ST2176 Search Results

sb 050 D 331

Abstract: Transistor sb 050 D
Contextual Info: SLOTTED OPTICAL SWITCH OPTOELECTRONICS QVE11233 PACKAGE DIMENSIONS 175 4 45’ L 250 (6 35 I_ — r* 331 (6 3S) .071 (1.70) J_ _ Lead spacing .300". Gap width of .150". Printed circuit board mounting. 2 mm aperture width. 350 <8 SB) MIN J_ _ _ •SEE NOTE 3

Contextual Info: [• T i SLOTTED OPTICAL SWITCH OPTOELECTRONICS Q VE11233 PACKAGE DIMENSIONS T h e Q V E 11233 is designed to allow the user m axim um •- 500 1 2 701 PIN 1 ^ ^ ^ - 1 > c 1 175 (4.45J 1 L .250 (6 35 DESCRIPTION flexibility in applications. Each switch consists of an

QVE11233

Abstract: SLOTTED OPTICAL SWITCH Dt3 diode
Contextual Info: [*0 SLOTTED OPTICAL SWITCH OPTOELECTRONICS QVE11233 DESCRIPTIO N The QVE11233 is designed to allow the user m axim um flexibility in applications. Each switch consists of an infrared emitting diode facing an NPN phototransistor across a .150" 3.81 m m gap.

Contextual Info: SLOTTED OPTICAL SWITCH 0PTOELECT H011CS QVE11233 DESCRIPTION The QVE11233 is designed to allow the user maximum flexibility in applications. Each switch consists of an infrared emitting diode facing an NPN phototransistor across a .150" 3.81 mm gap. FEATURES

QVE11233

Abstract: controlled gap 62 MW111
Contextual Info: SLOTTED OPTICAL SWITCH OPTOELECTRONICS QVE11233 P A C K A G E D IM E N SIO N S D ESC R IPT IO N Th e QVE11233 is designed to allow the user m axim um flexibility in applications. Each switch consists of an infrared emitting diode facing an NPN phototransistor