250JUA Search Results

DM7448A

Abstract: DM7448 dm7447 DM7447 N DM5446AJ DM5446AN DM5446AW DM5447AJ DM7446AJ DM7446AN
Contextual Info: DM 5446A/DM 7446A, Display Drivers KIS DM 5446A/DM 7446A D M 5447A / D M 7 4 4 7 A DM 5448/DM 7448 B C D -to -7 -se g m en t decoder/drivers general description leakage cu rre n t o f 250juA . Since its o u tp u t co n fig u ­ fu lfills a w ide variety o f requirem ents fo r most

ulm 2003

Abstract: ulm 2004 ULN2003 current buffer ULN2003 PIN configuration uln2003 buffer ULN2003N ULN2003 equivalent ULN2003 ULN2003 ac ULN2004N
Contextual Info: ULN2003/04 Signetics High V o lta g e /H ig h Current Darlington Transistor Arrays Product Specification L in e a r P r o d u c t s D E S C R IP T IO N These high voltage, high current Darling­ ton transistor arrays are comprised of seven silicon NPN Darlington pairs on a

CLAREX

Abstract: Vactec optocoupler 118MFRTD BLH ELECTRONICS CALIBRATION TF5SX17ZZ VTL5C10 50hz wien oscillator VTL5C1 Wheatstone Bridge amplifier Sage Laboratories Phase Shifters
Contextual Info: rrun^Aß J Ê k tm F Application Note 43 TECHNOLOGY June 1990 Bridge Circuits Marrying Gain and Balance Jim Williams Bridge circuits are among the most elemental and powerful electrical tools. They are found in measurement, switching, oscillator and transducer circuits. Additionally, bridge tech­

IRFIZ44

Abstract: IRFIZ40 IRFWZ40 IRFWZ44 LS50A
Contextual Info: N-CHANNEL POWER MOSFETS IRFWZ44/40 IRFIZ44/40 FEATURES • • • • • • • D!-PAK Lower R d sio n Improved Inductive Ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

Contextual Info: 5V, 1A Linear Regulator with RESET and ENABLE Description The CS-8121 is a 5V, 1A precision linear regulator with two microprocessor compatible control functions and pro­ tection circuitry included on chip. The composite NPN-PNP output pass tran­ sistor assures a lower dropout voltage

D0233

Abstract: 250JUA 250M IRFS340 IRFS341 Tj-25DC
Contextual Info: N-CHANNEL POWER MOSFETS IRFS340/341 FEATURES • Lower R d s i o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

TOWA Electrolytic capacitor

Abstract: smd JSs smd JSs 13 ttf 103 english CS-8141DW24 CS-8140DW24 CS-8140T7 CS-8140THA7 CS-8140TV7 104 100 ncc capacitor
Contextual Info: CS-8140/1 C S -8 1 4 0 /1 5V, 500mA Linear Regulator with ENABLE, RESET, and Watchdog Description The CS-8140 is a 5V W atchdog R egulator w ith p ro tectio n circuitry a n d three logic control functions th a t allow a m icroprocessor to control its o w n

Contextual Info: M OSFET J 'ì * ? • Wfé\f->£IH 7 x>/\> .*>bg> Power MOSFET N-Channel, Enhancem ent ty p e O U T L I N E D IM E N S IO N S 2SK1195 230V 1.5A ■ R A T IN G S A b s o lu te M axim um R a tin g s m s Ite m te Ife \ar Conditions y- Symbol « ÏF S JE S to ra g e T e m p e ra tu re

rc4200 raytheon

Abstract: rc4200 rm4200 analog multipliers
Contextual Info: RC4200 RAYTHEON/ HE D I • 75^73^0 G Ü D tm S 3 | ■ Special Functions S EM IC O N D U C T O R T ~ ? 3 ' ^ ^ RC4200 Analog Multiplier over the full temperature range. This nonlinearity compensation combined with the low gain and offset drift inherent in a well designed

DC3000L

Abstract: real clock timer switch m08e 24-HOUR push pull lcd
Contextual Info: MODULE DIMENSIONS DIMENSIONS IN MM * CHARACTER HEIGHT-12.00m m 0 .4 7 2 in ch TRIMMER FOR ACCURACY ADJUSTMENT (PRESET) 6 0 .0 0 ± 0 .2 0 I 1,60±0.1 0 6 .5 0 ± 0 .2 0 FRO N T V IEW FEATURES • 1 2 / 2 4 h o u r LCD clock m o d ule s • Hour, m in u te and second

MM4220DF/MM5220DF

Abstract: mm5221 MM4240 DS8807 MM5017 54S287 MM1402a equivalent transistor bf 175 MM74C920 MM5061
Contextual Info: Edge Index by Product Family NATIONAL This is National's first Memory handbook containing information on MOS and Bipolar Memory Components, Systems, Application Notes and Support Circuits. For detailed information on Interface Circuits and other major product lines, contact a National sales office, representative, or distributor.

2N5401S

Contextual Info: SEMICONDUCTOR TECHNICAL DATA 2N5401S EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES • High Collector Breakdwon Voltage : V cbo=-160V, V CEo=-150V •3 MAXIMUM RATINGS Ta=25°C RATING UNIT Collector-Base Voltage

Contextual Info: V 6915 DUAL Two Channel Level Shifter with High Noise Immunity Features • DUAL two bit wide with 2 separated OE pin for bus capability ■ Schmitt Trigger on the inputs ■ High noise immunity ■ 4 separated Input / Output Power Supplies ■ Fully operational from 1.5 V to 10 V

transistor TT 2146

Abstract: equivalent for transistor tt 2146 equivalent of transistor tt 2146 ht 2810 TT 2146 sanyo fm front end ta 31272 fn csc 2315 stm stt 128 acrx
Contextual Info: Ordering number: EN3127 _ C MOS LSI N °3127 I_LC5805 I SINGLE-CHIP 4-BIT MICROCOMPUTER yiyrhLco d r i v e r The LC5805 is a C-MOS 4-bit microcomputer that operates on low voltage, very low current and contains LED drivers.

2N5401C

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KEC KOREA ELECTRONICS CO.,LTD. 2N5401C EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES • High Collector Breakdwon Voltage : V Cbo=-160V , V Ceo = -150V • Low Leakage Current.

SSD2009

Abstract: TP150 2TS01
Contextual Info: DUAL N-CHANNEL POWER MOSFETS SSD2009 FEATURES • • • • • • • 8SO IC Lower Rds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability

SL651B

Contextual Info: SL650/SL651B/C Ä FLESSE Y W Sem iconductors. SL650B&C SL651B&C MODULATOR/PHASE LOCKED LOOP CIRCUITS FOR MODEMS T h e S L 6 5 0 /1 are v e rs a tile in te g ra te d c irc u its capa ble o f p e rfo rm in g PAM, all th e SCAM , c o m m o n m o d u la tio n fu n c tio n s A M ,

Contextual Info: _LT1352/LT1353 r r u n m TECHNOLOGY Dual and Q uad 250nA, 3MHz, 200V/jas O perational Amplifiers K R T U IK S D C S C R IP T IO n • 3MHz Gain Bandwidth ■ 200V/ijs Slew Rate ■ 250|jA Supply Current per Amplifier The LT 1352/LT1353 are dual and quad, very low power,

614L

Abstract: step down Voltage Regulator 230 volt to 150 volt
Contextual Info: 5V, 300mA Linear Regulator with RESET and ENABLE D escription The CS-8120 is a 5V, 300mA precision linear regulator with two microproces­ sor compatible control functions and protection circuitry included on chip. The composite NPN-PNP output pass transistor assures a lower dropout volt­

550MH

Abstract: IGT6D10 IGT6E10
Contextual Info: Preliminary 26.4 4/85 IGT6D10,E10 c a r ' T R M u s T O i i 10 AMPERES 400,500 VOLTS EQUIV. FId S ON = 0.27 Í1 Insulated Gate Bipolar Transistor This IGT Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device

S8251

Abstract: 82S11 56267R signetics 82S1 82S10 82S111 N82S10 A4T10 N82S11F
Contextual Info: Signetics Memories - Bipolar Ram N82S10, N82S110, 82S11, 82S111 — 1024 Bit Bipolar Ram C O N N E C TIO N D IA G R A M G E N E R A L D E SC R IPTIO N The 8 2 S 1 0 /1 1, w ith a typ ic a l access tim e o f 30ns, is ideal fo r cache b u ffe r app lica tions and fo r systems requiring very

tt 2144

Abstract: Transistor TT 2144 tt-2144 tt2144 diagram transistor tt 2140 Transistor TT 2140 AL 2450 dv circuit diagram alarm SL DIALER VSS240 LC5850
Contextual Info: SAim o F LC5850 No.1318F C MOS LSI SIN G LE CHIP 4-BIT MICROCOMPUTER WITH LCD D R IV E R i 77 / > / / The LC585G is a C-MOS 4 -b it m icro com pu ter th a t operates on lo w v o lta g e ,/e /y s m ^ c u r r |p t and ^è jita in s LCD drivers. It contains a 4 -b it parallel processing ALU, program m em oryfiiO M , . ^ i ^ g | ^ j r y RAM, many

Contextual Info: r j L i n ç A ü _ LT1372/LT1377 TECHNOLOGY 500kHz and 1MHz High Efficiency 1.5A Switching Regulators FCRTUR6S DCSCRIPTIOn • Faster Switching with Increased Efficiency ■ Uses Small Inductors: 4.7|oH ■ All Surface Mount Components ■ Only 0.5 Square Inch of Board Space

Contextual Info: I X Y S CORP lflE D • 4bñb25b 0000L.31 □ ■ □IX Y S IX TE 9N 65X 4 MAXIMUM RATINGS PER DEVICE IXTE9N65X4 Unit Parameter Sym. Drain-Source Voltage (1) Vd ss 650 Vdc Vd g r 650 Vdc Vg s ±20 Vdc Vg s m ±30 V Drain-Gate Voltage (R g s = I.OMft) (1)