UPD421002 Search Results

NEC 555

Abstract: 511000 18pin nec v70 18PIN UPD421000V-12 UPD421000V-80 UPD421001C-10 UPD421001C-80 UPD421001LA-10 UPD421002C-80
Contextual Info: - 209 IM CMOS -f ^ £ tt « TRAC max ns CC) V Dynamic f' R A M (1 0 4 8 5 7 6 x 1 ) > 7 fttï TRCY min (ns) TCAD min (ns) TAH Hin (ns) TP min (ns) m 18PIN m TWCY min (ns) TDH min (ns) TRWC min (ns) V D D or V C C IDD (V) (mA) A I DD STANDBY ( I SB/ I SB2)

NEC 421000

Abstract: TTL 7404 421000 60 PD71088 7404 uPD421000 LS112 sn 7404 n ic diagram LM 7404 ic 421000
Contextual Info: J V f« L Z NEC Electronics Inc. APPLICA TIO N NOTE 5 3 //P D 4 2 10 00 /y u P D 421 00 1/yu P D 4 21 002 1 - m e g a b it d y n a m ic r a m s Description NEC’s //PD421000, juPD421001, and ¿IPD421002 are 1-m egabit dynam ic RAMs DRAMs m anufactured with

SIMM 30-pin

Contextual Info: \T J7 2 *^ ^ MC-421000C9 1,048,576 x 9-BIT cm o s d y n a m ic ra m m o d u le w NEC Electronics Inc. PRELIMINARY INFORMATION Description Pin Configurations T he M C -421000C 9 is a static-colum n 1,048,576-w ord by 9-b it dynam ic RAM m odule designed to operate

TTL 7404

Abstract: D421000 pd421000 D42100
Contextual Info: J V I V C2 NEC Electronics Inc. A P P L IC A T IO N N O TE 53 ^ P D 421000///P D 421001///P D 421002 1- m e g a b i t d y n a m i c r a m s Description N E C ’s aiPD421000, /¿PD421001, and /¿PD421002 are 1-m e g a b it d y n a m ic R AM s D R A M s m an u fa ctu re d w ith

Contextual Info: fiPD421002 1,048,576 X 1-Bit Dynamic CMOS RAM V NEC Electronics Inc. Description Pin Configurations The nPD421002 is a static-colum n dynamic RAM orga­ nized as 1,048,576 words by 1 bit and designed to operate from a single + 5-volt power supply. Advanced

Contextual Info: V P D 421002 1 ,0 4 8 ,5 7 6 X 1 -B IT d y n a m ic c m o s r a m * ^ JL/ W N E C Electronics Inc. P R E LIM IN A R Y INFORMATION Description T h e //PD 421002 is a static-colum n, 1,048,576-w ord by 1-bit dynam ic C M O S RAM designed to operate from a single + 5 -v o lt pow er supply. T he device is fabricated