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Contextual Info: âUALITY TECHNOLOGIES CORP QUALITY TECHNOLOGIES 57E » 74fc>bflSl 0003k£H 7 NPN SILICON PHOTOTRANSISTOR _ T - H h U MTS370 FEATURES PACKAGE DIMENSIONS L u m in a n ce d ir « c lio n1 —| S ppih e re 0 1.3 -4 » »»«< •• *•■ > •iu04H
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0003kmts37074bba51 |
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MST712
Abstract: MST7532 MST6120 MST8220 MST8532 MST8520 MST8 MST7231 MST8230 MST7520
Contextual Info: d TECHNOLOGIES i/r com ponents - l/R COMPONENTS _ m Alphanumeric Product Listing P rodu ct Page Prod u ct Page Product 2-5 2-7 2-9 2-21 2-15 MST7520 . . MST7521 . .
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me5040es750es770sa6530+15msa7530msa8530sa9530mst6120mst6130mst6220mst712mst7532mst8220mst8532mst8520mst8mst7231mst8230mst7520
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H0A0872-n55
Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
Contextual Info: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1
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1n57221n57231n57241n5725+161n62641n62651n62662004-90xx2600-70xx2n5777-80h0a0872-n55h0a1405-1h0a0865-l51h0a1405hoa708-1hoa9til78 phototransistormoc70t3ir diode til38h0a1874-12
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MSA7530
Abstract: ES750 ME5040 ME504 MSA-7
Contextual Info: M ^ PACKAGE QUALITY INFRARED EMITTERS te c h n o l o g ie s DEVICE NO. TOTAL OUTPUT POWER TYP- AXIAL RADIANT INTENSITY (TYP.) MAX. FORWARD VOLTAGE INCLUDED ANGLE MAX. POWER PEAK EMISSION WAVELENGTH PAGE NO. ME5040 12 mW 18 m W /sr 1.7 V @ 100 mA 40” 150 mW
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me5040es750es770msa6530+5msa7530msa8530msa9530me504msa-7
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