74BBA51 Search Results

C1847

Contextual Info: I HIGH-PERFORMANCE AIGaAs PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS 1 I I MCT5210 MCT5211 PACKAGE DIMENSIONS DESCRIPTION The MCT-521X are high performance CMOS/LSTTL logic compatible phototransistor type optically coupled isolator products. They are constructed using a very low

Contextual Info: TAPERED PACKAGE T-13/. SOLID STATE LAMPS OPTOELECTRONICS STANDARD RED MV502XA PACKAGE DIMENSIONS DESCRIPTION The MV502X Series of solid state indicators is made with gallium arsenide phosphide light emitting diodes. Encapsulation and lens is epoxy. Various lens effects are

CNY17G-3

Abstract: CNY17G3
Contextual Info: Philips Semiconductors Product specification High-voltage optocouplers CNY17G/CNY17GF QUALITY TECHNOLOGIES CORP TMbböSl OOOMbEE M m S7E D IflTY FEATURES • High current transfer ratio and a low saturation voltage, making the devices suitable for use with

Contextual Info: 4N29 4N30 4N31 ÛUALITY TECHNOLOGIES CORP S7E ]> 4N32 4N33 T m4 • Ö TY s a OPTOCOUPLER Opto-isolator comprising an infrared emitting GaAs diode and a silicon npn Darlington phototransistor with accessible base. Plastic 6-lead dual-in-line DIL envelope.

Contextual Info: Philips Sem iconductors Product specification High voltage optocouplers flUALITY T E C H N O L O G I E S CORP SL5582W/SL5583W S7E D • 7 4 b b A5 1 0 D O 4 74 1 EflH ■ f l T Y FEATURES • A wide body encapsulation with a pin distance of 10.16 mm • An external clearance of 9.6 mm

Transistor 3TY

Contextual Info: I I ÛU AL ITY T E C H N O L O G I E S CORP S7E D • 7 4 b b ô 5 1 0 G G4 41 7 212 « f l T Y U N u a t» CNG36 GaAIAs OPTOCOUPLERS O ptically coupled isolators consisting o f an infrared emitting GaAIAs diode and a silicon npn phototransistor w ith accessible base in a SOT90B envelope, designed fo r low input current and long life

Contextual Info: Philips Semiconductors _Product specification T -*i I — Wide body, high isolation, high-speed optocouplers CNW135/CNW136/CNW4502 ÛU ALI TY T E C H N O L O G I E S CORP FEATURES • Wide body DIL encapsulation, with a pin distance of 10.16 mm

Transistor 2TY

Abstract: .2ty transistor npn
Contextual Info: CNX48U Û U A L IT Y T E C H N O L O G I E S CORP 7Mhbfi51 OQO M Sb ? 72T • Û T Y S7E D OPTOCOUPLER % Opto-isolator comprising an infrared emitting GaAs diode and a silicon npn Darlington phototransistor with accessible base. Plastic 6-lead dual-in line DIL envelope.

Contextual Info: SLOTTED OPTICAL SWITCH 0PTOELECT H011CS QVE11233 DESCRIPTION The QVE11233 is designed to allow the user maximum flexibility in applications. Each switch consists of an infrared emitting diode facing an NPN phototransistor across a .150" 3.81 mm gap. FEATURES

G0D4322

Contextual Info: ÚUALITY TECHNOLOGIES CORP 5?E D ?Mbbû51 DD Ü 43 EG •ûTY European “Pro Electron” Registered T y p e s _ CNY51 Optoisolator GaAs Infrared Emitting Diode and NPN — A— Silicon Phototransistor g 3 o 4 FEATURES: 1 ITOPVIEW » SYMJUl -VW A c D

Contextual Info: âUALITY TECHNOLOGIES CORP QUALITY TECHNOLOGIES 57E » 74fc>bflSl 0003k£H 7 NPN SILICON PHOTOTRANSISTOR _ T - H h U MTS370 FEATURES PACKAGE DIMENSIONS L u m in a n ce d ir « c lio n1 —| S ppih e re 0 1.3 -4 » »»«< •• *•■ > •iu04H