777K Search Results

toyocom TCO

Abstract: TTL LOGIC TCO-777KH
Contextual Info: TOYOCOM TCO-777KH 1/2 TCOTCO-777KH Photo Specification | Outline drawing Specification Parameter Symbol min. Typ. Frequency range Fo 36 Frequency stability dF/Fo -100 Operating Topr 25 temperature Operating voltage Vcc 4.5 5.0 Operating current Icc - - Input voltage

Toyocom

Abstract: TCO TOYOCOM 50mhz crystal oscillator toyocom TCO TCO-777KH
Contextual Info: TOYOCOM | USA Crystal Clock Oscillator Part Number: TCO-777KH Applications: Computers & Peripherals Consumer Application Instrumentation LAN-WAN Telecom wired Package: SMO-J Package Dimensions: 13.89x8.56x4.7mm Product Specifications Frequency Range: 30~75 MHz

SBP 9900

Abstract: SBP9989
Contextual Info: SBP 9960 SBP9960 PR O G R A M M A B LE CRU I/O EXPANDER 1.0 INTRODUCTION 1.1 GENERAL DESCRIPTION The SBP 9960 Programmable CRU I/O Expander is a ruggedized m onolithic software-configurable input/output device fabricated w ith oxide separated Integrated Injection Logic |2 l technology. The

hall marking code A04

Abstract: INTELDX4 write-through YSS 928
Contextual Info: INTEL486 PROCESSOR FAMILY • lntelDX4TM P ro c e s s o r — Up to 100-MHz Operation -Speed-M ultiplying Technology — 32-Bit Architecture — 16K-Byte On-Chip Cache — Integrated Floating-Point Unit — 3.3V Core Operation with 5V Tolerant I/O Buffers

mJI 1032

Abstract: T522 capacitor TSOP 50 PIN ULN 232 V11J LC382161T-17 TSOP50 5B60
Contextual Info: Ordering number: EN5055 CMOS LSI LC382161T-17 No. 5065 SA\YO 2 MEG 65536 words x 16 bits x 2 banks Synchronous DRAM Overview Package Dimensions The LC382161 series products are 3.3 V single-voltage power supply synchronous DRAMs with a 65536-word x 16-bit x 2-bank organization. These DRAMs feature a

tney2

Abstract: HM5241 5241605
Contextual Info: HM5241605 Series 131,072-word x 16-bit x 2-bank Synchronous Dynamic RAM HITACHI A ll inputs and outputs are referred to the rising edge of the clock input. The HM5241605 is offered in 2 banks for improved performance. _ F e a tu re s •3.3V Power s u p p

Contextual Info: ADVANCE 8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH ZBT SRAM MT55L512L18F, MT55L256L32F, MT55L256L36F; MT55L512V18F, MT55L256V32F, MT55L256V36F 8Mb ZBT SRAM 3.3V V dd, 3.3V or 2.5V I/O FEATURES • High frequency and 100 percent bus utilization • Fast cycle times: 10ns, 11ns and 12ns

Contextual Info: ADVANCE 4Mb: 256K x 18, 128K x 32/36 FLOW-THROUGH ZBT SRAM MICRON' I TECHNOLOGY, INC. MT55L256L18F, MT55L128L32F, MT55L128L36F; MT55L256V18F, MT55L128V32F, MT55L128V36F 4Mb ZBT8SRAM 3.3V V dd, 3.3V or 2.5V I/O FEATURES High frequency and 100 percent bus utilization

Contextual Info: M m p n M 8 I 2Mb: 128K x 18, 64K x 32/36 3.3V I/O, FLOW-THROUGH ZBT SRAM O lV ilU ^ IV IU MT55L128L18F, MT55L64L32F, MT55L64L36F ZBT SRAM 3.3V Vdd, 3.3V I/O FEATURES High frequency and 100 percent bus utilization Fast cycle times: 10ns, 11ns and 12ns Single +3.3V +5% power supply

Contextual Info: MOSEL VITELIC V63C31321024 32K X 32 CMOS SYNCHRONOUS BURST PIPELINED SRAM PRELIMINARY Features Functional Description • ■ ■ ■ ■ ■ ■ ■ ■ The V63C31321024 is a high-speed synchro­ nous burst pipelined CMOS SRAM organized as 32,768 words by 32 bits that supports both ¡486/

D78 NEC

Abstract: 986M
Contextual Info: CB-C10 2.5-Volt, 0.25-M icron drawn CMOS Cell-Based ASIC NEC NEC Electronics Inc. Preliminary March 1997 Figure 1. Chip Size Package (CSP) Description NEC’s 0.25 n.m drawn (0.18 (j.mL-effective)CB-C10family incorporates ultra-high-performance cores with deep sub­

Contextual Info: HM5216808C Series HM5216408C Series 1,048,576-word x 8-bit x 2-bank Synchronous Dynamic RAM SSTL-3 2,097,152-word x 4-bit x 2-bank Synchronous Dynamic RAM (SSTL-3) HITACHI ADE-203-617 (Z) Preliminary Rev. 0.0 Jul. 10, 1996 Description A ll inputs and outputs are referred to the rising edge of the clock input. The HM5216808C Series,

Contextual Info: HB526C264EN-10IN, HB526C464EN-10IN 1.048.576-word x 64-bit x 2-bank Synchronous Dynamic RAM Module 1.048.576-word x 64-bit x 4-bank Synchronous Dynamic RAM Module HITACHI ADE-203-737A Z Rev. 1.0 Feb. 7, 1997 Description The HB526C264EN, HB526C464EN belong to 8-byte DIMM (Dual In-line Memory Module) family,

9436a

Contextual Info: ADVANCE MT55L128L18P, MT55L64L32P, MT55L64L36P 2.25Mb ZBT SRAM 3 .3V V od, Selectable Burst Mode FEATURES • • • • • • • • • • • • • • • • • High frequency and 100 percent bus utilization Fast cycle times: 7ns, 7.5ns, 8.5ns and 10ns

x2864

Abstract: TI25A X28C256BP-15 X28C256B X28C256BP15 xicor 2206 32768X8 T14174 X28C256B-15 X2864A
Contextual Info: E4E D XI CO R INC • ^41743 0002510 1 ■ « P R E LIM IN A R Y IN F O R M A T IO N 256K Commercial Industrial X28C256B X28C256BI 32K x 8 Bit Electrically Erasable PROM FEATURES • 150 ns Access Time • LOW Power CMOS — 60 mA Active Current Max. — 200 ju.A Standby Current Max.

LT 3852

Abstract: X2816C X2816CI c 3852 Scans-00120002
Contextual Info: « K X 2Ô 16C 16K 2048 X 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • 90ns Access Tim e • Simple Byte and Page Write — Single 5V Supply — No External High Voltages or Vpp Control Circuits — Self-Timed — No Erase Before Write — No Complex Programming Algorithms

ti35

Abstract: revere load cell
Contextual Info: “H Y U N D A I H Y 5 1 1 7 4 1 0 4M X S e r ie s 4-bit CMOS DRAM with Write-Per-Bit DESCRIPTION The HY5117410 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit with function of Write-Per-Bit. The HY5117410 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced

R40 AH

Contextual Info: HM5283206 Series 131,072-word x 32-bit x 2-bank Synchronous Graphic RAM HITACHI ADE-203-223A Z Rev. 1.0 May. 30, 1996 Description All inputs and outputs signals refers to the rising edge of the clock input. The HM5283206 provides 2 banks to realize better performance. 8 column block write function and write per bit function are

NEC 421000

Abstract: TTL 7404 421000 60 PD71088 7404 uPD421000 LS112 sn 7404 n ic diagram LM 7404 ic 421000
Contextual Info: J V f« L Z NEC Electronics Inc. APPLICA TIO N NOTE 5 3 //P D 4 2 10 00 /y u P D 421 00 1/yu P D 4 21 002 1 - m e g a b it d y n a m ic r a m s Description NEC’s //PD421000, juPD421001, and ¿IPD421002 are 1-m egabit dynam ic RAMs DRAMs m anufactured with

Contextual Info: ADVANCE IU IIC R D N 2 5 6 K X 1 8 , 1 2 o K X 3 2 /3 6 I LVTTL, FLOW-THROUGH ZBT SRAM d R M h H - .U IV I U MT55L256L18F, MT55L128L32F, MT55L128L36F ZBT SRAM 3.3V V dd, Selectable Burst Mode FEATURES • • • • • • • • • • • • • •

3240B

Contextual Info: HM5241605C Series 131,072-word x 16-bit x 2-bank Synchronous Dynamic RAM HITACHI ADE-203-381B Z Rev. 2.0 Jan. 7, 1997 Description All inputs and outputs are referred to the rising edge of the clock input. The HM5241605C is offered in 2 banks for improved performance.

Contextual Info: Thermally enhanced Low VFB Step-Down LED Driver Thermally enhanced Low VFB Step-Down LED Driver ADT6780 ADT6780 概述 该ADT6780 是一款热增强型电流模式降压型 LED驱动芯片, 适用于各种高功率发光 LED的应用由于其工作范围宽 VIN : 4.5V~28V

HM5241

Abstract: HM5241605CTT15
Contextual Info: HM5241605C Series Preliminary 131,072-w ord x 16-bit x 2-bank Synchronous Dynam ic RAM H IT A C A ll inputs and outputs are referred to the rising edge of the clock input. The HM5241605C is offered in 2 banks for improved performance. Features • 3.3 V Power supply

Contextual Info: CRYSTAL OSCILLATORS TOYOCOM ADDENDUM TOYOCOM also offers the following to meet your requirements. Further information on these products can be found in our “Crystal Clock Oscillators” catalog. Output Frequency Stability ppm Frequency Range (M Hz) O perating