71H4 Search Results

Contextual Info: SAMSUNG ELECTRONICS INC b7E D KM48V512A/AL/ALL • TTbMlME DCISTMB 071 «SIICK CMOS DRAM 512K x 8 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tR A C tC A C tR C KM48V512A/AL/ALL-7 70ns 20ns 130ns KM48V512A/AL/ALL-8

Contextual Info: SAMSUNG ELECTRONICS INC b4E D • 7^4142 KMM5361000A/AG Q014Sh4 SfiS « S M G K DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION The Samsung KM M 5361000A is a 1M bitsX36 Dynamic RAM high density memory module. The Samsung KM M 5361000A consist of eight CMOS 1 M X 4 bit

Contextual Info: KS0122 Multimedia ELECTRONICS MULTISTANDARD VIDEO DECODER The KS0122 converts analog NTSC or PAL video in composite or S-video format to digitized component video. Output data can be selected for CCIR 601 or square pixel sample rates in either YUV or RGB formats. All required clocks and video timing signals are

KM44V1000C

Contextual Info: KM44V1OOOC/CL/CLL CMOS DRAM 1M x4 B it CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tR A C tC A C tR C KM44V1000C/CL/CLL-6 60ns 15ns 110ns KM44V1000C/CL/CLL-7 70ns 20ns 130ns KM44V1000C/CL/CLL-8 80ns 20ns 150ns > Fast Page Mode operation

Contextual Info: KA340TXX Industrial 3-TERMINAL 1A POSITIVE VOLTAGE REGULATORS TO-220 The KA340XX series ot three.terminai positive voltage regulators are available in T0-220 package and with several fixed output voltages, providing better performance than 78XX series regulators

Contextual Info: K M 4 8 C 2 10 4 B S CMOS D R A M ELECTRONICS 2M x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power

Contextual Info: SAMSUNG ELECTRONICS I NC b7 E D • 7^4142 KM41C16001 DGlbOfl? Q B E ■ CMOS DRAM 1 6 M x 1 Bit CM O S Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: The Sam sung KM41C16001 is a CMOS high speed 16,777,216 bit x 1 Dynamic Random A ccess Memory. Its

KM416V4104AS

Contextual Info: KM416V4104AS CMOS D R A M ELECTRONICS 4 M x 1 6 B i t CMOS Dynamic HAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. ,

KM428C128

Contextual Info: SAMSUNG ELECTR ONI CS INC bHE D • 7Tb4142 GD13ÖSb ES7 I SMGK PRELIMINARY KM428C128 CMOS VIDEO RAM 12 8 K X 8 Bit CMOS Video RAM FEATURES • Dual port Architecture 128K x 8 bits RAM port 256 x 8 bits SAM port • Performance Speed — -Parameter

Contextual Info: KM44C1003DT CMOS DRAM ELECTR O NICS 1 M x 4 B i t CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Fast Page Mode Quad CAS CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Access time -5, -6 or -7 , power

KM428C257

Abstract: KM428C256 Video RAM G022134 mz57
Contextual Info: KM428C256 CMOS VIDEO RAM 256K X 8 Bit CMOS Video RAM GENERAL DESCRIPTION FEATURES The Samsung KM428C256 is a CMOS 256K x 8 bit Dual Port DRAM. It consists of a 256K x 8 dynamic random access memory RAM port and 512 x 8 static serial access memory (SAM) port.

BUT-11

Abstract: BUT11 BUT11A transistor VCE 1000V to220 but11 transistor NPN Transistor VCEO 1000V
Contextual Info: BUT11/11A NPN SILICON TRANSISTOR HIGH VOLTAGE POWER SWITCH SWITCHING APPLICATIONS TO -220 ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic Symbol Rating Collector Emitter Voltage : BUT11 : BUT11A Collector Emitter Voltage : BUT11 : BUT11A Emitter Base Voltage

3.58MHZ crystal oscillator

Abstract: P9352 d2p8 P131A
Contextual Info: K S 5 7 P 5 0 16MTP Microcontroller ELECTRONICS KS57P5016 MTP The KS57P5016 single-chip CMOS microcontroller is the MTP Multiple Times Programmable version of the KS57C5016 microcontroller. It has an on-chip E2PROM instead of masked ROM. The KS57P5016 is fully

xPC603E

Abstract: MPE603EFE133LN MPC603EFE133LN MPC603EFE100LN MPC603EFE100TN MPC603ERX100LN MPC603ERX100TN MPC603ERX133LN MPC603ERX133TN MPE603EFE100LN
Contextual Info: ª Freescale Semiconductor, Inc. PID6-603e_N PNS 980521 Motorola Part Numbers Affected: MPC603ERX100LN MPC603ERX133LN MPE603ERX100LN MPE603ERX133LN MPC603EFE100LN MPC603EFE133LN MPE603EFE100LN MPE603EFE133LN MPC603ERX100TN MPC603ERX133TN MPC603EFE100TN MPC603EFE133TN

Contextual Info: KM416C1000BT C MOS DR A M ELECTRONICS 1M x16B it CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh

Contextual Info: CMOS DRAM KM416C157B/BL/BLL 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range: KM416C157B/BL/BLL-5 The S a m sun g K M 4 1 6 C 1 5 7 B /B L /B L L is a C M O S high tRAC tCAC tRC s p e e d 2 6 2 ,1 4 4 b it x 1 6 D y n a m ic R a n d o m A c c e s s

Contextual Info: KM48C514DT CMOS DRAM ELECTRONICS 512 K x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 524,288 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time

BGA and QFP Package ibm

Abstract: XPC603EFE xPC603E MPC603EFE133LN MPC603EFE100LN MPC603EFE100TN MPC603ERX100LN MPC603ERX100TN MPC603EUM/AD Rev 1 MPC603ERX133TN
Contextual Info: PID6-603e_N PNS 980521 Motorola Part Numbers Affected: MPC603ERX100LN MPC603ERX133LN MPE603ERX100LN MPE603ERX133LN MPC603EFE100LN MPC603EFE133LN MPE603EFE100LN MPE603EFE133LN MPC603ERX100TN MPC603ERX133TN MPC603EFE100TN MPC603EFE133TN ª Application-SpeciÞc Information

xPC603E

Abstract: XPC603EFE MPC603EFE133LN marking code motorola ic BGA and QFP Package MPC603EFE100TN Apple Corporation MPE603ERX133 MPE603EFE133LN part marking sc 4c
Contextual Info: ª Freescale Semiconductor, Inc. PID6-603e_N PNS 980521 Motorola Part Numbers Affected: MPC603ERX100LN MPC603ERX133LN MPE603ERX100LN MPE603ERX133LN MPC603EFE100LN MPC603EFE133LN MPE603EFE100LN MPE603EFE133LN MPC603ERX100TN MPC603ERX133TN MPC603EFE100TN MPC603EFE133TN

xPC603E

Abstract: MPC603ERX100TN PLL 120Mhz MPC603EFE133LN MPC603EFE100LN MPC603EFE100TN MPC603ERX100LN MPC603ERX133LN MPC603ERX133TN MPE603EFE100LN
Contextual Info: ª PID6-603e_N PNS 980521 Freescale Semiconductor, Inc.Motorola Part Numbers Affected: MPC603ERX100LN MPE603ERX100LN MPC603EFE100LN MPE603EFE100LN MPC603ERX100TN MPC603EFE100TN Application-SpeciÞc Information MPC603ERX133LN MPE603ERX133LN MPC603EFE133LN MPE603EFE133LN

CS 13001

Abstract: HA 13001 KA2411 13001 8-DIP-300 B 13001 VSI drive KA2410 6800-D
Contextual Info: LINEAR INTEGRATED CIRCUIT KA2410/1 8-DIP-300 TONE RINGER The KA2410/KA2411 is a bipolar integrated circuit designed for telephone bell replacement. FUNCTIONS • Two oscillators • Output am plifier • Power supply control circuit FEATURES • • • •

Contextual Info: S A M S UN G E L E C T R O N I C S INC b7E D • 7^4142 KM48C2000 DDlb2fiS G41 ■ SMGK CMOS DRAM 2 M x 8 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The S am sung KM48C2000 is a CMOS high speed 2,097,152 b it x 8 D ynam ic Random A ccess M em ory. Its

Contextual Info: KS0122 Data Sheet MULTIMEDIA VIDEO MULTISTANDARD VIDEO DECODER The KS0122 converts analog NTSC or PAL video in composite or S-video format to digitized component video. Output data can be selected for CCIR 601 or square pixel sample rates in either YUV or RGB formats. All required