71BMM2 Search Results

KM44C4104bk

Abstract: cd-rom circuit diagram
Contextual Info: K M 4 4 C 4 10 4 B K CMOS D R A M ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power

D0233

Abstract: 250JUA 250M IRFS340 IRFS341 Tj-25DC
Contextual Info: N-CHANNEL POWER MOSFETS IRFS340/341 FEATURES • Lower R d s i o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

Contextual Info: KM44V1004DT CMOS D R A M ELECTRONICS 1 M x 4 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access

KS57C2616

Abstract: LC5012 64 pin IC microcontroller LCD ic 555 timer 10 minute buzzer obo 112 KS57C2516
Contextual Info: KS57C261& 4-BIT CMOS Microcontroller ELECTRONICS „ J ^ , Product Specification OVERVIEW The KS57C2616 single-chip CMOS microcontroller is designed for high performance using Samsung's newest 4-bit CPU core. With its up-to-896-dot LCD direct drive capability, flexible 8-bit and 16-bit timer/counters, and

KA8507

Abstract: compressor 74142 logic diagram KA8507D 20-DIP-300A
Contextual Info: KA8507 LINEAR INTEGRATED CIRCUIT COMPANDOR KA8507 is a automatic gain control system that ¡s used for dynamic range compression and expansion. According to the companding the signal, this can reduce the noise components. KA8507 includes compressor, expander, pre-amp, filter amp, limiter

IRLZ14A

Contextual Info: IRLZ14A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ ■ BVdss = 60 V Logic-Level Gate Drive Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 |iA Max. @ VDS= 60V

KA8601C

Contextual Info: KA8601C ELECTRONICS Telephone INTRODUCTION The KA8601C is a monolithic integrated circuit for use in high perfor­ mance speaker phone system. The KA860IC consists of speaker phone and speech network. Speaker phone includes attenuators, amplifiers, level detectors, attenuator

samsung km28C256

Abstract: KM28C256-15 KM28C256 KM28C256-20 KM28C256I-15 KM28C256I-20
Contextual Info: S A M S UN G E L E C T R O N I C S INC 7Rb4142 ODlk^OM 2 n b?E D KM28C256 CMOS EEPROM 3 2 K x 8 Bit CMOS Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Operating Temperature Range — KM28C256: Commercial — KM28C256I: Industrial • Simple Byte Write & Page Write

DRAM 18DIP

Abstract: KM41C1000CSL-6 KM41C1000CSL-7 KM41C1000CSL-8 DRAM 256kx4
Contextual Info: SAMSUNG ELE CTRONICS INC b?E ]> Wt 7 ^ 4 1 4 2 KM41C1000CSL 0015414 ?hh SM6K CM O S DRAM 1Mx1 Bit CM O S Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Sam sun g KM 41C1000CSL is a C M O S high speed 1,048,576x1 Dynamic Random A cce ss Memory. Its

ic ka3842b

Abstract: PWM IC 8 PIN DIP KA3842 KA3842B ic ka3842b with pin KA3842 ka3842 application notes Diode RL 4B KA3843B KA3844 KA3844B
Contextual Info: SAMSUNG ELECTRONICS INC b7E » KA3842B/3B/4B/5B • 7ti b M m 2 0017400 247 ■ SIIGK LINEAR INTEGRATED CIRCUIT CURRENT-MODE PWM CONTROLLERS The KA3842B/3B/4B/5B are fixe frequency current-mode PWM controller. They are specially designed for Off-Line and DC-to-DC converter applications with minimal.external

Contextual Info: Rr€íir'in<!‘Y CMOS SRAM KM616V1002B/BL, KM616V1002BI/BLI 64K X 16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION The KM616V1002B/BL is a 1,048,576-bit high-speed Static Random Access Memory organized as 65,536 words by 16 bits.