68A CAP Search Results

Contextual Info: rEHEPATOPHblM TPMOfl ry-68A r eHepaTopHbiM TRIODE Tpuo,q ry-68A npeflHa3HaneH pa60Tbi b KanecTBe ycwiMTe/iH mol^ hoctm Ha nacTOTax ,qo 30 MI"m b CTaqnoHapHbix nepeflaiounnx ycTpoMCT- The ry-68A triode is used for power amplification at up to 30 MHz in stationary RF transmitters.

k 68a

Abstract: ScansU9X26
Contextual Info: rEHEPATOPHblM TPMOfl ry-68A TRIODE r eHepaTopHbiM Tpuo,q ry-68A npeflHa 3 H a n e H K a n e c T B e ycwiMTe/iH m o l ^ h o c t m H a nac T O T a x ,qo 30 MI"m b CTaqnoHapHbix nepeflaiounnx ycTpoMCTBax. pa 60Tbi b The ry-68A triode is u sed for p o w e r amplification at

94N50

Contextual Info: Advance Technical Information IXFN94N50P2 PolarP2TM HiPerFETTM Power MOSFET VDSS ID25 = = 500V 68A  55m 250ns RDS on   trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC E153432 S Symbol Test Conditions Maximum Ratings

PD67

Abstract: cp 68a Capacitor 68A diode cp 68a PD6600A uPD69 6868A 67a68 cp 68a diode ASR-11 technical specifications
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD67, 67A, 68, 68A, 69 4-BIT SINGLE-CHIP MICROCONTROLLER FOR INFRARED REMOTE CONTROL TRANSMISSION DESCRIPTION With their 2.0 V low-voltage operation, carrier generator for infrared remote control transmission, standby release

VMEbus interface handbook

Abstract: transistors BC 543 Cypress VMEbus Interface Handbook diode 68A VAC068 VIC068A LA18 14 pin ld18 transistor BC 147 FCT245
Contextual Info: fax id: 5600 1V AC0 68A VAC068A VMEbus Address Controller Features — Supports unaligned transfers • Optional companion part to VIC068A • Implements master/slave VMEbus interface in conjunction with the VIC068A • Complete VMEbus and I/O DMA capability for a 32-bit

100n60

Abstract: IXXR100N60B3H1
Contextual Info: Advance Technical Information IXXR100N60B3H1 XPTTM 600V GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) (Electrically Isolated Tab) = = ≤ = 600V 68A 1.80V 150ns Extreme Light Punch Through IGBT for 10-30kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings

diode sg 64

Abstract: SG5774AJ SG5772J SG25768 sf 819 d 1N5772 JANTX 1N5768 SG25770J
Contextual Info: , SG5768/68A SG5770/70A, SG5772/72A, SG5774/74A SG25768, SG25770, SG6496/96A DIODE ARRAY CIRCUITS SILICON GENERAL LINEAR IN TEGRATED CIRCUITS DESCRIPTION FEATURES The Silicon General series of diode arrays feature high breakdown, high speed diodes in a variety of configurations.

Contextual Info: APTM100A12ST Phase leg Schottky Series & parallel diodes MOSFET Power Module VDSS = 1000V RDSon = 120mΩ Ω max @ Tj = 25°C ID = 68A @ Tc = 25°C Application • • • Motor control Switched Mode Power Supplies Uninterruptible Power Supplies Features

Contextual Info: Advance Technical Information XPTTM 600V GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXXR100N60B3H1 (Electrically Isolated Tab) = = ≤ = 600V 68A 1.80V 150ns Extreme Light Punch Through IGBT for 10-30kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings

Contextual Info: AP9412AGH RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower Gate Charge D BVDSS 30V RDS ON Simple Drive Requirement Fast Switching Characteristic ID G 6m 68A S Description Advanced Power MOSFETs from APEC provide the designer with

9974AGH

Abstract: AP9974AGH 220E-2 AP9974 TO252 rthjc N-CHANNEL ENHANCEMENT MODE POWER MOSFET to-252
Contextual Info: AP9974AGH RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 60V ▼ Single Drive Requirement RDS ON 12mΩ ▼ Surface Mount Package ID ▼ Low Gate Charge D 68A G S Description Advanced Power MOSFETs from APEC provide the

Contextual Info: AP9974AGP RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low Gate Charge BVDSS D Single Drive Requirement RDS ON Fast Switching Characteristic ID 60V 12m 68A G S Description Advanced Power MOSFETs from APEC provide the

Contextual Info: AP9974AGH-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low Gate Charge BVDSS D 60V RDS ON Single Drive Requirement Surface Mount Package ID G RoHS Compliant & Halogen-Free 12m 68A S Description Advanced Power MOSFETs from APEC provide the

Contextual Info: Advance Technical Information IXTT68P20T IXTH68P20T TrenchPTM Power MOSFETs VDSS ID25 RDS on P-Channel Enhancement Mode Avalanche Rated = = ≤ - 200V - 68A Ω 55mΩ TO-268 (IXTT) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

Contextual Info: Advance Technical Information TrenchPTM Power MOSFETs VDSS ID25 IXTT68P20T IXTH68P20T RDS on P-Channel Enhancement Mode Avalanche Rated = = ≤ - 200V - 68A Ω 55mΩ TO-268 (IXTT) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

AP9412AGP

Contextual Info: AP9412AGP RoHS-compliant Product Advanced Power Electronics Corp. ▼ Lower Gate Charge N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic BVDSS 30V RDS ON 6mΩ ID G 68A S Description Advanced Power MOSFETs from APEC provide the designer with

9412agh

Abstract: AP9412AGH 9412A
Contextual Info: AP9412AGH RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic BVDSS 30V RDS ON 6mΩ ID G 68A S Description Advanced Power MOSFETs from APEC provide the designer with

9412GI

Abstract: AP9412GI 9412g 220CFM
Contextual Info: AP9412GI RoHS-compliant Product Advanced Power Electronics Corp. ▼ Fast Switching Performance N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Single Drive Requirement ▼ Full Isolation Package BVDSS 30V RDS ON 6mΩ ID 68A G S Description Advanced Power MOSFETs from APEC provide the designer with

AP9412AGI

Contextual Info: AP9412AGI RoHS-compliant Product Advanced Power Electronics Corp. ▼ Fast Switching Performance N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Single Drive Requirement ▼ Full Isolation Package BVDSS 30V RDS ON 6mΩ ID 68A G S Description Advanced Power MOSFETs from APEC provide the designer with

AP9974

Contextual Info: AP9974AGP RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 60V ▼ Single Drive Requirement RDS ON 12mΩ ▼ Fast Switching Characteristic ID ▼ Low Gate Charge D 68A G S Description Advanced Power MOSFETs from APEC provide the

BSW68A 1990

Abstract: bsw68a
Contextual Info: N AMER PHILIPS/DISCRETE LTE D • bbS3^31 00273^1 bSfl B A P X l BSW66A to 68A SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors primarily intended for general purpose industrial and switching applications. QUICK REFERENCE DATA BSW66A BSW67A BSW68A VCBO

68c DIODE

Contextual Info: N AtlER PHILIPS/DISCRETE [i bb53131 QQEODQ6 A • BDX68; 68A BDX68B; 68C E5E D J V r- 33-31 DARLINGTON POWER TRANSISTORS P-N-P Darlingtons for audio output stages and general amplifier and switching applications. In a TO-3 envelope. N-P-N complements are BDX69, BDX69A, BDX69B and BDX69C.

Contextual Info: STK10C 68A CMOS/SNOS nvSRAM High Performance 8K x 8 Non-Volatile Static RAM S IÌT ÌT G H PRELIMINARY FEATURES DESCRIPTION • • • • • • • • • • • • • • The Simtek STK10C68A is a fast static RAM 35, 45 and 55ns , with a non-volatile electrically-erasable PROM

Contextual Info: Ordering number : ENA1908B BMS3004 P-Channel Power MOSFET http://onsemi.com –75V, –68A, 8.5mΩ, TO-220F-3SG Features • • • ON-resistance RDS on 1=6.5mΩ (typ.) Input capacitance Ciss=13400pF (typ.) 4V drive TO-220F-3SG Specifications Absolute Maximum Ratings at Ta=25°C