67 135 DIODE Search Results

129NQ

Abstract: 129NQ135 129NQ150 129NQ150R IRFP460 IRFP460 SWITCHING FREQUENCY
Contextual Info: Bulletin PD-20719 rev. A 03/01 129NQ. R SERIES 120 Amp SCHOTTKY RECTIFIER D-67 Major Ratings and Characteristics Characteristics IF(AV) Rectangular Description/Features 129NQ.(R) Units 120 A 135 to 150 V 10000 A 0.74 V - 55 to 175 °C waveform VRRM range

Contextual Info: Bulletin PD-20721 rev. A 06/02 249NQ. R SERIES 240 Amp SCHOTTKY RECTIFIER D-67 Description/ Features Major Ratings and Characteristics Characteristics IF(AV) Rectangular 249NQ.(R) Units 240 A 135 to 150 V 20000 A 0.72 V - 55 to 175 °C waveform VRRM range

249NQ

Abstract: 249NQ135 249NQ150 249NQ150R IRFP460 irfp
Contextual Info: Bulletin PD-20721 rev. A 06/02 249NQ. R SERIES 240 Amp SCHOTTKY RECTIFIER D-67 Description/ Features Major Ratings and Characteristics Characteristics IF(AV) Rectangular 249NQ.(R) Units 240 A 135 to 150 V 20000 A 0.72 V - 55 to 175 °C waveform VRRM range

Contextual Info: PT16820 OLED Driver IC •       DESCRIPTION The PT16820 is a single-chip CMOS OLED driver/controller for organic light emitting diode dot passive matrix display systems. It consists of 256 segments and 136 commons. The PT16820 communicates with the host

Abb breakover diode

Abstract: BU 3150 cross reference 5SBD 05T1400 20T100 5SBB 20T1200 5SBB 20T1500 20T2500 5SBA 5SBD 05T1300 05t1800
Contextual Info: Breakover Diodes ABB Semiconductors AG • D iffused pnpn structure fired by over­ voltages. Effective protection of thyristors against transients. T hyristor protection by em ergency firing. Housing: Single elem ent Int. structure m > T ole ­ rance V >

Contextual Info: BAQ133 / 134 / 135 Vishay Semiconductors Small Signal Switching Diodes, Low Leakage Current Features • Silicon Planar Diodes • Very low reverse current Applications Protection circuits, time delay circuits, peak follower circuits, logarithmic amplifiers

Contextual Info: BAQ133 / 134 / 135 VISHAY Vishay Semiconductors Small Signal Switching Diodes, Low Leakage Current Features • Silicon Planar Diodes • Very low reverse current Applications Protection circuits, time delay circuits, peak follower circuits, logarithmic amplifiers

SP126

Contextual Info: SURFACE MOUNT TRANSISTORS AND DIODES • A pioneer in Surface Mount products, Philips invented the SOT-23 industry standard SM package. Offering full expertise and innovation in Surface Mount technology, Philips has introduced the newest medium-power one-watt

Contextual Info: BAQ133 / 134 / 135 Vishay Semiconductors Small Signal Switching Diodes, Low Leakage Current Features • Silicon Planar Diodes • Very low reverse current Applications Protection circuits, time delay circuits, peak follower circuits, logarithmic amplifiers

d2388

Abstract: D368S EUPEC D 648 S
Contextual Info: Fast rectifier diodes Type V rrm V eupec If r m s m A If s m d /i2dt 10 ms, 10 ms, t, max tvj max kA A2s • If a v m ^ c N°C 34D32T? 0000112 125 ■ upec V TO> rT Ihm R.hjc tv,= tvj max tvj = tyi max tyj = tVJ max 180°el sin. V mO = I f AVM ¡F tv j m ax

RADIOTRON

Abstract: GE SCR 1000 AMP ST-12 1 watt diode 15 Amp current 1000 volts metal diode Scans-0017344
Contextual Info: RADIOTRON 1K6 D U O -D IO D E PENTODE Filament Voltage Current Maximum Overall Lengtft Maximum Diameter Bulb Cap Mounting Position Coated 2.0 0 .1 2 d-c volts amp. 4-15/16" 1-9/16" ST-18 Small Metal Any Base Pin 1-Filament ♦ Pin 2-Plate „ Pin 3-Diode Plate r S

FZD18

Abstract: CB-197 BZW11-27B FZD10 FZD12 FZD15 FZD22 FZD27 FZD33 FZD39
Contextual Info: transient voltage suppressors «TRANSIL» diodes de protection «TRANSIL» Types Bidirec­ tional 1 ms expo. / FZD6V8 FZD8V2 FZD10 FZD12 FZD15 FZD18 FZD22 FZD27 FZD33 FZD39 FZD47 FZD56 FZD62 FZD68 FZD82 FZD100 FZD120 FZD150 FZD180 800 W PF8Z6V8 PF8Z8V2 PF8Z10

Contextual Info: LASERS & MATERIAL PROCESSING I OPTICAL SYSTEMS I INDUSTRIAL METROLOGY I TRAFFIC SOLUTIONS I DEFENSE & CIVIL SYSTEMS Vertical Diode Laser Stacks cw, actively cooled, with collimation, 9xx nm JOLD-x-CAFN-xA Design 2104xxx26 210480326 3 submounts 210480426 (4 submounts)

Contextual Info: BAQ133.BAQ135 VtSHAY ▼ Vishay Telefunken Silicon Planar Diodes Features • Very low reverse current Applications Protection circuits, tim e delay circuits, peak fo llo w er circuits, logarithm ic am plifiers Absolute Maximum Ratings Tj = 2 5 °C P aram eter

BD400

Abstract: TD-429 1N3712 in3712 TD-427 TD-423 TD-437 TD-408 TD-401 TD-422
Contextual Info: TUNNEL DIODES MICROWAVE Cj :> Vp Vv Type’ Peak Current Typ. mA Peak Vo Itaiie Typ (mV) Valley Voltage Typ. (mV) V^ Forward Peak Voltage Typ. (mV) (Ip/lv) Peak to Valley Ratio Typ. —R Negative R e sista n ce Rs S e rie s R esista n ce Max. Junction C ap acitan ce

Contextual Info: C4D40120D VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 54A* Z-Rec Rectifier Qc Features • • • • • = 198nC* Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching

BZW11-1QB

Abstract: PFZ015 BZW04-188 BZW04-188B BZW04-202 BZW04-202B BZW04-376 BZW04-376B BZW04-5V5 BZW04-5V5B
Contextual Info: transient voltage suppressor «TRANSIL» utilisations utilisations des diodes de protection «TRANSIL» f\ t h o m s o n -c s f Recommended utilisations Utilisations recommandées Types General purpose Usage général Netw ork protection Protection pour réseau

el 509

Abstract: D368S
Contextual Info: EUPEC Fast rectifier diodes Type If r m s m V rrm V r sm = If sm / ¡ 2dt blE » lFAVM/tc • 3403217 0001333 bOb W U P E C V TO rT Ir m R th JC tv j max Outline VRRM + 50 V1) A V 10 ms, 10 ms, tv) = tvj = tyj ~ tv, max ^vj max t,| max t., max 1F = IfaVM

smd schottky diode marking s4

Abstract: BAS401 1PS75SB45 smd schottky diode s6 1PS70SB44 1PS76SB40 1PS79SB40 BAS40 BAS40-04 BAS40H
Contextual Info: BAS40 series; 1PSxxSB4x series General-purpose Schottky diodes 1. Product profile 1.1 General description General-purpose Schottky diodes in small Surface-Mounted Device SMD plastic packages. Table 1. Product overview Type number Package Configuration Philips

EZ0150

Abstract: RZ1030 RZ1040 RZ1055 RZ1065 RZ1100 RZ1125 RZ1150 RZ1175 RZ1200
Contextual Info: Avalanche Diodes with built-in Thyristor Electrical Characteristics Ta = 25°C Absolute Maximum Ratings Parameter VRDC (V) (–10ºC) Type No. RZ1030 RZ1040 RZ1055 RZ1065 RZ1100 RZ1125 RZ1150 RZ1175 RZ1200 EZ0150 Tstg (°C) VZ (V) IR (H) (µA) VR = VRM Ta =100°C max

D 368 S 10

Abstract: el 509 D368S
Contextual Info: EUPEC Fast rectifier diodes Type V Ifr m s m rrm Ifsm blE » / ¡2dt Ifavm / Î c • 3403817 GDG1333 bDb « U P E C V TO rT tvj = tvj Ir m R.hjc t v j m ax Outline V r s m = V r rm + 50 V 1) A V 10 ms, 10 ms, tv j m ax t ’/j max kA A2s tvj max ¡F ~ Ivj max

Thomson-CSF 73

Abstract: PFZD39 PFZD 56 p6ke 528 PFZD33 FZD10 Thomson-CSF plastic diodes FZD15 FZD18 FZD27
Contextual Info: transient voltage suppressors «TRANSIL» diodes de p rotection «TRANSIL» Types Bidirec­ tional 1 ms expo. / 1000 200 10 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 1 ms expo. / PF8Z6V8 PF8Z8V2 PF8Z10 PF8Z12 PF8Z15 PF8Z18 PF8Z22 PF8Z27 PF8Z33 PF8Z39 PF8Z47 PF8Z56 PF8Z62

TS4101

Contextual Info: BZT52-C2V4 THRU BZT52-C75 ZENER DIODES FEATURES ♦ Silicon Planar Power Zener Diodes SOD-123 ♦ The Zener voltages are graded according to the international E 24 standard. Standard Zener voltage tolerance is ±5%. Replace suffix “C” with “B” for ±2% tolerance. Other tolerances and other Zener voltages

3 phase bridge fully controlled rectifier

Abstract: BUSBAR calculation datasheet MP03XXX360
Contextual Info: MP03XXX360 MP03XXX360 Dual Thyristor, Thyristor/Diode Module Replaces January 2000 version, DS4484-5.0 DS4484-6.1 June 2001 FEATURES • Dual Device Module ■ Electrically Isolated Package ■ Pressure Contact Construction ■ International Standard Footprint