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    Infineon Technologies AG

    Infineon Technologies AG FZ1000R16KF4NOSA1

    Insulated Gate Bipolar Transistor Module
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics FZ1000R16KF4NOSA1 1 1
    • 1 $477.30
    • 10 $477.30
    • 100 $448.66
    • 1000 $420.02
    • 10000 $420.02
    		Buy Now

    Infineon Technologies AG FF400R16KF4NOSA1

    Insulated Gate Bipolar Transistor, 400A I(C), 1600V V(BR)CES, N-Channel
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics FF400R16KF4NOSA1 42 1
    • 1 $1007.68
    • 10 $1007.68
    • 100 $947.22
    • 1000 $886.76
    • 10000 $886.76
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    Vyrian FF400R16KF4NOSA1 4,769
    • 1 -
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    • 100 -
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    Infineon Technologies AG FD400R16KF4

    Insulated Gate Bipolar Transistor Module
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics FD400R16KF4 26 1
    • 1 $405.67
    • 10 $405.67
    • 100 $381.33
    • 1000 $356.99
    • 10000 $356.99
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    Infineon Technologies AG FZ800R16KF4NOSA1

    Insulated Gate Bipolar Transistor, 800A I(C), 1600V V(BR)CES, N-Channel
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Vyrian FZ800R16KF4NOSA1 12,406
    • 1 -
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    Infineon Technologies AG FZ1200R16KF4_S1

    Insulated Gate Bipolar Transistor, 1200A I(C), 1600V V(BR)CES
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Vyrian FZ1200R16KF4_S1 478
    • 1 -
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    16KF4 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IGBT FZ 800

    Abstract: IGBT FZ 1200 IGBT FZ 1000 FZ 5.1 FZ 800 R 12 KF6
    Contextual Info: V ces V O T ype ICRM VcEsat ton ts tf RthJC Tvj max > IGBT High Power Modules A V MS Tvj=25°C MS TVj=25°C ° c /w °c Tvj=25°C MS Tvj=25°C typ. typ. typ. typ. 0,0570 0,0460 150 150 ; 1H9 0,90 0,25 0,15 ! ÌH2 0,09 0,15 0,15 0,13 0,20 0,20 0,15 0,09 0,15


    OCR Scan     		16kf4r17kf4igbt fz 800igbt fz 1200+3igbt fz 1000fz 5.1fz 800 r 12 kf6 PDF

    IGBT FZ 1200 kf1

    Abstract: 600R12KF4
    Contextual Info: IGBT High Power Modules Type V C ES lc I CRM V cE sa t ton ts tf R ,h jc tv , max V A A tp = 1 ms V MS MS °c/w °c tvj=25°C typ. |js tvj=25°C typ. tvj=25°C typ. tvj=25°C typ. o u tlin e p e r a rm D ual m o d u le s ▼ FF 400 R 12 KF4 1200 400 800 2,7


    OCR Scan     		600r16kf400021ssigbt fz 1200 kf1600r12kf4 PDF

    FS150R12KF4

    Abstract: IGBT module FZ 1200 FF 400 R 14 FS200R12KF4 400R12K DIODE e2l IGBT module FZ 1200 R17kf4 igbt F4 400 R 12 KF4 IGBT FZ 800R12kF4 FZ 51
    Contextual Info: IGBT High-Power Module Type Range status o f sam ple availability 4 □ production • prototype. + ENG sam ples. BMOaai? 00Q25G4 fill # 1 . Q '9 8 O 2. Q '98 IGBT High Power Modules T ype Dual modules FF200R 33KF1 FF 400 R 12 KF4 FF 400 R 16 KF4 FF 400 R 1 7 K F 4


    OCR Scan     		140x73mm140x130140x1903m03ht+1100g2s07fs150r12kf4igbt module fz 1200ff 400 r 14fs200r12kf4400r12kdiode e2ligbt module fz 1200 r17kf4igbt f4 400 r 12 kf4igbt fz 800r12kf4fz 51 PDF

    FZ 1800 R17 KF4

    Abstract: IGBT FZ 1800 KF6C FZ 800 R 12 KF6 IGBT FZ 1200 IGBT FZ 1000 FZ 1800 R 17 KF4 FD 1200 igbt F4 400 R 12 KF4 IGBT FF 300 R 12 KF2
    Contextual Info: Click on outline no. IGBT High Power Modules Type * Eon / VCES Ic A VCEsat RthJC outline Eoff V V °C/W Tvj=25° mWs per arm C typ. Tvj=125° C typ Dual modules Type VCES Ic A V VCEsat Eon / Eoff RthJC outline mWs V °C/W Tvj=25° Tvj=125° per arm C typ.


    Original     		12kl4cfz 1800 r17 kf4igbt fz 1800kf6c+7fz 800 r 12 kf6igbt fz 1200igbt fz 1000fz 1800 r 17 kf4fd 1200igbt f4 400 r 12 kf4igbt ff 300 r 12 kf2 PDF

    IGBT FZ 1200 kf1

    Abstract: 600R16KF4 bs 1600
    Contextual Info: IGBT High Power Modules Type V C ES lc I CRM V cE sa t ton ts tf R ,h jc tv , max V A A tp = 1 ms V MS MS °c/w °c tvj=25°C typ. |js tvj=25°C typ. tvj=25°C typ. tvj=25°C typ. o u tlin e p e r a rm D ual m o d u le s ▼ FF 400 R 12 KF4 1200 400 800 2,7


    OCR Scan     		600r16kf400021ssigbt fz 1200 kf1bs 1600 PDF

    IT8502E

    Abstract: ITE IT8502E ITE 8502E IT8502 LKN 304 PN alc269 SLG8SP510T P2003EVG 8502E ITE8502E
    Contextual Info: Preface Notebook Computer M810L/M811L Service Manual Preface I Preface Notice The company reserves the right to revise this publication or to change its contents without notice. Information contained herein is for reference only and does not constitute a commitment on the part of the manufacturer or any subsequent vendor. They assume no responsibility or liability for any errors or inaccuracies that may appear in this publication nor are


    Original     		m810l/m811lm815ltjg-533-s--3216qbc-+10it8502eite it8502eite 8502eit8502lkn 304 pnalc269slg8sp510tp2003evg8502eite8502e PDF

    IGBT FZ 1200

    Abstract: IGBT module FZ 1200 IGBT FZ 800 R16KF4 IGBT FZ 1200 kf1 IGBT FZ 1800 igbt F4 400 R 12 KF4 IGBT FZ 1200 R 33 KF1 IGBT FZ 600 IGBT module FZ 400
    Contextual Info: IGBT High-Power Module Type Range status o f sam ple availability 1 □ p r o d u c t io n • ■ prototype. + ENG sam ples. 34032*17 0 0 0 2 5 0 4 fill I This Material Copyrighted By Its Respective Manufacturer # 1 . Q '9 8 Q 2. Q '98 ♦ ♦ Dual modules


    OCR Scan     		140x73mm140x190000220b00d2207+10igbt fz 1200igbt module fz 1200igbt fz 800r16kf4igbt fz 1200 kf1igbt fz 1800igbt f4 400 r 12 kf4igbt fz 1200 r 33 kf1igbt fz 600igbt module fz 400 PDF

    IGBT FZ 800

    Abstract: 12KL4C 12KF4 IGBT FZ 1200 R 33 KF1 R12KL4C IGBT FZ 1200 IGBT FZ 1000 0285 007 026 FF R 1200 FZ 800 R 12 KF6
    Contextual Info: IGBT High Power Modules Type V ces Ic A V IGBT-Hochleistungsmodule V cE sat V E o n / E o ff R th J C Tvj=25°c mWs °c/w ty p . T „ j= 1 2 5 ° C per ty p . a rm o u t lin e Type V cE S Ic A V * VcEsat V E o n / E o ff R fh J C T„j=25°C mWs °c/w ty p .


    OCR Scan     		ff400r12kf412kl4c16kf4+8igbt fz 800igbt fz 1200 r 33 kf1r12kl4cigbt fz 1200igbt fz 10000285 007 026ff r 1200fz 800 r 12 kf6 PDF