798M Search Results

1108 D16

Abstract: DS90CR481 DS90CR483 DS90CR484 DS90CR485 DS90CR486
Contextual Info: DS90CR486 133MHz 48-Bit Channel Link Deserializer 6.384 Gbps General Description The DS90CR486 receiver converts eight Low Voltage Differential Signaling (LVDS) data streams back into 48 bits of LVCMOS/LVTTL data. Using a 133MHz clock, the data throughput is 6.384Gbit/s (798Mbytes/s).

LVDS 30 pin cable

Abstract: 1108 D16 DS90CR481 DS90CR483 DS90CR484 DS90CR485 DS90CR486
Contextual Info: DS90CR486 133MHz 48-Bit Channel Link Deserializer 6.384 Gbps General Description The DS90CR486 receiver converts eight Low Voltage Differential Signaling (LVDS) data streams back into 48 bits of LVCMOS/LVTTL data. Using a 133MHz clock, the data throughput is 6.384Gbit/s (798Mbytes/s).

Contextual Info: DS90CR486 www.ti.com SNLS149C – FEBRUARY 2003 – REVISED MARCH 2013 DS90CR486 133MHz 48-Bit Channel Link Deserializer 6.384 Gbps Check for Samples: DS90CR486 FEATURES 1 • • • • • • 2 • • • • • Up to 6.384 Gbps Throughput 66MHz to 133MHz Input Clock Support

Contextual Info: HY5117400A Series -HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY5117400A is the new generation and fast dynamic R A M organized 4,194,304 x 4-bit. The HY5117400A utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: «HYUNDAI H Y 5 1 1 7 1 O O A S e r ie s 1 6 M x 1 - b it CM O S DRAM DESCRIPTION The HY5117100A is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY5117100A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: HY5117400A Series ••HYUNDAI 4M x 4-bit CMOS DRAM DESCRIPTION me HY5117400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. "Hie HY5117400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

Ceramic Capacitors 104

Abstract: mev-50a DXW21BN7511S SAYFP1G95AA0B00 ck 66 ul94v-0 lcd SAYFP897MCA0B00 SAFEB1G57KE0F00 SAWEN1G84 murata enc-03r MA300D1-1
Contextual Info: MURATA PRODUCTS 2009-2010 2009-2010 MURATA PRODUCTS !Note • This PDF catalog is downloaded from the website of Murata Manufacturing co., ltd. Therefore, it’s specifications are subject to change or our products in it may be discontinued without advance notice.

A1HV

Abstract: OQ11 SLTC
Contextual Info: “H Y U N D A I 11 • M 11 W I I I H Y 5 1 1 8 2 6 0 J 5e r i e s 4 1 1 w n e us« n « A O o ä i i » .u w or* a o o M in o 1M X 16-bit CMOS nDRAM with 2CAS &WPB DESCRIPTION The HY5118260 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5118260

Contextual Info: HY5117404B,HY5116404B 4Mx4, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process

PN3563

Contextual Info: I V , PN3563 PN5130 PN5132 NPN SILICON RP SMALL SIGNAL TRANSISTORS CASE TO-92A THE ABOVE TYPES ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR RF SMALL SIGNAL APPLICATIONS. PN3563 PN5130 PN5132 EBC fill PN3563 ABSOLUTE MAXIMUM RATINGS PN5I3Q PN5132 Collector-Base Voltage

Contextual Info: SMD Shielded Type : CDRH * D * / * Standard Series DIMENSIONS (mm) LAND PATTERNS (mm) 外形寸法図 WIRE 線種 2 5. .4 2 M ax 4. . 5. 2 4 Max.1.8 1 1. Max. 4.0 CONSTRUCTION 磁気構造図 4 1. ( 1.7µH - 33µH ) DIMENSIONS (mm) LAND PATTERNS (mm)

HY5117404C

Abstract: HY5117404CJ
Contextual Info: HY5117404C,HY5116404C 4Mx4, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process

lcd 10X2

Abstract: 10x2 lcd pin PC1002A-O 10x2 LCD HD66730 20 x 04 character lcd
Contextual Info: www.p-tec.net sales@p-tec.net Tel: Fax: 719 589 3122 (719) 589 3592 PC1002A-O (10x2) Character LCD Display Absolute Maximum Ratings at TA = 25 °C Features *10 Character, 2 Line *View Angle 12H or 6H *TN or STN Fluid * Extended Temperature Range available

HY5117400A

Contextual Info: ••H Y U N D A I HY5117400A Series 4M X 4-bit CMOS DRAM DESCRIPTION The HY5117400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit, The HY5117400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

HY5117400CJ

Abstract: MAX7523
Contextual Info: - « y u n d â « HY5117400C,HY5116400C T 4Mx4, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this

Contextual Info: Surface Mount 722.00MHz SAW Filter AFS14A11-722.00-T3 Pb RoHS Compliant Moisture Sensitivity Level MSL – This product is Hermetically Sealed and not Moisture Sensitive - MSL = N/A: Not Applicable FEATURES: 1.4 x 1.1 x 0.7 mm | | | | | | | | | | | | | | |

Contextual Info: 19-0049; Rev 0; 10/92 Palm top Com puter and Flash M em ory Power-Supply R egulators The MAX717-MAX721 provide three improvements over prior-art devices. Physical size is reduced - th e high switch­ ing frequencies up to 0.5MHz m ade possible by MOSFET

PP-T20

Abstract: HY5117400B bel power QBS
Contextual Info: HY5117400B Series HYUNDAI 4M X 4-bit CM O S DRAM DESCRIPTION The HY5117400B is the new generation and fast dynamic R A M organized 4,194,304 x 4-bit. The HY5117400B utilizes Hyundai's C M O S silicon gate process technology as well as advanced circuit techniques to provide wide

12v DC SMPS

Abstract: 12V 2A SMPS circuit diagram AD DC SMPS MAX717 smps based 6v battery charger circuit diagram 12V SMPS 2N2955 equivalent SMPS 12V, 5V voltage regulator transistor 2n2955 Power Transistor PNP forward smps 12v
Contextual Info: 19-0049; Rev O; 10/92 /l/l/JX I/l/l Palm top C om puter an d Flash M em ory P ow er-Supply Regulators 4 Low 0.9V to 5.5V Battery Operating Range 4 Unregulated 7V to 20V DC Input Range 4 Dual Regulated Outputs The MAX717-MAX721 provide three Improvements over

BFY90

Abstract: BFX89 case BFX89 BFY-90 BFY90 Data bfx89-bfy90 BFR99A 798m BFR99 208MHZ
Contextual Info: BFX89 BFY90 WIDE BAND VHF/UHF AMPLIFIER • • • SILICON PLANAR EPITAXIAL TRANSISTORS TO-72 METAL CASE VERY LOW NOISE APPLICATIONS : • TELECOMMUNICATIONS • WIDE BAND UHF AMPLIFIER • RADIO COMMUNICATIONS The BFX89 and BFY90 are silicon planar epitaxial NPN transistors produced using

Contextual Info: DS90CR486 www.ti.com SNLS149C – FEBRUARY 2003 – REVISED MARCH 2013 DS90CR486 133MHz 48-Bit Channel Link Deserializer 6.384 Gbps Check for Samples: DS90CR486 FEATURES 1 • • • • • • 2 • • • • • Up to 6.384 Gbps Throughput 66MHz to 133MHz Input Clock Support

an1108

Abstract: reciver
Contextual Info: DS90CR486 DS90CR486 133MHz 48-Bit Channel Link Deserializer 6.384 Gbps Literature Number: SNLS149B DS90CR486 133MHz 48-Bit Channel Link Deserializer (6.384 Gbps) General Description The DS90CR486 receiver converts eight Low Voltage Differential Signaling (LVDS) data streams back into 48 bits of

Contextual Info: Tel: +44 1460 256 100 Fax: +44 1460 256 101 www.golledge.com Golledge Electronics Ltd Eaglewood Park, ILMINSTER Somerset, TA19 9DQ, UK SAW Filter: 763.0MHz Part No: MP05489 Model: TA1243A Rev No: 2 A. MAXIMUM RATING: 1. Input Power Level: 5dBm 2. DC Voltage: 3V

116404B

Abstract: HY5117404BT
Contextual Info: - H Y U N D A I • HY5117404B,H Y5116404B 4Mx4, Extended Data Out mode DESCRIPTION This fam ily is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process