6KA TRANSISTOR Search Results

M306KAFCLRP

Abstract: M306KA ST PS20 datasheet TQFP144 DIMENSION 6ka transistor S4d2 Xa2 TRANSISTOR 16MHZ M306K7F8LRP PWM401
Contextual Info: M16C/6KA Group REJ03B0100-0100Z Rev.1.00 Jul 16, 2004 SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER Description Description The M16C/6KA group of single-chip microcomputers are built using the high-performance silicon gate CMOS process using a M16C/60 Series CPU core and are packaged in a 144-pin plastic molded QFP.

M306KAFCLRP

Abstract: S4d2 16MHZ M306K7F8LRP m306kaf M306KA
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

IGBT 1500

Abstract: der FZ 1600 R 12 KF4 ic 7800 IGBT module FZ 1200
Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FZ 1200 R 16 KF4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection (to be done) VWK Apr. 1997

ic 7800

Abstract: 16KF4
Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FZ 1200 R 16 KF4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection (to be done) VWK Apr. 1997

PP GP30

Abstract: Power Concepts 6KA24 diode Intertec Communications
Contextual Info: AC LINE D - DIVERTER Z - IMPEDANCE C - CLAMP Fig. 4 Fig. 5 G eneral topology for a protection network C ircuit providing a high level o f protection with only .5 ohm impedance the 77 volt spike appears across only one capacitor; with 3000A of input current the

6ka transistor

Abstract: IGBT 1500 ic 7800 R17KF4
Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FZ 1200 R 17 KF4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection (to be done) VWK Apr. 1997

Contextual Info: IRG7CH37K10EF INSULATED GATE BIPOLAR TRANSISTOR C VCES = 1200V IC Nominal = 15A TJ(max) = 175°C G VCE(on) typ = 1.9V @ IC= 15A E n-channel Applications • Medium Power Drives  UPS  HEV Inverter  Welding G C E Gate Collector Emitter Features

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FZ 1200 R 16 KF4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection (to be done) VWK Apr. 1997

IGBT 1500

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FZ 1200 R 16 KF4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection (to be done) VWK Apr. 1997

EME-6300H

Abstract: 6300H mos die CY7C1399 CY7C197 CY7C199
Contextual Info: Qualification Report June, 1995 - QTP# 94465 Version 1.0 RAM2.8 TRANSISTOR FOR RAM2.5 PROCESS PRODUCT DESCRIPTION for qualification Information provided in this document is intended for generic qualification and technically describes the Cypress part supplied:

Contextual Info: MITSUBISHI HVIGBT MODULES Prepared by S. Iura Revision: 1.1 Approved by H. Yamaguchi : Apr. 2009 CM1200HC-90R th 4 -Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1200HC-90R ● IC ………………………

CM1200HC-90R

Abstract: 6ka transistor
Contextual Info: Prepared by S. Iura Approved by H. Yamaguchi : Apr. 2009 MITSUBISHI HVIGBT MODULES Revision: 1.1 CM1200HC-90R th 4 -Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1200HC-90R ● IC ………………………

Contextual Info: HFA1100 H 1120 H A R R IS S E M I C O N D U C T O R Ultra High-Speed Current Feedback Amplifier September 1992 Features Description • Low Distortion 30MHz . -56dBc The HFA1100, 1120 are a family of high-speed, wideband, fast settling current feedback amplifiers. Built with Harris' proprietary

TRANSISTOR M 1061

Abstract: transistor h 1061 transistor 1061 TR 1061 1061 transistor CM1000HC-66R
Contextual Info: MITSUBISHI HVIGBT MODULES Prepared by S. Iura Revision: 1.0 Approved by H. Yamaguchi : Jun. 2009 CM1000HC-66R th 4 -Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1000HC-66R N/A ● IC ………………………

Transistor GE 67

Contextual Info: MITSUBISHI HVIGBT MODULES ARY LIMIN . ation nge. pecific to cha final s subject a t o re is is nic limits a e: Th tr Notice parame Som CM1000E4C-66R PRE 4th-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE

Contextual Info: < HVIGBT MODULES > CM1200HG-90R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules CM1200HG-90R z z z z z z IC•·························································

CY7C106A

Abstract: 84-1MISR4 CY7C109 R28 transistors
Contextual Info: Cypress Semiconductor Qualification Report QTP# 97253, VERSION 1.0 August, 1997 1 Meg SRAM, R28 Technology, Fab 4 Qualification CY7C106A 256K x 4 Static RAM CY7C109 128K x 8 Static RAM Cypress Semiconductor 1 Meg SRAM, R28 Technology, Fab 4 Devices:CY7C106A/CY7C109

Sample and Hold Amplifiers

Abstract: HA5350 5VP4
Contextual Info: & tt" HA5350, HA5351 PRELIMINARY Ultra Fast 50ns Sample and Hold Amplifiers March 1993 Features Description • Ultra Fast Acquisition. 50ns The HA5350/51 are ultra-fast sample/hold amplifiers designed for a wide range of applications including A/D conversion,

ha5350

Abstract: HA5350IP
Contextual Info: U U HA5350, HA5351 h a rr is S E M I C O N D U C T O R * W W W PRELIMINARY W 7 • » W W W M Ultra Fast 50ns Sample and Hold Amplifiers March 1993 Description Features • Ultra Fast Acquisition. 50ns •

Contextual Info: HARRIS SEHICON] SECTOR S E M I C O N D U C T O R LIE » • M3 0 2 P 7 1 0 D4 h T 42 G3 1 HHAS HA5350, HA5351 * ■ PRELIMINARY mm ■ W ■ Ultra Fast 50ns) Sample and Hold Amplifiers March1993 Features Description • Ultra Fast Acquisition. 50ns

video out put switcher

Abstract: 4600CB
Contextual Info: h a r r i s H S E M I C O N D U C T O R K M A 4 6 480MHz, Video Buffer with Output Disable November 1996 Features Description • Low Power Dissipation. 105mW The HA4600 is a very wide bandwidth, unity gain buffer ideal

Contextual Info: HARRIS S E M I C O N D U C T O R u a 4 6 0 0 Ê M 480MHz, Video Buffer with Output Disable November 1996 Description Features • Low Power D is s ip a tio n . 105mW • Sym metrical Slew R a te s . 1700V/ns

CM1000E4C-66R

Contextual Info: 三菱半導体〈HVIGBTモジュール〉 CM1000E4C-66R 開発中 4th-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor モジュール 大電力スイッチング用 絶縁形 CM1000E4C-66R ¡IC …………………………………………… 1000A

Contextual Info: m U U HA4244 HARRIS S E M I C O N D U C T O R 480MHz, 1 x 1 Video Crosspoint Switch with Synchronous Enable November 1996 Description Features • Low Power D is s ip a tio n . 105mW • Sym metrical Slew R a te s . 1700V/^s