D037 Search Results

EL50P

Abstract: CD45278 CD4528 15-V CD4527B c32h
Contextual Info: HARRIS rarj rÿ i S E M I C O N D SE C T O R B 43D5271 D037blS 7 HARRIS CMOS BCD Rate Multiplier H ig h -V o ltag e T y p e s {20 *V olt Rating • C D 4 5 2 7 B is a lo w p o w e r 4 -b it d ig i­ tal rate m u ltip lie r th a t p ro vid e s an o u tp u tpulse rate w h ic h is the c lo c k in p u t-p u ls e rate

Contextual Info: 52E D H = 7 *7fn • 7=^237 S C S -1 H O M S O N L' Iiu r a m « D037Sbb OTT ■ SGTH s fi ^ hohson M 27C512 CMOS 512K 64K x 8 UV EPROM and OTP ROM ■ VERY FAST ACCESS TIME: 80ns ■ COMPATIBLE WITH HIGH SPEED MICRO­ PROCESSORS, ZERO WAIT STATE ■ LOW POWER “CMOS” CONSUMPTION:

Contextual Info: b2E » • N E C b427525 D037b4ci b72 W N E C E PHOTO DIODE ELECTRONICS INC / NDL5200 OPTICAL FIBER C O M M U N IC A TIO N S Ge PHOTO DIODE DESC R IPT IO N N D L 5 2 0 0 Germ anium Photo diode is designed for a detector o f long wavelength fiber transm ission systems.

633sb

Contextual Info: fl235bOS D037b47 7 SIEG □ M K T Capacitors SIEMENS A KT IE N G E S E L L S C H A F M7E D B 32520 .B 32529 ft~ O S l7-o M etalized polyester film capacitors in accordance w ith D IN 44112 VR = 6 3 to 6 3 0 Vdc W ith quality a sse ssm e n t according to C E C C 30401-043, edition 1, June 1983.

m8334

Contextual Info: fl235bOS D037b47 7 SIEG M K T Capacitors □ SIEMENS A K T I E N G E S E L L S C H A F M7E D B 32520 .B 3 2 5 2 9 ft~OS l7-o M etalized polyester film capacitors in accordance w ith D IN 44112 VR = 6 3 to 6 3 0 Vdc W ith quality a sse ssm e n t according to C E C C 30401-043, edition 1, June 1983.

2N4381

Abstract: PN4342 2N5021 "P-Channel JFETs" 2N3331 2N3820 2n5462 PN4360 T-39-01
Contextual Info: NATL SEMICOND DISCRETE HE » | ^501130 D03711Ü 1 | "I P-Channel JFETs CL * T-39-01 II o o o o o o o o o o o o iiiii 8 o o o o o cm IS §§888 m co £ £ o o o o o o O O O O O O o iflio in io u m m w o o o TT7TT7 777777 o|~ Ç - * o^sS ifllflÖOOO 1 1 I I I I

cd45148

Abstract: CD4514B CD4515B MC14515 gd451 mc14514 15-V transistor T-67
Contextual Info: HARRIS SEMICOND SECTOR MME ]> m M302 271 D037SÛE 7 ^ 6 - r - z 7 'M A S f - Z f CD4514B, CD4515B Types ¡J3 H A R R IS CMOS 4-Bit Latch/4-to-16 Line Decoders Features: Strobed input latch Inh ib it control 100% tested for quiescent current at 20 V Maximum input current o f 1 ¿iA at 18 V

Contextual Info: HITACHI/ NCU/MPU blE D • L4 ^ b 2 0 4 D0372fl4 BflM B I H I T 3 HITACHI 14 H8/300 FAM H8/311 (*3) H8/322 H8/323 H 8/324 H8/325 H8/326 ROM 10K 8K 16K 24K 32K 8K RAM 256B 256B 512B IK IK 256B EEPRO M 8K - - - - - D u al P o rt R A M - - - - - - E P R O M D e v ic e

Siemens MKT

Contextual Info: fl235bOS D037b47 7 SIEG □ MKT Capacitors SIEMENS AKTIENGESELLSCHAF M7E D B 32520 .B 32529 ft~ O S l7-o Metalized polyester film capacitors in accordance w ith DIN 44112 VR = 63 to 630 Vdc With quality assessment according to CECC 30401-043, edition 1, June 1983.

crystal HCJ

Abstract: cd4521 crystal hcj 30 HCJ crystal HCJ-24 CD4521B CD4521B* "HARRIS" CD4521B* HARRIS
Contextual Info: HARRIS SEtlICOND SECTOR 44E I> BB 4302271 D037b01 T 2 ] - ¿ 7 ŒHAS f 5 ' Z 3 - n CD4521B Types H A R R I S C M O S 24-Stage F re q u e n cy D ivider FU N CTIO N A L DIAGRAM H ig h -V o lta g e T y p e s 20-Volt R ating Features: • R e s e t d is a b le s the R C o s c illa to r fo r low p o w e r s ta n d b y co n d itio n

Contextual Info: Flow sensor Immersion sensor with integrated processor FCS-G1/2A4P-LIX-H1141/D037 • Flow sensor for liquid media ■ Calorimetric principle ■ Adjustment via potentiometer ■ LED band ■ 3-wire DC, 21…26 VDC ■ 4…20 mA analog output ■ Plug-in device, M12 x 1

SILICON SMALL-SIGNAL DICE

Contextual Info: MOTOROLA SC {D IO DES /OPTO} 34 SILICON SMALL-SIGNAL TRANSISTOR DICE continued D I b3fc725S D037TÌD 34C 37990 T- 3 7 " ( S ' 2C3762 DIE NO. — PNP LINE SOURCE — DSL60 This die provides performance similar to that of the following device types: (SÌ 2N3762

CD40218

Abstract: CD40210 CD4021B 4021B 0g3735
Contextual Info: HARRIS SEMÏCON] SECTOR MME- » • M3GE571 D0373Sb T H H A S 09-05 CM OS 8-Stage Static Shift Registers High-Voltage Types 20-Volt Bating) CD4014B: Synchronous Parallel or Serial Input/Serial Output CD4021B: Asynchronous Parallel Input or Synchronous Serial Input/Serial Output

DAC 0804

Abstract: 4 bit dac 0804 philips 3312 CP DAC 0808 pin configuration 0808 DAC analog to digital converters 0808 IEC134 TDA8772 TDA8772G-35 TDA8772G-85
Contextual Info: Philips Semiconductors Objective specification r - s i - o c\ - o % Triple 8-bit video digital-to-analog converter PHILIPS INTERNATIONAL FEATURES TDA8772 SbE ]> 7110ÖBL D037251 löT MPHIN APPLICATIONS GENERAL DESCRIPTION General purpose high-speed digital-to-analog conversion

B6103

Abstract: B6102
Contextual Info: fl235bOS D037b47 7 S IE G M K T Capacitors □ SIEMENS A K T I E N G E S E L L S C H A F M7E D B 32520 .B 3 2 5 2 9 ft~OS l7-o M etalized polyester film capacitors in accordance w ith D IN 44112 VR = 6 3 to 6 3 0 Vdc W ith quality a sse ssm e n t according to C E C C 30401-043, edition 1, June 1983.

DIODE T53

Abstract: NDL4103A b427525 NDL4103 T53 diode
Contextual Info: INECE b42?525 D037MbS TS3 L2E D LIGHT EMITTING DIODE N E C NDL4103A ELECTRONICS INC 8 5 0 nm O PTIC AL FIBER C O M M U N IC A T IO N S AIGaAs LIGHT EMITTING DIODE DESCRIPTION NDL4103A is an AIGaAs double heterostructure light emitting diode, especially designed for a light source fo r optical fiber

TIS90

Abstract: MPS6566 TIS97
Contextual Info: NATL SEMICOND DISCRETE 22E D • bS01130 D03777M 7 ■ NPN General Purpose Transistors by Ascending Vceo (continued) • H,e Ft (MHz) Min Vceo (V) VCbo(V) Min Min Min Max (mA/V) PN5816 TIS90 TIS92 TIS97 TN2218A TN2219A 40 40 40 40 40 40 50 40 40 100 100

2N2210

Abstract: TIS92 TN2218A transistor 2N2210 2N3827 PN3694 TIS90 2N2270 2N2586 2N5962
Contextual Info: NATL SEMICOND DISCRETE 5SE D • bS01130 D037774 7 ■ NPN General Purpose Transistors by Ascending Vceo (continued) Vceo(V) Vcbo (V) Min Min Min Max (mA/V) PN5816 TIS90 TIS92 TIS97 TN2218A TN2219A 40 40 40 40 40 40 50 40 40 100 100 100 250 40 100 200 300

C6104

Abstract: C3684 c1474 C3104
Contextual Info: fl235bOS D037b47 7 M K T Capacitors S IE G □ SIEMENS A KT IE N G E S E L L S C H A F M7E D B 32520 .B 3 2 5 2 9 ft~ O S l 7 - o M etalized polyester film capacitors in accordance w ith D IN 44112 VR = 6 3 to 6 3 0 Vdc W ith quality a sse ssm e n t according to C E C C 30401-043, edition 1, June 1983.

MJ3029

Abstract: MJ3011 MJ7261 MJ9000 2N3902 MJ3010 MJ411 2N5157 2N6307 Motorola MJ-43
Contextual Info: MOTOROL A SC {D IODES/OPT O} 6367255 3M MOTOROLA SC DE |t.3b?5S5 D037TSS CDIODES/OPTO 34C SILICON POWER TRANSISTOR DICE continued) 37955 T '3 3 2C6545 DIE NO. — NPN LINE SOURCE — PL500.366 This die provides performance equal to or better than that of

2269H

Contextual Info: TOSHIBA THMY7216C1EG-80H TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7216C1EG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408FT DRAMs and an unbuffer on a printed circuit board.

Contextual Info: IN STR t5 -COPTO} DlfJû'ifcilTSb 8961726 TEXAS INSTR COPTO 0G37D27 . 62C 37027 7"-33-/3 TIPL753, TIPL753A N-P-N SILICON POWER TRANSISTORS 1982 - REVISED OCTOBER 1984

TCK-1000

Abstract: D038 toshiba M7
Contextual Info: TO SH IBA THM Y6480F1 BEG-80 TEN TA TIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388, 6 O8-W O RD B Y 64-BIT SYN CH R O N O U S DRAM M ODULE D ESCRIPTIO N The THMY6480F1BEG is a 8,388,608-word by 64-bit synchronous dynamic RAM module consisting of eight TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.

18f24k22

Abstract: PIC18f45k22 example C18 codes pic18F26K22 example C codes pic18F44K22 PIC18F45K22 PIC18f46k22 example C18 codes i2c pin diagram of PIC18f45k22 pin diagram of PIC18LF45k22 embedded microcontroller PIC18FXXK22 PIC18 example C18 codes spi
Contextual Info: PIC18 L F2X/4XK22 Data Sheet 28/40/44-Pin, Low-Power, High-Performance Microcontrollers with nanoWatt XLP Technology  2010 Microchip Technology Inc. Preliminary DS41412B Note the following details of the code protection feature on Microchip devices: •