7C51 Search Results
7C51 Datasheets (3)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
BZD27C51
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Jiangsu JieJie Microelectronics Co Ltd | 2.3W silicon power Zener diodes in SOD-123FL package with breakdown voltages from 6.8V to 200V, ±5% tolerance, low zener impedance, and surge current capability. | Original | ||||
BZY97C5.1
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SUNMATE electronic Co., LTD | Axial leaded silicon Zener diode BZY97C3.3-BZY97C240 with 1.5W power dissipation, 3.3 to 240V voltage range, DO-41 package, and operating junction temperature from -55 to +175°C. | Original | ||||
BZY97C51
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SUNMATE electronic Co., LTD | Axial leaded silicon Zener diode BZY97C3.3-BZY97C240 with 1.5W power dissipation, 3.3 to 240V zener voltage range, DO-41 package, and operating junction temperature from -55 to +175°C.Axial leaded silicon Zener diode BZY97C3.3-BZY97C240 with 1.5W power dissipation, 3.3 to 240V zener voltage range, DO-41 package, and operating junction temperature from -55 to +175°C.Axial leaded silicon Zener diode BZY97C3.3-BZY97C240 with 1.5W power dissipation, 3.3 to 240V zener voltage range, DO-41 package, and operating junction temperature from -55 to +175°C.Axial leaded silicon Zener diode BZY97C3.3-BZY97C240 with 1.5W power dissipation, 3.3 to 240V voltage range, DO-41 package, and operating junction temperature from -55 to +175°C.Axial leaded silicon Zener diode BZY97C3.3-BZY97C240 with 1.5W power dissipation, 3.3 to 240V voltage range, DO-41 package, and operating junction temperature from -55 to +175°C.Axial leaded silicon Zener diode BZY97C3.3-BZY97C240 with 1.5W power dissipation, 3.3 to 240V voltage range, DO-41 package, and operating junction temperature from -55 to +175°C.Axial leaded silicon Zener diode BZY97C3.3-BZY97C240 with 1.5W power dissipation, 3.3 to 240V voltage range, DO-41 package, and operating junction temperature from -55 to +175°C.Axial leaded silicon Zener diode BZY97C3.3-BZY97C240 with 1.5W power dissipation, operating voltage range 3.3 to 240V, DO-41 package, and junction temperature range from -55 to +175°C.Axial leaded silicon Zener diode BZY97C3.3-BZY97C240 with 1.5W power dissipation, 3.3 to 240V zener voltage range, DO-41 package, and operating junction temperature from -55 to +175°C.Axial leaded silicon Zener diode BZY97C3.3-BZY97C240 with 1.5W power dissipation, 3.3 to 240V zener voltage range, DO-41 package, and operating junction temperature from -55 to +175°C. | Original |
7C51 Price and Stock
Vishay Intertechnologies RLR07C5111FRR36Resistor: metal film; 5.11kΩ; 250mW; ±1%; -65÷150°C; axial; L: 6.3mm |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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RLR07C5111FRR36 | 4,800 | 4,800 |
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Buy Now | ||||||
TDK Corporation B25667C5117A175Capacitor: polypropylene; one phase; Q@50Hz: 6.9kVAR,10kVAR; 19A |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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B25667C5117A175 | 7 | 1 |
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Vishay Intertechnologies BZD17C51P-E3-08Diode: Zener; 0.8W; 51V; SMD; DO219AB,SMF; single diode |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BZD17C51P-E3-08 | 30,000 |
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BZD17C51P-E3-08 | 18 Weeks | 3,000 |
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Vishay Intertechnologies BZD27C51P-E3-18Diode: Zener; 0.8W; 51V; SMD; DO219AB,SMF; single diode; BZD27C |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BZD27C51P-E3-18 | 50,000 |
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BZD27C51P-E3-18 | 18 Weeks | 10,000 |
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Fagor Electrónica BZY97C51GP TRDiode: Zener; 1.5W; 51V; DO204AL,DO41; single diode; reel; BZY97C |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BZY97C51GP TR | 5,000 |
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Get Quote | |||||||
7C51 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
AS7C31024-12TC
Abstract: AS7C1024-15TJC
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Original |
32-pin7c512ps7c31024-15jias7c31024l-15jc+8 | |
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Contextual Info: PRELIMINARY 131,072 W ORDS X 8 BIT CMOS PSEUDO STATIC RAM DESCRIPTION The 7C518129A-LV Family is a 1M bit high speed CMOS Pseudo Static RAM organized as 131,072 words by 8 bits. The TC518129A-LV Family utilizing one transistor dynamic memory cel! with CMOS |
OCR Scan |
7c518129a-lvtc518129a-lv-12lvtc518129afwl-80lv+4 | |
AS7C1024-15TJC
Abstract: AS7C1024L-20JC AS7C31024-12TC AS7C1024-10JC
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Original |
32-pin7c512as7c31024-20tcas7c31024l-12tc+8 | |
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Contextual Info: $6& $6&/ $6& $6&/ .ð&02665$0 &RPPRQ,2 IDPLO\ HDWXUHV • TTL/LVTTL-compatible, three-state I/O • 32-pin JEDEC standard packages - 300 mil PDIP and SOJ Socket compatible with 7C512 64Kx8) - 400 mil SOJ - 8mm × 20mm TSOP |
Original |
32-pin7c512max7c1024l-20tcas7c31024-12tc+6 | |
7C1024Contextual Info: $6& 9.ð&02665$0 &RPPRQ,2 HDWXUHV • TTL-compatible, three-state I/O • 28-pin JEDEC standard packages - 300 mil PDIP and SOJ Socket compatible with 7C512 and 7C1024 - 8x13.4 TSOP • ESD protection ≥ 2000 volts • Latch-up current ≥ 200 mA |
Original |
28-pin7c5127c1024as7c256-12pc+6 | |
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Contextual Info: High Performance 128Kx8 C M O S SRAM p i AS7C1024 AS7C1024L 128Kx8 CM O S S RAM Common I/O FEATURES • Organization: 131,072 words x 8 bits • Equal access and cycle times • High speed • Easy memory expansion with CE1, CE2, OE inputs - 10/12/15/20/25/35 ns address access time |
OCR Scan |
128kx8as7c1024as7c1024l32-pin+2 | |
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Contextual Info: 7C516 7C517 CYPRESS SEMICONDUCTOR • Features • Fast — 38-ns clock cycle commercial 16 x 16 Multipliers b e independently specified as e ith e r tw o’s com plem ent o r unsigned m agnitude num bers. C ontrols a re provided fo r rounding a nd form at adjustm ent o f the full-precision 32-bit product. |
OCR Scan |
cy7c516cy7c51738-ns32-bit+4 | |
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Contextual Info: H ig h P erform a n ce 32 K X 16 CMOS SRAM A S7C 513 A S 7 C 3 5 13 3 2 K x 16 CMOS SRAM • T T L - c o m p a tib le , th r e e - s ta te I / O • H ig h s p e e d • 4 4 - p i n JEDEC s ta n d a r d p a c k a g e - 4 0 0 m i l SO J - 1 0 / 1 2 / 1 S / 2 0 n s a d d r e s s a c c e ss tim e |
OCR Scan |
1-20011-a3-10jcas7c3s13-10jcs7c513-12jc+6 | |
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Contextual Info: High Performance 32Kx8 CMOS SRAM p i AS7C256 AS7C256L 32Kx8 CMOS SRAM Common I/O FEATURES • Organization: 32,768 words x 8 bits Equal access and cycle times • High speed Easy memory expansion with CE and OE inputs - 10/12/15/20/25/35 ns address access time |
OCR Scan |
32kx8as7c256as7c256l28-pin+3 | |
7C1024
Abstract: AS7C256
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OCR Scan |
as7c2567c5127c10241dd344 | |
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Contextual Info: H ig h P erfo rm a n ce 32K X8 CMOS SRAM AS7C.256 AS7C 256L A 32KX8 CMOS SRAM Common I/O • Organization: 32,768 words x 8 bits •H ig h sp eed - 1 0 /1 2 /1 5 /2 0 /2 5 /3 5 ns address access time - 3 / 3 / 4 / 5 / 6 /8 ns output enable access time • Low power consumption |
OCR Scan |
32kx87c5127c1024as7c256+6 | |
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Contextual Info: High Performance 128KX8 CMOS SRAM AS7C1024 AS7C31024 128KX8 CMOS SRAM Features • Organization: 131,072 words x 8 bits • High speed - 1 0 / 1 2 / 1 5 / 2 0 / 2 5 ns address access time - 3 / 3 / 4 / 5 / 6 ns output enable access time • Low power consumption |
OCR Scan |
128kx8as7c1024as7c310247c512+2 | |
8C710
Abstract: 7111-C
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Original |
1234516789abc82defc81e84aecdabcde9759f711111111111111111111111111111111111149ab1+8 | |
AS7C512-20JC
Abstract: AS7C512-15pc AS7C512 10n12 AS7C512-12JC 7C256 AS7C512L AS7CS12 Static Random Access Memory SRAM 7CS12-20
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OCR Scan |
as7c512as7c512l64kx832-pin+9 | |
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CY7C516
Abstract: 2N219
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OCR Scan |
cy7c516cy7c5172n219 | |
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Contextual Info: 7C510 7 CYPRESS SEMICONDUCTOR • Fast — C Y 7 C 5 I0 —45 h a s a 4 5 -n s m ax. clock cycle (com m ercial) — C Y 7C 510—55 h as a 5 5-n s (m ax.) clock cycle (m ilitary) • Low power • 16 x 16 bit p arallel m u ltip lica tio n w ith accum u lation to 3 5 -b it resu lt |
OCR Scan |
cy7c510km114--c | |
CY7C517
Abstract: CY7C516-55GC
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OCR Scan |
cy7c516cy7c51732-bitam29516+5 | |
f1f9Contextual Info: 123456781 12345674869AB4C9DEFB469F46649B47941 9ABCADEFEADE A 6 !"#34678"E$%&&&%444%9' (6) !"#346783E$%&&&%444%9' (6) !"#34678"E$%&&&%444%9# (6) !"#346783E$%&&&%444%9# CCAACBC (5) "1(%D4*$115+4*$)1 31(%D4*$1156+*$) |
Original |
12345674869ab4c9defb4346783e0f1a1219aaba165f+3 | |
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Contextual Info: H i ” h Pi i f o r n i . i i H i BB \S7C2S6 A Ì Z K '- “ iZ K x8 M O S SRAM ü \S7C2S6I 2 K X K (’M O S S R A M (Corninoli J / 0 ) • Easy m em ory expansion w ith CE and OE inputs • TTL-compatible, three-state I/O • 28-pin JEDEC standard packages |
OCR Scan |
28-pin7c512 | |
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Contextual Info: High Performance 64KX8 CMOS SRAM 7C512 7C512L 64KX8 CMOS SRAM Features • Organization: 6 5 ,5 3 6 w ords x 8 bits • H igh speed - 1 2 / 1 5 / 2 0 / 2 5 / 3 5 ns address access time - 3 / 4 / S / 6 / 8 ns output enable access tim e • Low pow er consum ption |
OCR Scan |
64kx8as7c512as7c512l0ddd473 | |
AS7C256
Abstract: 256x128x8 TI 344C
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OCR Scan |
32kx8as7c256as7c256l28-pin+6 | |
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Contextual Info: $6& $6& 99.ð&02665$0 HDWXUHV • TTL-compatible, three-state I/O • 44-pin JEDEC standard package - 400 mil SOJ - 400 mil TSOP II • Upward compatibility - 64Kx16 AS7C1026) - 256K×16 (AS7C4098) • Center power and ground pins |
Original |
44-pinas7c1026as7c4098as7c3513+6 | |
CY7C516
Abstract: LSP3130 CY7C517 7c516 CY7C516-75DMB 7C516-42 MPY016H CY7C516-38JC CY7C517-38GC CY7C516-55PC
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OCR Scan |
cy7c516cy7c51738-ns42-ns+11 | |
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Contextual Info: 1 1111111111111 111111 1 1111111111111 1 1111111111111 1 1111111111111 1 1 8123456788896AB78CDEDFD8C 8 888 8 88888888 88 88888888 8 8 D8F 888 88FF8C8CDC88F D!8D89"#8F 9DEB3$8%8&' 3 %*+8&'($8,26-8,C$8FF8 )%8DDEDC |
Original |
88896ab78cdedf1234567823145678491a58bc1d29e1f1de24e12313775b9+6 | |