72T SA Search Results

TCXO 20MHz

Abstract: 20.0MHz TCXO GTXO-72T TCXO L
Contextual Info: 2.8~5.0V SM TCXO Clipped Sine GTXO-72 Specifications GTXO-72T: TCXO, no frequency adjustment GTXO-72V: TCXO with VC frequency adjustment Variant Parameters 7.20 max 4 V Frequency range: 10.0 ~ 20.0MHz ࡯ ࡯ Frequency stability: ±3.0ppm ±2.5ppm ±2.0ppm

epson gt

Abstract: QFP80 TC83230-0004
Contextual Info: TOSHIBA TC83230-0004 TO SHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC83230-0004 TC83230-0004 : SINGLE-CHIP CMOS LSI FOR CALCULATORS WITH PRINTERS APPLICABLE PRINTER HEADS : M-72T MANUFACTURED BY EPSON The TC83230-0004 LSI is a single-chip CM OS LSI for use in

epson gt

Abstract: QFP80 TC83230-0004 0067891 TC832 k0226
Contextual Info: TOSHIBA TC83230-0004 TO SHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC83230-0004 TC83230-0004 : SINGLE-CHIP CMOS LSI FOR CALCULATORS WITH PRINTERS APPLICABLE PRINTER HEADS : M-72T MANUFACTURED BY EPSON The TC83230-0004 LSI is a single-chip CM OS LSI for use in

Contextual Info: Philips Semiconductors bbS3R31 0031704 72T M A P X NPN 1 GHz video transistors £ Product specification BFQ232; BFQ232A N AflER PHILIPS/DISCRETE DESCRIPTION b'JE D PINNING NPN silicon epitaxial transistor in a SOT32 TO-126 package, with emitter-ballasting resistors and a

Contextual Info: N AMER PHILIPS/DISCRETE b^E D bbS3^31 QQ2T474 72T APX DLVVO / V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f, and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is

Contextual Info: HEWLETT-PACKARD/ CMPNTS blE P HEW LETT PACKARD • 4447SÔ4 G01Q32b 72T IVA-05200 MagIC Silicon Bipolar MMIC 1.5 GHz Variable Gain Amplifier Chip IVA-05200 Chip Outline Features • • • • • • • IHPA Differential Input and Output Capability DC to 1.5 GHz Bandwidth; 2.0 Gb/s Data Rates

Contextual Info: V T C INC h4E i V T C In c. Value the Customer • TafiflTET D D 0 3 T 3 7 72T ■ VTC VM7140 2, 4 OR 8-CHANNEL, 5-VOLT, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER PRELIMINARY TWO/THREE TERMINAL & SERVO PREAMPLIFIERS FEA TU R ES • H ig h P e rfo rm a n c e

Contextual Info: S T 72E 311 S T 72T 311 8-BIT MCU WITH 8 TO 16K OTP/EPROM, 384 TO 512 BYTES RAM, ADC, WDG, SCI, SPI AND 2 TIMERS DATA SHEET • User Program Memory OTP/EPROM : 8 to 16K bytes ■ Data RAM: 384 to 512 bytes including 256 bytes of stack ■ Master Reset and Power-On Reset

Contextual Info: r = 7 S G S -T H O M S O N * 7M. S T 7 2 E 72 S T 72T 72 8-BIT MCU WITH 24K EPROM, EEPROM, ADC, PWM/BRM DACs, SYNC PROCESSOR, EWPCC, TIMER AND DDC l/F PR ELIM IN A R Y DATA • 4.5V to 5.5V Supply Operating Range ■ 8M H z Maximum Oscillator Frequency ■ Fully Static operation

SK150D

Contextual Info: m Ö13bb71 □□G3Ô32 72T H S E K G SIE D SEMIKKDN SEMIKRON INC Maximum Ratings Conditions VcEVsus Values Units lc = 1 A.V be = - 2 V 1000 V 1000 V VcBO < m CD II m o II I ro < Symbol 1000 V V ebo lc = 0 VcEV lc iCM 7 V D.C. 150 A tp = 1 ms 300 A 150 A If = - lc

ic 4060 pin configuration diagram

Contextual Info: SbE » • 7^2^237 0Q40401 72T ■ S G T H Æ 7 S C S -T H O M S O N A 7f [ « [ M m i H g r a & œ S S M 54H C 4060 M 74H C 4060 G S-THOMSON 14-STAGE BINARY COUNTER/OSCILLATOR ■ HIGH SPEED f M A X = 60 MHz TYP at VCC = 5V ■ LOW POWER DISSIPATION

PC 4200U-444

Abstract: PC2-4200U-444-11 HYS64T64000HU-37-A 1Gb PC2-4200u 444 12 d3 HYS64T32000 MO-237 T64000 HYS72T64000HU-37-A SPD Revision 1.1 HYS64T32000HU-5-A
Contextual Info: D a t a S h e e t , Rev. 0.87, J u n e 2 0 0 4 HYS64T32000[G/H]U–[3.7/5]–A HYS[64/72]T64000[G/H]U–[3.7/5]–A HYS[64/72]T128020[G/H]U–[3.7/5]–A 240-Pin Unbuffered DDR2 SDRAM Modules DDR2 SDRAM Memory Products N e v e r s t o p t h i n k i n g . The information in this document is subject to change without notice.

Contextual Info: DEC i 3 1990 1 IMS A113 ProgrammableLength Digital Delay Line oranos Lengt h[ 10-0] — — - - Provisional Inform ation " " i t n o t Cl k E n - »-Control CL K — Din[8-0] — — - Variable length delay line 5 to 1317 stages long

MA4810

Abstract: MA4820 ma481 2N307 MA1000 Series MA1000
Contextual Info: Hybrid IC for Switching Power Supply mr r THE MA4000 SERIES X Um u W k {Outline] The M A4000 Series was developed by adopting the feature and perform ance of the MA1000 and MA2000 Series, both of which gave satisfactory result. The main converter device is Shindengen designed and m anufactured high performance, low loss power MOS FET. The

Contextual Info: N-CHANNEL POWER MOSFETS IRF624 FEATURES • • • • • • • Lower R dsioni Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

Contextual Info: ~T-zs~n SANSHA ELECTRIC tlFG CO , y g SbE » THYRISTOR-MODULE • TT'USMB DDDDbOfl b?T ■ SEMJ ~ P KT 2 ' 3 O ; ■Maximum ■ ■ 1 | l Ratings . Itca Repetitive Peak Reverse Voltage Mon-Repetitive Peak Reverse Voltage Repetitive Peak Off-State Voltage

110T

Abstract: MW3768H
Contextual Info: CCD Area Image Sensor MW3768H 11mm 2/3 inch Wide CCD Area Image Sensor • Overview ■ Pin Assignments The MW3768H is a 11mm (2/3 inch) Multiple Frame Interline Transfer CCD (M-FIT-CCD) solid state image sensor device. This device uses photodiodes in the optoelectric conversion section

Contextual Info: Ordering num ber: EN3102 2SC4451 NPN Triple Diffused Planar Silicon Transistor 1500V/15mA High-Voltage Amp, High-Voltage Switching Applications Features • High breakdown voltage • Small Cob - Wide ASO • High reliability Adoption of II VP process Absolute Maximum Ratings at Ta = 25°C

2n4117a

Contextual Info: B9 9-9 7 2N4117, 2N4117A, 2N4118, 2N4118A, 2N4119, 2N4119A N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • AUDIO AMPLIFIERS • ULTRA-HIGH INPUT IMPEDANCE AMPLIFIERS Absolute maximum ratings at T* = 25°C Reverse Gate Source & Reverse Gate Drain Voltage

Contextual Info: Panasonic CCD Area Image Sensor MW3768H 11 mm 2/3 inch Wide CCD Area Image Sensor |Pin Assignments •Overview The MW3768H is a 11 mm (2/3 inch) Multiple Frame Interline Transfer CCD (M-FIT-CCD) solid state image sensor device. This device uses photodiodes in the optoelectric conversion

gamma correction

Contextual Info: KA7302D CDS, AGC, GAMMA CORRECTION G E N E R A L D IS C R E T IO N The KA7302D is a bipolar monolithic integrated circuit for CCD Color Video Camera, and then it provides functions of Correlated Double Sampling, Automatic Gain Control and Gamma Correction.

Contextual Info: m o l e x 2.54m m .1 0 0 " Pitch Connector FEATURES AND SPECIFICATIONS Features and Benefits Electrical a Sizes 2 to 28 circuits • Heavy duty end walls for terminal support Voltage: 250V Current: 3.5A (24 AWG) a Feed-toonly a Standard with locking ramp

Contextual Info: For Immediate Assistance, Contact Your Local Salesperson BURR - BROWN i ADS610 PRELIMINARY INFORMATION SUBJECT TO CHANGE WITHOUT NOTICE 14-Bit 10MHz Sampling ANALOG-TO-DIGITAL CONVERTER FEATURES APPLICATIONS • HIGH SPURIOUS-FREE DYNAMIC RANGE: 90dB AT Nyquist

Contextual Info: Panasonic CCD Area Image Sensor MW3758H 11 mm 2/3 inch Wide CCD Area Image Sensor •Overview ■Pin Assignments The MW3758H is a 11mm (2/3 inch) Multiple Frame Interline Transfer C C D (M-FIT-CCD) solid state image sensor device. This device uses photodiodes in the optoelectric conversion