68A CAP Search Results

Contextual Info: rEHEPATOPHblM TPMOfl ry-68A r eHepaTopHbiM TRIODE Tpuo,q ry-68A npeflHa3HaneH pa60Tbi b KanecTBe ycwiMTe/iH mol^ hoctm Ha nacTOTax ,qo 30 MI"m b CTaqnoHapHbix nepeflaiounnx ycTpoMCT- The ry-68A triode is used for power amplification at up to 30 MHz in stationary RF transmitters.

k 68a

Abstract: ScansU9X26
Contextual Info: rEHEPATOPHblM TPMOfl ry-68A TRIODE r eHepaTopHbiM Tpuo,q ry-68A npeflHa 3 H a n e H K a n e c T B e ycwiMTe/iH m o l ^ h o c t m H a nac T O T a x ,qo 30 MI"m b CTaqnoHapHbix nepeflaiounnx ycTpoMCTBax. pa 60Tbi b The ry-68A triode is u sed for p o w e r amplification at

94N50

Contextual Info: Advance Technical Information IXFN94N50P2 PolarP2TM HiPerFETTM Power MOSFET VDSS ID25 = = 500V 68A  55m 250ns RDS on   trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC E153432 S Symbol Test Conditions Maximum Ratings

PD67

Abstract: cp 68a Capacitor 68A diode cp 68a PD6600A uPD69 6868A 67a68 cp 68a diode ASR-11 technical specifications
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD67, 67A, 68, 68A, 69 4-BIT SINGLE-CHIP MICROCONTROLLER FOR INFRARED REMOTE CONTROL TRANSMISSION DESCRIPTION With their 2.0 V low-voltage operation, carrier generator for infrared remote control transmission, standby release

VMEbus interface handbook

Abstract: transistors BC 543 Cypress VMEbus Interface Handbook diode 68A VAC068 VIC068A LA18 14 pin ld18 transistor BC 147 FCT245
Contextual Info: fax id: 5600 1V AC0 68A VAC068A VMEbus Address Controller Features — Supports unaligned transfers • Optional companion part to VIC068A • Implements master/slave VMEbus interface in conjunction with the VIC068A • Complete VMEbus and I/O DMA capability for a 32-bit

100n60

Abstract: IXXR100N60B3H1
Contextual Info: Advance Technical Information IXXR100N60B3H1 XPTTM 600V GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) (Electrically Isolated Tab) = = ≤ = 600V 68A 1.80V 150ns Extreme Light Punch Through IGBT for 10-30kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings

diode sg 64

Abstract: SG5774AJ SG5772J SG25768 sf 819 d 1N5772 JANTX 1N5768 SG25770J
Contextual Info: , SG5768/68A SG5770/70A, SG5772/72A, SG5774/74A SG25768, SG25770, SG6496/96A DIODE ARRAY CIRCUITS SILICON GENERAL LINEAR IN TEGRATED CIRCUITS DESCRIPTION FEATURES The Silicon General series of diode arrays feature high breakdown, high speed diodes in a variety of configurations.

68A diode

Abstract: k 68a APTM100A12ST
Contextual Info: APTM100A12ST Phase leg Schottky Series & parallel diodes MOSFET Power Module VDSS = 1000V RDSon = 120mΩ max @ Tj = 25°C ID = 68A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies S2 G2 NTC1 NTC2

Contextual Info: APTM100A12ST Phase leg Schottky Series & parallel diodes MOSFET Power Module VDSS = 1000V RDSon = 120mΩ Ω max @ Tj = 25°C ID = 68A @ Tc = 25°C Application • • • Motor control Switched Mode Power Supplies Uninterruptible Power Supplies Features

Contextual Info: AP9974AGS-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower On-resistance BVDSS D Single Drive Requirement RDS ON Fast Switching Characteristic ID RoHS Compliant & Halogen-Free 60V 12m 68A G S Description

Contextual Info: AP78T10GP-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement D Low On-resistance Fast Switching Characteristic 100V RDS ON 14m ID G RoHS Compliant & Halogen-Free BVDSS 68A S Description

Contextual Info: AP9952GP-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement BVDSS D RDS ON Lower On-resistance Fast Switching Characteristic ID G RoHS Compliant & Halogen-Free 70V 12m 68A S Description

NEC HMC-68A

Abstract: UPD67A 68A diode PD6600A PD67 uPD69 6868A asr10 ASR-11 technical specifications 12C7H
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD67, 67A, 68, 68A, 69 4-BIT SINGLE-CHIP MICROCONTROLLER FOR INFRARED REMOTE CONTROL TRANSMISSION DESCRIPTION With their 2.0 V low-voltage operation, carrier generator for infrared remote control transmission, standby release

Contextual Info: Advance Technical Information XPTTM 600V GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXXR100N60B3H1 (Electrically Isolated Tab) = = ≤ = 600V 68A 1.80V 150ns Extreme Light Punch Through IGBT for 10-30kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings

Contextual Info: AP9412AGH RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower Gate Charge D BVDSS 30V RDS ON Simple Drive Requirement Fast Switching Characteristic ID G 6m 68A S Description Advanced Power MOSFETs from APEC provide the designer with

Contextual Info: AP9974AGP-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free BVDSS 60V RDS ON 12mΩ ID G 68A

Contextual Info: AP9412AGP RoHS-compliant Product Advanced Power Electronics Corp. Lower Gate Charge N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS D RDS ON Simple Drive Requirement Fast Switching Characteristic ID G 30V 6m 68A S Description Advanced Power MOSFETs from APEC provide the designer with

9974AGH

Abstract: AP9974AGH 220E-2 AP9974 TO252 rthjc N-CHANNEL ENHANCEMENT MODE POWER MOSFET to-252
Contextual Info: AP9974AGH RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 60V ▼ Single Drive Requirement RDS ON 12mΩ ▼ Surface Mount Package ID ▼ Low Gate Charge D 68A G S Description Advanced Power MOSFETs from APEC provide the

Contextual Info: AP9974AGP RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low Gate Charge BVDSS D Single Drive Requirement RDS ON Fast Switching Characteristic ID 60V 12m 68A G S Description Advanced Power MOSFETs from APEC provide the

Contextual Info: XPTTM 600V IGBT GenX3TM w/ Diode MMIX1X100N60B3H1 Electrically Isolated Tab VCES = 600V IC110 = 68A VCE(sat) ≤ 1.80V Extreme Light Punch Through IGBT for 10-30kHz Switching C G Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR

AP9974

Abstract: AP9974AGH-HF
Contextual Info: AP9974AGH-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Single Drive Requirement ▼ Surface Mount Package ▼ RoHS Compliant & Halogen-Free BVDSS 60V RDS ON 12mΩ ID G 68A S Description

Contextual Info: Preliminary Technical Information VCES = 600V IC110 = 68A VCE sat ≤ 1.35V IXGN72N60A3 GenX3TM 600V IGBT Ultra Low Vsat PT IGBT for up to 5kHz switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR

BY206

Abstract: BSW68A k 68a BSW67A BSW66A Silicon Epitaxial Planar Transistor philips silicon planar epitaxial transistors Philips 1990 LG 68A
Contextual Info: BSW66A to 68A PHILIPS INTERNATIONAL 5bE D m 711002b DD4237Ö bS4 HIPHIN SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors primarily intended for general purpose industrial and switching applications. QUICK R EFER EN C E DATA BSW66A BSW67A BSW68A Collector-base voltage open emitter

Contextual Info: AP9974AGH-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Simple Drive Requirement ▼ Surface Mount Package ▼ RoHS Compliant & Halogen-Free BVDSS 60V RDS ON 12mΩ ID G 68A S Description