67 135 DIODE Search Results

249NQ150

Abstract: 249NQ 249NQ135 249NQ150R IRFP460 D-67 HALF PAK Module
Contextual Info: Bulletin PD-20721 rev. A 06/02 249NQ. R SERIES 240 Amp SCHOTTKY RECTIFIER D-67 Description/ Features Major Ratings and Characteristics Characteristics IF(AV) Rectangular 249NQ.(R) Units 240 A 135 to 150 V 20000 A 0.72 V - 55 to 175 °C waveform VRRM range

129NQ

Abstract: 129NQ135 129NQ150 129NQ150R IRFP460 IRFP460 SWITCHING FREQUENCY
Contextual Info: Bulletin PD-20719 rev. A 03/01 129NQ. R SERIES 120 Amp SCHOTTKY RECTIFIER D-67 Major Ratings and Characteristics Characteristics IF(AV) Rectangular Description/Features 129NQ.(R) Units 120 A 135 to 150 V 10000 A 0.74 V - 55 to 175 °C waveform VRRM range

Contextual Info: Bulletin PD-20721 rev. A 06/02 249NQ. R SERIES 240 Amp SCHOTTKY RECTIFIER D-67 Description/ Features Major Ratings and Characteristics Characteristics IF(AV) Rectangular 249NQ.(R) Units 240 A 135 to 150 V 20000 A 0.72 V - 55 to 175 °C waveform VRRM range

249NQ

Abstract: 249NQ135 249NQ150 249NQ150R IRFP460 irfp
Contextual Info: Bulletin PD-20721 rev. A 06/02 249NQ. R SERIES 240 Amp SCHOTTKY RECTIFIER D-67 Description/ Features Major Ratings and Characteristics Characteristics IF(AV) Rectangular 249NQ.(R) Units 240 A 135 to 150 V 20000 A 0.72 V - 55 to 175 °C waveform VRRM range

Contextual Info: PT16820 OLED Driver IC •       DESCRIPTION The PT16820 is a single-chip CMOS OLED driver/controller for organic light emitting diode dot passive matrix display systems. It consists of 256 segments and 136 commons. The PT16820 communicates with the host

Abb breakover diode

Abstract: BU 3150 cross reference 5SBD 05T1400 20T100 5SBB 20T1200 5SBB 20T1500 20T2500 5SBA 5SBD 05T1300 05t1800
Contextual Info: Breakover Diodes ABB Semiconductors AG • D iffused pnpn structure fired by over­ voltages. Effective protection of thyristors against transients. T hyristor protection by em ergency firing. Housing: Single elem ent Int. structure m > T ole ­ rance V >

745 transistor

Abstract: TRANSISTOR C 1815 varistor 67 135 DIODE
Contextual Info: СПЕЦИФИКАЦИЯ components Varistors Features • Small size, large peak current and high energy Insulated coating with epoxy yellow . Element diameter with 5,7, 10, 14, 20 mm. With safety approval UL1449 (E191293) Applications • Transistor, diode, IС, thyristor or tnac semiconductor protection

75N1

Abstract: 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 42N20 ixtn 44N50 KS 4400 204 3B
Contextual Info: HiPerF ET Power MOSFETs ?D g UE D f N-Channel Enhancement-Mode with Fast Intrinsic Diode Type V DSS max. ► New ► IXFH 76N07-11 ► IXFH 76N07-12 IXFH IXFH IXFH IXFH IXFH 67N10 75N10 42N20 50N20 58N20 V 70 100 200 IXFH 35N30 IXFH 40N30 300 IXFH IXFH

Contextual Info: BAQ133 / 134 / 135 VISHAY Vishay Semiconductors Small Signal Low Leakage Diodes Features • Silicon Planar Diodes • Very low reverse current Applications Protection circuits, time delay circuits, peak follower circuits, logarithmic amplifiers 9612009 Mechanical Data

Contextual Info: BAQ133 / 134 / 135 Vishay Semiconductors Small Signal Switching Diodes, Low Leakage Current Features • Silicon Planar Diodes • Very low reverse current Applications Protection circuits, time delay circuits, peak follower circuits, logarithmic amplifiers

Contextual Info: BAQ133 / 134 / 135 VISHAY Vishay Semiconductors Small Signal Switching Diodes, Low Leakage Current Features • Silicon Planar Diodes • Very low reverse current Applications Protection circuits, time delay circuits, peak follower circuits, logarithmic amplifiers

SP126

Contextual Info: SURFACE MOUNT TRANSISTORS AND DIODES • A pioneer in Surface Mount products, Philips invented the SOT-23 industry standard SM package. Offering full expertise and innovation in Surface Mount technology, Philips has introduced the newest medium-power one-watt

Contextual Info: BAQ133 / 134 / 135 Vishay Semiconductors Small Signal Switching Diodes, Low Leakage Current Features • Silicon Planar Diodes • Very low reverse current Applications Protection circuits, time delay circuits, peak follower circuits, logarithmic amplifiers

d2388

Abstract: D368S EUPEC D 648 S
Contextual Info: Fast rectifier diodes Type V rrm V eupec If r m s m A If s m d /i2dt 10 ms, 10 ms, t, max tvj max kA A2s • If a v m ^ c N°C 34D32T? 0000112 125 ■ upec V TO> rT Ihm R.hjc tv,= tvj max tvj = tyi max tyj = tVJ max 180°el sin. V mO = I f AVM ¡F tv j m ax

RADIOTRON

Abstract: GE SCR 1000 AMP ST-12 1 watt diode 15 Amp current 1000 volts metal diode Scans-0017344
Contextual Info: RADIOTRON 1K6 D U O -D IO D E PENTODE Filament Voltage Current Maximum Overall Lengtft Maximum Diameter Bulb Cap Mounting Position Coated 2.0 0 .1 2 d-c volts amp. 4-15/16" 1-9/16" ST-18 Small Metal Any Base Pin 1-Filament ♦ Pin 2-Plate „ Pin 3-Diode Plate r S

FZD18

Abstract: CB-197 BZW11-27B FZD10 FZD12 FZD15 FZD22 FZD27 FZD33 FZD39
Contextual Info: transient voltage suppressors «TRANSIL» diodes de protection «TRANSIL» Types Bidirec­ tional 1 ms expo. / FZD6V8 FZD8V2 FZD10 FZD12 FZD15 FZD18 FZD22 FZD27 FZD33 FZD39 FZD47 FZD56 FZD62 FZD68 FZD82 FZD100 FZD120 FZD150 FZD180 800 W PF8Z6V8 PF8Z8V2 PF8Z10

Contextual Info: LASERS & MATERIAL PROCESSING I OPTICAL SYSTEMS I INDUSTRIAL METROLOGY I TRAFFIC SOLUTIONS I DEFENSE & CIVIL SYSTEMS Vertical Diode Laser Stacks cw, actively cooled, with collimation, 9xx nm JOLD-x-CAFN-xA Design 2104xxx26 210480326 3 submounts 210480426 (4 submounts)

Contextual Info: BAQ133.BAQ135 VtSHAY ▼ Vishay Telefunken Silicon Planar Diodes Features • Very low reverse current Applications Protection circuits, tim e delay circuits, peak fo llo w er circuits, logarithm ic am plifiers Absolute Maximum Ratings Tj = 2 5 °C P aram eter

abb bov 660

Abstract: BOD 1-04 Abb breakover diode BOV1000-S dsas16u ABB bod 1-11 dsas 5-0 dsas10u DSAS5U dsas
Contextual Info: A B B SEMI CONDUCTORS AG BOD • Breakover Diodes Version Type Ordering number Bestellnummer Num. de commande BOD 1-04 -05 -06 -07 -08 -09 -10 3 flE P V bo Ibo V V Tvj=25°C Ta =50°C mA A 400 500 600 700 800 900 1000 ± 50 <15 Iavm 1100 1200 1300 1400 1500

BD400

Abstract: TD-429 1N3712 in3712 TD-427 TD-423 TD-437 TD-408 TD-401 TD-422
Contextual Info: TUNNEL DIODES MICROWAVE Cj :> Vp Vv Type’ Peak Current Typ. mA Peak Vo Itaiie Typ (mV) Valley Voltage Typ. (mV) V^ Forward Peak Voltage Typ. (mV) (Ip/lv) Peak to Valley Ratio Typ. —R Negative R e sista n ce Rs S e rie s R esista n ce Max. Junction C ap acitan ce

Contextual Info: C4D40120D VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 54A* Z-Rec Rectifier Qc Features • • • • • = 198nC* Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching

Contextual Info: C4D40120D VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 54A* Z-Rec Rectifier Qc Features • • • • • = 198nC* Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching

syntron rectifier

Abstract: 2CL2FP SM3F HGUF10 WESTINGHOUSE RECTIFIERS ct 4a05 4a05 Syntron syntron diode 2CL106
Contextual Info: B D O O O N TH O T C R O EM P Y O VE Manufacturers of • ■ ■ ■ ■ CAN’T FIND WHAT YOU NEED? CALL US. CUSTOM DESIGN IS OUR SPECIALTY. HIGH VOLTAGE DIODES MOVS TVSS DEVICES SELENIUM SUPPRESSORS SILICON CARBIDE SUPPRESSORS ■ HIGH VOLTAGE HIGH CURRENT ASSEMBLIES

BZW11-1QB

Abstract: PFZ015 BZW04-188 BZW04-188B BZW04-202 BZW04-202B BZW04-376 BZW04-376B BZW04-5V5 BZW04-5V5B
Contextual Info: transient voltage suppressor «TRANSIL» utilisations utilisations des diodes de protection «TRANSIL» f\ t h o m s o n -c s f Recommended utilisations Utilisations recommandées Types General purpose Usage général Netw ork protection Protection pour réseau