7B00 Search Results

AT49BV802A

Abstract: AT49BV802AT AT49BV802AT-70CI at49bv802a-70tu
Contextual Info: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Fifteen 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout

Contextual Info: LM98725 LM98725 3 Channel, 16-Bit, 81 MSPS Analog Front End with LVDS/CMOS Output, Integrated CCD/CIS Sensor Timing Generator and Spread Spectrum Clock Generation Literature Number: SNAS474D LM98725 3 Channel, 16-Bit, 81 MSPS Analog Front End with LVDS/ CMOS Output, Integrated CCD/CIS Sensor Timing

SAMSUNG MCP

Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
Contextual Info: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)

CompactCellTM Static RAM

Contextual Info: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS

SA6954

Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00
Contextual Info: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages „ Single 1.8 volt read, program and erase (1.70 to

Contextual Info: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised

001C

Abstract: 100C 500C AN58 AN74 DS2437
Contextual Info: DS2437 PRELIMINARY DS2437 Smart Battery Monitor FEATURES PIN ASSIGNMENT • Unique 1–WireTM interface requires only one port pin for communication DQ 1 16 VDD NC 2 15 NC VAD 3 14 NC NC 4 13 X1 VSENS+ 5 12 NC VSENS– 6 11 X2 NC 7 10 NC AGND 8 9 • Provides unique 64–bit serial number to battery packs

100-Pin Package Pin-Out Diagram

Abstract: C343I ZF MicroSystems 486
Contextual Info: MAX 7000 ju iä ti MAX Programmable Logic Device Family J a n u a ry 1998. ver. 5 Features. D ata S h e e t • ■ ■ ■ ■ ■ ■ ■ High-performance, EEPROM-based programmable logic devices PLDs based on second-generation Multiple Array M atrix (MAX)

740-0007

Abstract: EN29GL064 6A000
Contextual Info: Preliminary EN29GL064 EN29GL064 64 Megabit 8192K x 8-bit / 4096K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only FEATURES • Suspend and Resume commands for Program and Erase operations • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and

47C620

Abstract: 47c820
Contextual Info: TOSHIBA TMP47C020G CMOS 4-B it Microcontrollers ment and operational confirmation of the 47C620/820 applica­ tion systems programs . TMP47C020G The 47C020, which is equipped with an EPROM as program memory, is a piggyback type evaluator chip used for develop­

C900

Abstract: DS2434 DS2436 DS2436S PR35 2465H
Contextual Info: DS2436 PRELIMINARY DS2436 Battery ID/Monitor Chip FEATURES • On–board A/D converter monitors battery voltage for end–of–charge and end–of–discharge determination PACKAGE OUTLINE PR35 PACKAGE DALLAS DS2434 DALLAS DS2436 • Eliminates thermistors by sensing battery tempera-

110R

Abstract: S29GL128N
Contextual Info: Am29LV6402M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL128N supersedes Am29LV6402M and is the factory-recommended migration path. Please refer to the S29GL128N Data Sheet for specifications and ordering information. Availability of this

256Kbytes

Abstract: MB90340 F2MC-16LX F345C IC BOSCH QFP F347S P1487 F343 348s 7984
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS07-13730-1E 16-bit Proprietary Microcontroller CMOS F2MC-16LX MB90340 Series MB90F342/C S , MB90F343/C(S), MB90F345/C(S), MB90F346/C(S), MB90F347/C(S), MB90F349/C(S), MB90341/C(S), MB90342/C(S), MB90346/C(S), MB90347/C(S),

M29W640DB

Abstract: M29W640D M29W640DT A0-A21 6A000
Contextual Info: M29W640DT M29W640DB 64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) ■ ACCESS TIME: 70, 90 ns

LH28F800BJHB-PTTL10

Abstract: FC004 ap007 7D002
Contextual Info: Date 8M x8/x16 Flash Memory LH28F800BJHB-PTTL10 Jul. 6. 2001 LHF80J24 ●Handle this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited without the express written

DS1621

Abstract: sensor thermostat capacitative sensors DS1621V DS1621S soic 208 mil
Contextual Info: DS1621 Digital Thermometer and Thermostat www.dalsemi.com PIN ASSIGNMENT FEATURES § Temperature measurements require no external components § Measures temperatures from –55°C to +125°C in 0.5°C increments. Fahrenheit equivalent is –67°F to 257°F in 0.9°F

P-TFBGA63-0911-0

Abstract: BA102 PTFBGA-63 BA111 diode ba102 BA119 B641 BA95 BA112
Contextual Info: TC58FVT641/B641FT/XB-70,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M x 8 BITS / 4M × 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory

NAND FLASH SAMSUNG

Abstract: 848a hs010 MARKING 016H
Contextual Info: Flash Cards ATA45 Series White Electronic Designs ATA45 Series FLASH CARDS 8MB to 512MB PRODUCT DESCRIPTION ATA45 series Flash ATA cards are built with NAND flash memory components operating as solid-state disk. They comply with the PC card ATA standard and are suitable for

Contextual Info: DS1622 A D V A N C E D IN FO RM ATIO N DALLAS s e m ic o n d u c to r DS1622 3V Digital Thermometer and Thermostat FEATURES PIN ASSIGNMENT • Temperature measurements require no external com­ ponents SDA SCL • Measures temperatures from -55°C to +125°C in

nec V850e2m manual

Abstract: v850E2M architecture v850e2 architecture
Contextual Info: Cover User’s Manual 32 V850E2/PG4-L User’s Manual: Hardware Renesas microcomputers V850 Series All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by

LHF12F16

Abstract: wp 146 LH28F128BFHT-PTTL75A
Contextual Info: PRODUCT SPECIFICATION Integrated Circuits Group LH28F128BFHT-PTTL75A Flash Memory 128M 8Mb x 16 (Model Number: LHF12F16) Spec. Issue Date: June 7, 2004 Spec No: FM046010 LHF12F16 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction,

BA102

Abstract: diode ba102 diode ba103 TH50VSF3680AASB A12F TH50VSF3681AASB BA41 BA96
Contextual Info: TH50VSF3680/3681AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF3680/3681AASB is a mixed multi-chip package containing a 8,388,608-bit Full CMOS SRAM and a 67,108,864-bit flash memory. The CIOS and CIOF inputs can be used to select the optimal memory configuration.

Contextual Info: î ft SEMICONDUCTOR DALLAS DS2436 Battery ID/Monitor Chip PACKAGE OUTLINE FEATURES • Unique 1-Wire interface requires only one port pin for communication ■ Provides unique 64-bit identification number to battery packs ■ On-board A/D converter monitors battery

Contextual Info: DS1621 DALLAS SEMICONDUCTOR DS1621 Digital Thermometer and Thermostat FEATURES PIN ASSIGNMENT • Measures temperatures from -5 5 °C to +125°C in 0.5°C increments. Fahrenheit equivalent is -6 7 °F to 257°F in 0.9°F increments SDA □ E 1 SCL □ E 2