7RL4142 Search Results

KM416C1200AJ

Abstract: ra57
Contextual Info: DRAM MODULE KMM5321200AW/AWG KMM5321200AW/AWG Fast Page Mode 1Mx32 DRAM SIMM, 1K Refresh, 5V, using 1Mx16 DRAM G EN ER AL DESCRIPTION FEATURES The Samsung KMM5321200AW is a 1M bit x 32 Dynam ic RAM high density m em ory module. The • Part Identification

Contextual Info: KM44V1000DJ CMOS D R A M ELECTRONICS 1 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access

BM125

Contextual Info: SMF-03300 ELECTRO NICS Sam sung M icrow ave Sem iconductor Gain Optimized Low Current G aAs FET 2-20 GHz Description Features The S M F-03300 is a 300 p.m n-channel M E S F E T with 0.5 |xm gate length, utilizing Sam sung M icrowave’s gain/low current optimized G 30 process. Ti/Pt/Au gate metallization

KM416S4030A

Abstract: km416s4031 KM416S4030AT-G
Contextual Info: K M 4 16 S 4 0 3 1 AT SDRAM ELECTRONICS 1 M x 16Bitx 4 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply. • LVTTL/SSTL_3 Class II compatible with multiplexed address. • 4 banks operation. • MRS cycle with address key programs.

asea EH 9-10

Abstract: J 6920 A ite 8892 7420 pin configuration st 9318 KS8805BD 7809 A PI 505 7809 ct 8500-29 B KS8805B
Contextual Info: KS8805B UNIVERSAL PROGRAMMABLE PLL INTRODUCTION 1S-DIP-300A The KS8805B is a superior low power-programmable dual frequency synthesizer PLL which can be used in high performance CT-1 cord­ less phone system with frequency range under 60 MHz in ail over the

pin diagram priority encoder 74145

Abstract: 37-c4 NTSC/PAL TO RGB565 samsung y2 capacitor CCIR601 KS0119 KS0122
Contextual Info: KS0122 Multimedia ELECTRONICS MULTISTANDARD VIDEO DECODER Th e KS0122 converts analog N TSC or PAL video in composite or S-video format to digitized component video. Output data can be selected for C C IR 601 or square pixel sample rates in either Y U V or

Contextual Info: KM44C16100AK CMOS D R A M ELECTR O NICS 1 6 Mx 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Access time -5, -6, or -7 , package type(SOJ or

96-Seg

Contextual Info: KS57C2408 4-BIT CMOS Microcontroller ELECTRONICS Product Specification OVERVIEW The KS57C2408 single-chip CMOS microcontroller is designed for very high performance using Samsung's newest 4-bit product development approach, SAM4 Samsung Arrangeable Microcontrollers . Its main features

Contextual Info: SAMSUNG ELECTRONICS INC bME D KM416C256/L/SL • 7^4142 DD1343Q Q24 I SHGK CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C256/USL is a CMOS high speed 262,144 bit x 16 Dynamic Random Access Memory. Its

Contextual Info: KS57C0002 4-BIT CMOS Microcontroller ELECTRONICS Product Specification 2 OVERVIEW The KS57C0002 single-chip CMOS microcontroller is designed for high-performance using Samsung's newest 4-bit CPU core. With a four-channel comparator, eight LED direct drive pins, serial I/O interface, and a versatile

Contextual Info: KM4 8 C 124DJ CMOS DRAM ELECTRONICS 128K x 8 Bit CM OS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 131,072x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Access time 55, 60, or 70 and power consumption

KA7905

Abstract: 1N400I KA79XX KA7912 FC53 ka7905 regulator
Contextual Info: KA79XX C l C f* ELECTRONICS Industrial 3-TERM INAL 1A NEGATIVE V O LTA G E REG U LA TO RS Th e KA79XX se rie s of three-terminal negative regulators are available in TO -220 package and with several fixed output voltages, making them useful in a wide range of applications. E ach type em ploys internal current limiting,

KM416C1200AJ

Contextual Info: DRAM MODULE KMM5321200AW/AWG KMM5321200AW/AWG Fast Page Mode 1Mx32 DRAM SIMM, 1K Refresh, 5V, using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5321200AW is a 1M bit x 32 Dynam ic RAM high density m em ory module. The Samsung KM M 5321200AW consists of tw o CMOS

Contextual Info: LINEAR INTEGRATED CIRCUIT KA2810 VCM + SPM DRIVER for 3.5 Inch HDD The KA2810 is one chip IC designed to drive Spindle Motor SPM and Voice Coil Motor(VCM) in 3.5 inch Hard Disk Driver (HDD). The Analog Servo Control function can be performed well by built-in High-speed OPAmp and Comparators.

Contextual Info: KM48V512B/BL/BLL CMOS DRAM 51 2 K x8 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range: tR A C tC A C tR C KM48V512B/BI7BLL-6 60ns 15ns 110ns KM48V512B/BL/BLL-7 70ns 20ns 130ns KM48V512B/BL/BLL-8 80ns 20ns 150ns •

KM44S4020AT

Abstract: 71142 a
Contextual Info: KM44S4020AT SDRAM 2M x 4Bit x 2 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply. • LVTTL compatible with multiplexed address. • Dual Bank. • MRS cycle with address key programs. -. CAS Latency 1, 2, 3 -. Burst Length {1, 2, 4, 8 & Full page)

Contextual Info: LINEAR INTEGRATED CIRCUIT KA8601C VOICE SWITCHED SPEAKER PHONE WITH SPEECH NETWORK The KA8601C is a monolithic integrated circuit for use in high perfor­ mance speaker phone system. The KA8601C consist of speaker phone and speech network. Speaker phone includes attenuators, amplifiers, level detectors, attenuator

Contextual Info: KMM5322100BKU DRAM Module ELECTRONICS KMM53221OOBKU/BKUG Fast Page Mode 2Mx32 DRAM SIMM, 5V, 2K Refresh, using 2Mx8 DRAM FEATURES GENERAL DESCRIPTION • Part Identification The Samsung KMM5322100BKU is a 2M bit x 32 - KMM5322100BKU 2048 cycles/32 ms Ref, SOJ, Solder

Contextual Info: PRELIMINARY KM732V599A/L 32Kx32 Synchronous SRAM 32K x 3 2 - Bit Synchronous Pipelined Burst SRAM FEATURES GENERAL DESCRIPTION • • • • • • • • • • • T he K M 7 32 V 5 99 A /L is a 1 ,0 4 8 ,5 7 6 -b it Synchronous S ta tic R and o m A c c e s s M em ory d es ig n e d fo r high

KM48S8030AT

Abstract: REF04 KM48S8020AT
Contextual Info: KM48S8020AT SDRAM ELECTRONICS 4M x 8Bit x 2 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply. • LVTTL/SSTL_3 Class II compatible with multiplexed address. • Dual banks operation. • MRS cycle with address key programs.

Z359

Abstract: rb414 7-it4142
Contextual Info: KM 29V 3 2 00 0 T S Flash ELEC TRO NIC S 4M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 4M +128K Dit x 8bit The KM29V32000TS/RS is a 4M(4,194,304)xB bit NAND Flash memory with a spare 128K(131,072)x8 bit. Its NAND