BSV78
Abstract: bsv80 BSV79 15-HA
Contextual Info: 711082b O O L ^ S a b04 I PH IN BSV78 to 80 A N-CHANNEL FETS Silicon symmetrical n-channel junction field-effect transistors in TO-18 metal envelopes with the gate connected to the case. The transistors are intended for switching applications. The devices have the
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c38 transistor
Abstract: PHILIPS 4330 030 36300 transistor tt 2222 c39 transistor L33 TRANSISTOR TT 2222 npn 4330 030 36 ferroxcube FERROXCUBE 4330 b3171 transistor c37
Contextual Info: t m 7110821, D0b31t,4 m BIPHIN Philips Semiconductors_ _ . . bSE T> PHILIPS INTERNATIONAL UHF push-pull power transistor FEATURES • Double input and output matching for easy matching and high gain QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter test circuit.
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d0b31tblv948ot262a2mrc117+112x100c38 transistorphilips 4330 030 36300transistor tt 2222c39 transistorl33 transistortt 2222 npn4330 030 36 ferroxcubeferroxcube 4330b3171transistor c37
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LTD262
Abstract: display 7-segment LTD262R-12 Philips 3.5 digit 7 segment lcd display
Contextual Info: PHILIPS INTERNATIONAL L n r * _ D Philips Components_ • 711082b Q Q S ? ^ uuoruTU *1b 3 IPHIN LTD262 Data sheet status Product specification date of issue July 1990 Liquid crystal display DEVICE DESCRIPTION The LTD262 is an 8-digit, 7-segment multi-function LCD.
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711082bltd262iec134ltd262r-12+4ltd262r-22ltd262f-22display 7-segmentphilips 3.5 digit 7 segment lcd display
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1H104K
Abstract: 8T139 1H104 C1608JB 1H222K MB39A110 8550 SOT-23 PACKAGE C3216JB C220 MCH3307
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS04-71108-1E ASSP for Power Supply Applications Evaluation Board MB39A110 • DESCRIPTION The MB39A110 evaluation board is a surface mount circuit board with four channels of down conversion and up/ down conversion circuits. The internal structure consists of 2 channels of step-down synchronous rectification
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ds04-71108-1emb39a110f03111h104k+88t1391h104c1608jb1h222k8550 sot-23 packagec3216jbc220mch3307
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m02 marking amplifier
Abstract: m02 marking transistor m02 marking gain marking 550 SOT143 PHILIPS 550 SOT143 sot143 code marking MS SS MARKING CODE BF901 BF901R
Contextual Info: Philips Semiconductors 711082b Q0 t i7 5 1 7 4 b fl IH P H IN Product specification Silicon n-channel dual gate MOS-FETs FEATURES RPQni. ncom a BF901, BF901R QUICK REFERENCE DATA • Intended for low voltage operation SYMBOL TYP. MAX. UNIT drain-source voltage
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7110flsbbf901bf901rot143+8ot143rm02 marking amplifierm02 marking transistorm02 marking gainmarking 550 sot143philips 550 sot143sot143 code marking msss marking code
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IEC134
Abstract: TDA8315T avp b44
Contextual Info: INTEGRATED CIRCUITS TDA8315T Integrated NTSC decoder and sync processor Preliminary specification File under Integrated Circuits, IC02 September 1994 Philips Semiconductors PHILIPS PHILIPS 711082b 007607b 267 Preliminary specification Philips Semiconductors
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4count
Abstract: 74F168 24a8 74F169 F169 N74F168D N74F168N N74F169D N74F169N T168
Contextual Info: PHILIPS INTERNATIONAL Philips Som iconductorc-Signetlcs Document No. 653-0350 ECN No. 95942 Date of issue March 3,1989 Status Product Specification 5ôE i 711082t 0051=155 553 B P H I N FAST 74F168, 74F169 Counters 74F168 4-Bit Up/Down Decade Synchronous Counter
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74f16874f169500ns4count+724a8f169n74f168dn74f168nn74f169dn74f169nt168
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HB 100B
Abstract: 1S93 BUK545 BUK545-100B
Contextual Info: PHILIPS INTERNATIONAL bSE D B 711082b OObMSDl Philips Semiconductors bfib H P H I N Product Specification PowerMOS transistor BUK545-100A/B Logic level FET_ _ GEN ER AL DESCRIPTION N-channei enhancement mode logic level field-effeet power
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7110flsbbuk545-100a/b-sot186buk545+4-100ahb 100b1s93buk545-100b
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PCF2104
Abstract: PCF2104X PGA144 C2259
Contextual Info: INTEGRATED CIRCUITS PCF2104 family LCD controller/drivers Objective specification File under Integrated Circuits, IC12 Philips Sem iconductors 71108 2b OOTllô^ 2Û1 This Material Copyrighted By Its Respective Manufacturer 1995 Jul 31 PHILIPS Objective specification
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pcf2104711002bpcf2104xpga144+1c2259
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8t139
Abstract: C3216JB MCH3405 C1608JB mch3307 RLF5018T C220 MB39A110 MCH3408 SB05-05CP
Contextual Info: FUJITSU MICROELECTRONICS DATA SHEET DS04-71108-1Ea ASSP for Power Supply Applications Evaluation Board MB39A110 • DESCRIPTION The MB39A110 evaluation board is a surface mount circuit board with four channels of down conversion and up/ down conversion circuits. The internal structure consists of 2 channels of step-down synchronous rectification
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ds04-71108-1eamb39a1108t139c3216jb+7mch3405c1608jbmch3307rlf5018tc220mch3408sb05-05cp
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t125 switch
Abstract: BUK437-600B
Contextual Info: PHILIPS INTERNATIONAL bSE D E3 711085b OObaSBb 435 B P H I N Philips Semiconductors Product Specification PowerMOS transistor GEN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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7110a2bbuk437-600bt125 switch |
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BUK426-1000A
Abstract: BUK426-1000B BUK426-100
Contextual Info: 7Z39-// Philips Components Data sheet status Product specification date of issue M arch 1991 B U K 426 - 1OO OA/B PowerMOS transistor PHILIPS INTERNATIONAL SkE D • 711082b 004M135 SSI H P H I N GENERAL DESCRIPTION
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buk426-1oooa/b711002bbuk426-1000a+7-1000b-sot199t-39-11k426-10ooa/bbuk426-1000abuk426-1000bbuk426-100
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Transistor BF988
Abstract: BF988 bf988 philips semiconductor PHILIPS MOSFET MARKING philips bf988 dual gate fet MC3344 mosfet 440 mhz dual gate mosfet in vhf amplifier dual gate
Contextual Info: • 711082b QQb7SbM 2Ö4 IPHIN Philips Semiconductors Data sheet status Product specification date of issue October 1990 FEATURES • Short channel transistor with high ratio lYfs • Low noise gain controlled amplifier to 1 GHz. DESCRIPTION Depletion type field-effect transistor
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711082bbf988transistor bf988bf988 philips semiconductor+7philips mosfet markingphilips bf988dual gate fetmc3344mosfet 440 mhzdual gate mosfet in vhf amplifierdual gate
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BDV67d
Abstract: BDV67DF
Contextual Info: Philips Components BDV67AF/67BF/67CF/67DF Data sheet status Product specification date of Issue December 1990 NPN Darlington power transistors philips international 5bE I I_I • 711082b 00433=18 33T BIPHIN T -3 3 -2 ^ PINNING - SOT199 DESCRIPTION
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bdv67af/67bf/67cf/67df711082bot199bdv66af/66bf/66cf/66df+5bdv67afbdv67bfbdv67cfbdv67dfbdv67d
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bgjg
Abstract: transistor T philips 2322 733 BLF542 UFU370 3a0c 2222 030 capacitor philips philips potentiometer 43t transistor 3909
Contextual Info: Philips Semiconductors_ Product specification UHF power MOS transistor PHILIPS INTERNATIONAL FEATURES • • • • • • T " 3 <î?~0 cÎBLF542 5tiE D • 711DflSb 0D43TS4 5T3 ■ PHIN PIN CONFIGURATION High power gain Easy power control
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-0ciblf5420d43ts4ot171pinning-sot171+12mba931mra971bgjgtransistor tphilips 2322 733blf542ufu3703a0c2222 030 capacitor philipsphilips potentiometer43t transistor3909
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black 6 pin chip
Abstract: SDIP32 TDA9170 CJAu
Contextual Info: INTEGRATED CIRCUITS TDA9170 YU V picture improvement processor based on histogram modification Preliminary specification File under Integrated Circuits, IC02 October 1994 Philips Semiconductors PHILIPS PHILIPS V jP 711032b I D07fl220 OTS • Philips Semiconductors
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tda9170711002bd07fl220black 6 pin chip+2sdip32cjau
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74F151
Abstract: 74F151A F251 N74F151AD N74F151AN N74F151D N74F151N
Contextual Info: P H I L IP S I N T E R N A T I O N A L Philips Semiconductors-Signetlcs Document No. 853-1158 ECN No. 95943 Date of issue March 3,1989 Status Product Specification • FEATURES • High speed 8-to-1 multiplexing On chip decoding Multifunction capability Complementary outputs
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SL 100 NPN Transistor
Abstract: blt91 International Power Sources ferroxcube wideband hf choke Philips 4312 020 TRANSISTOR SL 100 of transistor sl 100 sl 100 transistor
Contextual Info: PHILIPS INTERNATIONAL bSE D B 7110fl5Li DOLEb71 0 4^1 • PHIN BLT91/SL _ U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in handheld radio stations in the 900 MHz communications band.
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00l2b71blt91/slot-172d7110fl2b+9d0bsb77sl 100 npn transistorblt91international power sourcesferroxcube wideband hf chokephilips 4312 020transistor sl 100of transistor sl 100sl 100 transistor
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RZ2731B48W
Abstract: USA104 tRANSISTOR 2.7 3.1 3.5 GHZ cw
Contextual Info: 7 3 3 /3 Philips Components Data sheet status Product specification date of Issue June 1992 RZ2731B48W 711002b 5bE D e m itte r e ffic ie n c y . • D iffu s e d e m itte r b a lla s tin g resistors p ro v id in g e x c e lle n t c u rre n t sharing ' 0Ü4L572
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rz2731b48w4l572t-33-13711005b+3004bs77usa104transistor 2.7 3.1 3.5 ghz cw
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KTY87-205
Abstract: philips kty87 KTY87 R40 AH D 2578 HO-22 Silicon temperature sensors
Contextual Info: KTY87-205 PHILIPS INTERNATIONAL SbE D • ?110fl2b □D47D7I1 3T4 ■ PHIN SILICON TEMPERATURE SENSORS The K T Y 8 7 are high precision te m p e ra tu re sensors w ith a positive te m p e ra tu re c o e ffic ie n t o f resistance fo r tem perature measuring and te m perature c o n tro l. In th e te m perature range 10 ° C to 110 ° C th e
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kty87-20547d7tkty87sqd103+6ddh7d63philips kty87r40 ahd 2578ho-22silicon temperature sensors
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vexta
Abstract: TI TV multi band tuner IC Divider QFP44 SDIP42 TDA8742 TDA8742H 0.1 mKF capacitor
Contextual Info: INTEGRATED CIRCUITS & S M U T TDA8742; TDA8742H Satellite sound circuit with noise reduction Product specification Supersedes data of November 1992 File under Integrated Circuits, IC02 October 1994 Philips Semiconductors PHILIPS PHILIPS 7110fl2fc. 0 0 7 6 1 3 4
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tda8742tda8742h7110fl2fciq07fll34+67110fl2bvextati tv multi band tuner ic dividerqfp44sdip420.1 mkf capacitor
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philips zener diode c24
Abstract: SOD-18 philips bzx70 zener diode c43 BZX70 philips zener diode c12 BZX70-C7V5 DIODE BZX70 BZX70-C75 c22 zener philips 43c56
Contextual Info: BZX70 SERIES MAINTENANCE TYPE P H IL IP S J ib E _ p INTERNATIONAL • 711D6Sb 0 am b 7 b ^ h37 M P H I N T - O h l3 REGULATOR DIODES A range o f diffused silicon diodes in plastic envelopes, intended for use as voltage regulator and transi ent suppressor diodes in medium power regulators and transient suppression circuits.
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bzx70711d6sbbzx70-c7v5bzx70-c75+8od-18philips zener diode c24sod-18philips bzx70 zener diode c43philips zener diode c12diode bzx70c22 zener philips43c56
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TG 56369
Abstract: fast diod 5A Ultra Fast Recovery Double Rectifier Diodes BYV32 IEC134 RECTIFIER DIODES PHILIPS 20/TG 56369
Contextual Info: BYV32 SERIES PHILIPS INTERNATIONAL SLE D • 7110a2b Q0413Sfl C 7T ■ P H I N T - ¿ > 3 - 1 ^ ULTRA FAST RECOVERY DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency double rectifier diodes in plastic envelopes, featuring low forward voltage drop, ultra fast reverse recovery times and soft-recovery characteristic. T hey are intended for
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byv327110fl2bgd413sdq413b7+8m2488m1257tg 56369fast diod 5aultra fast recovery double rectifier diodesiec134rectifier diodes philips20/tg 56369
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9632 transistor
Abstract: high gain low capacitance NPN transistor transistor 9632 BFG67W transistor marking CODE S4b transistor equivalent 1047
Contextual Info: Product specification Philips Semiconductors B F G 67W B FG 67W /X ; B F G 67W /X R N PN 8 G H z w id eb an d tra n s isto r M ARKING FEATURES • High power gain TYPE NUMBER • Low noise figure BFG67W V2 • Gold metallization ensures excellent reliability.
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bfg67wbfg67w/xbfg67w/xrot343+6ot343r9632 transistorhigh gain low capacitance npn transistortransistor 9632transistor marking code s4btransistor equivalent 1047
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