7RB414E Search Results
7RB414E Datasheets Context Search
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Contextual Info: SAMSUNG ELECTRONICS INC b?E D WË 7 T b 4 m 2 D017bm KM611001 330 • SnGK CMOS SRAM 1MX1 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35ns max. • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS) : 2mA (max.) |
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d017bmkm611001km611001p/j-20130ma+6 | |
C1204B
Abstract: t2g memory
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km416c1204bj16bitc1204bt2g memory | |
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Contextual Info: KM44C16104AK CMOS DRAM ELECTRONICS 1 6 M x 4 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Access time -5, -6, or -7 , |
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km44c16104ak16mx4512kx87rb414e+2 | |
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Contextual Info: K M 4 16 C 2 5 6 D J ELECTRONICS CMOS DRAM 256K X 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time |
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256kx1616c256dj40sojkm416c256dj+1 | |
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Contextual Info: KMM37 2 V 4 0 0 B K D R A M Mo d u l e ELECTRO NICS KMM372V400BK/BS / KMM372V41OBK/BS Fast Page Mode 4Mx72 DRAM DIMM with ECC, 4K & 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES • Part Identification The Samsung KMM372V40 1 0B is a 4M bit x 72 Dynamic RAM high density memory module. The |
OCR Scan |
kmm37kmm372v400bk/bskmm372v41obk/bs4mx72+5 | |
TS 4142
Abstract: FS2J SCO-101 SF 129 C D037 KS7301B Camera AF microcontroller lrj b3 SSD controller IC
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ks7301b16bit160-qfp-2424sadr32+12 | |
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Contextual Info: R r e fi^ in & r / KM6161002B/BL, KM6161002BI/BLI CMOS SRAM 6 4 K x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION Fast Access Time 8,10,12*‘ Max. •• Low Power Dissipation The KM6161002B/BL is a 1,048,576-bit high-speed Static Ran |
OCR Scan |
km6161002b/blkm6161002bi/bli576-bit003bl74+2 | |
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Contextual Info: SAMSUNG ELECTRONICS INC b7E D • ?Tbm42 KM41V4000BLL GGlS7fi4 ÔE2 CMOS DRAM 4M x 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41V4000BLL is a high speed CMOS 4,194,304 bit x 1 Dynamic Random Access Memory. Its |
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tbm42km41v4000bllkm41v4000bll-7130ns+5 | |
LNK5000
Abstract: SDE5000
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ssp5000lnk5000sde5000 |