908 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor VCEO 800 V IEBO VEBO 7 V V(BR)CEO 3(Pulse6) A hFE IC Symbol Conditions 2SC4908 Unit VCB=800V 100max µA VEB=7V 100max µA IC=10mA 800min V VCE=4V, IC=0.7A 10 to 30 10.1±0.2

2SC4304

Abstract: FM20
Contextual Info: 2SC4304 Silicon NPN Triple Diffused Planar Transistor High Voltage High Speed Switchihg Transistor hFE µA 800min V VCE=4V, IC=0.7A 10 to 30 IB 1.5 A VCE(sat) IC=0.7A, IB=0.14A 0.5max PC 35(Tc=25°C) W VBE(sat) IC=0.7A, IB=0.14A 1.2max V Tj 150 °C fT VCE=12V, IE=–0.3A

2SC4445

Contextual Info: 2SC4445 Application : Switching Regulator and General Purpose Conditions 2SC4445 Unit V ICBO VCB=800V 100max µA VCEO 800 V IEBO VEB=7V 100max µA 7 V V BR CEO IC=10mA 800min V 3(Pulse6) A hFE VCE=4V, IC=0.7A 10 to 30 IB 1.5 A VCE(sat) IC=0.7A, IB=0.14A 0.5max

2SC3680

Contextual Info: 2SC3680 Silicon NPN Triple Diffused Planar Transistor High Voltage Switching Transistor V IEBO VEB=7V 100max µA V V V(BR)CEO IC=10mA 800min 7(Pulse14) A hFE VCE=4V, IC=3A 10 to 30 IB 3.5 A VCE(sat) IC=3A, IB=0.6A 0.5max PC 120(Tc=25°C) W VBE(sat) IC=3A, IB=0.6A

Contextual Info: 2SC3678 Silicon NPN Triple Diffused Planar Transistor High Voltage Switching Transistor µA V IEBO VEB=7V 100max µA V 7 V V(BR)CEO IC=10mA 800min IC 3(Pulse6) A hFE VCE=4V, IC=1A 10 to 30 IB 1.5 A VCE(sat) IC=1A, IB=0.2A 0.5max PC 80(Tc=25°C) W VBE(sat)

2SC3678

Contextual Info: 2SC3678 Silicon NPN Triple Diffused Planar Transistor High Voltage Switching Transistor µA V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 800min V 3(Pulse6) A hFE VCE=4V, IC=1A 10 to 30 IB 1.5 A VCE(sat) IC=1A, IB=0.2A 0.5max PC 80(Tc=25°C) W VBE(sat) IC=1A, IB=0.2A

NEW TECH

Abstract: WESCOM Marketing ITT ste ASCOM
Contextual Info: SIERRA SEMICONDUCTOR NORTH AMERICAN SALES OFFICES Corporate Headquarters SIERRA SEMICONDUCTOR 2075 No. Capitol Ave. San Jose, CA 95132 PH: 408-263-9300 FAX: 408-263-3337 Northwest Regional Office Same as Headquarters N. Central Regional Office SIERRA SEMICONDUCTOR

ICX024BL

Abstract: icx024 SUN POSITION SENSOR CM500S ICX083AL
Contextual Info: ICX083AL Diagonal 11mm Type 2/3 CCD Image Sensor for CCIR Black-and-White Video Cameras Description The ICX083AL is an interline CCD solid-state image sensor suitable for CCIR black-and-white video cameras with a diagonal 11mm (Type 2/3) system. High sensitivity and low dark current are achieved

tCLCL-15

Contextual Info: Standard Products UT69RH051 Radiation-Hardened MicroController Data Sheet Nov. 1997 FEATURES q Three 16-bit timer/counters - High speed output - Compare/capture - Pulse width modulator - Watchdog timer capabilities q Flexible clock operation - 1Hz to 20MHz with external clock

54XX

Abstract: 80C31 RTMP CRH-2-9-97 UTMC Microelectronic Systems
Contextual Info: Semicustom Products UT0.35 CR Commercial RadHardTM Gate Array Family Advanced Information Sheet Sept. 1997 FEATURES PRODUCT DESCRIPTION q Up to 1,000,000 usable equivalent gates The high-performance UT0.35 CRH gate array family features densities up to 1,000,000 equivalent gates and is available in MIL-PRF-38535 QML Q and quality levels and is

UTMC Microelectronic Systems

Contextual Info: Semicustom Products UTMC Mentor Graphics Design System Fact Sheet June 1997 Design Idea Schematic Entry Convert an FPGA Translate an External Design Synthesis UTMC Mentor Design System Design Manufacturing Overview of the Design System Advantages The UTMC Mentor Graphics Design System provides