71B414B Search Results

SRAM timing

Contextual Info: SAMSUNG E L E C TRONICS INC b7E J> • 7TbmN2 0Ü177M2 KM79C86 ISfi M S I I S K CMOS SRAM 3 2 K x9 Synchronous Burst Cache RAM with Self-Timed Write FEATURES GENERAL DESCRIPTION • Synchronous Operation The KM79C86 is a 294,912 bit S ynchronou s S tatic Ran­

Contextual Info: KM48C8004AS CMOS DRAM ELECTR O NICS 8 M x 8 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Access time -5, -6, or -7 , package

Contextual Info: KS0093 26 COM / 80 SEG DRIVER & CONTROLLER FOR STN LCD MARCH. 1999. • 7 ^ 4 1 4 2 □□SA'na T71 i 26COM/8QSEG DRIVER & CONTROLLER FOR STN LCD KS0093 KS0093 Specification Revision History Content Version Date 0.0 Original 1998. 06 0.1 Miss typed contents changed

Contextual Info: SAMSUNG ELECTRONICS INC b4E 3 • 7 ^ 4 1 4 2 DDIBTTB TSG PRELIMINARY KM424C257 SMGK CMOS VIDEO RAM 2 5 6 K X 4 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port A rchitecture 256K x 4 b its RAM port 512 x 4 b its SAM port • Performance The Samsung KM 424C 257 is a CMOS 2 5 6 K X 4 bit Dual

Contextual Info: KM75C01A CMOS FIFO First-in First-out FIFO 5 1 2 x 9 C M O S M em ory FEATURES DESCRIPTION • First-in, First-out dual po rt m em o ry - 5 1 2 x 9 organization • Very high speed independent o f de p th /w id th The KM75C01A is dual port m em ory that im plem ents

Contextual Info: K M 2 9 N 16 0 0 0 R Fl ash ELECTRONICS 2Mx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply The KM29N16000T/R is a 2M 2,097,152 x8 bit NAND Flash memory with spare 64K(65,536)x8 bit. Its NAND cell provides the most cost-effective solution for the mass

sc 4145

Abstract: KS0083 KS0084 1414a 142 142 1414a KS0103 KS0104 74148 PIN DIAGRAM pin diagram of 74148 SC-77
Contextual Info: KS0083/84 CMOS DIGITAL INTEGRATED CIRCUIT 80-CHANNEL SEGMENT/COMMON DRIVER FOR DOT MATRIX LCD KS0083/&4 is a graphic type LCD driver LSI w frch is fabricated by CMOS process for high vo«age. In cas« of segment driver, can be setected 4 bit. 1 bit data transfer or chip select mode.

wram samsung

Abstract: 2W-25 OQ29
Contextual Info: KM4232W259A Graphic Memo ry ELECTRONICS FEATURES DESCRIPTION • 1 M Byte Frame-Buffer on a single chip • 2.1 G Byte/Second Internal Bus: - Fast Window Drawing Operations - Fill at up to 2.1 G Byte/Second -Aligned BitBLT at up to 0.64 G Byte/Second • 8-Column Block W rite with Bit and Byte Masking

Contextual Info: KS7214 Timing & SYNC. Generator for B/W CCD GENERAL DESCRIPTION KS7214 is Timing control IC for generating timing signal & sync signal which required camera system using monochrome CCD Image sensor. FUNCTIONS - E IA /C C IR S T A N D A R D S T IM IN G M O D E

Contextual Info: KM29N16000ER Flash ELECTRONICS 2Mx8Bit NAND Flash Memory Extended Temperature Product FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Wide Temperature Operation : -25'C ~ +85'C • Organization - Memory Cell Array : (2M +64K) x 8 bit - Data Register

200A1

Contextual Info: IRLR/U014A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 |iA Max. @ VDS = 60V Lower R DS(0N) : 0.122 Q (Typ.)

Contextual Info: KS57C2408 M icrocontroller ELECTRONICS DESCRIPTION The KS57C2408/2416 single-chip 4-bit microcontroller is fabricated using an advanced CMOS process. With an up-to-12-digit LCD direct-drive capability, 8-bit x 6-channel A/D converter, and versatile 8-bit and 16-bit

DRAM 18DIP

Abstract: KM41C1000CSL-6 KM41C1000CSL-7 KM41C1000CSL-8 DRAM 256kx4
Contextual Info: SAMSUNG ELE CTRONICS INC b?E ]> Wt 7 ^ 4 1 4 2 KM41C1000CSL 0015414 ?hh SM6K CM O S DRAM 1Mx1 Bit CM O S Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Sam sun g KM 41C1000CSL is a C M O S high speed 1,048,576x1 Dynamic Random A cce ss Memory. Its

Contextual Info: KM48C2000A/AL/ALL/ASL CMOS DRAM 2 M x 8 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: ' The Samsung KM48C200QA/AL/ALLVASL is a high speed CMOS 2,097,152 b it x 8 Dynamic Random Access Memory. Its design is optim ized for high

KM48S2020bt

Abstract: 48S2020 44-TS0P2 KM48S2020 48S20 km48s2020btg
Contextual Info: KM48S2020BT SDRAM ELECTRONICS 1M x 8Bit x 2 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply. • LVTTL/SSTL_3 Class II compatible with multiplexed address. • Dual banks operation. • MRS cycle with address key programs.