660MW Search Results

km6161000bl7

Contextual Info: Preliminary KM6161OOOBL / L-L CMOS SRAM 64Kx16 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 55,70 ns max. • Low Power Dissipation Standby(CMOS) :550^W (max.)L-Version : 110|iW (max.)LL-Version Operating : 660mW (max.) • Single 5V±10% Power Supply

IMS1400P

Abstract: ims1400p-55 16Kx1 IMS1400 IMS1400S35 IMS1400P35 A10C A12C AA1035 16kx1 static ram
Contextual Info: r - IMS1400 • ■ ■ ■ TM High Performance 16Kx1 Static RAM DDUTIOS FEATURES 35, 45 and 55ns Chip Enable access Maximum active power 660mW Maximum standby power 110mW Single 5 volt ± 10% supply E CE power down function TTL compatible inputs and output

Contextual Info: Preliminary CMOS SRAM KM6161OOOBL / L-L 64Kx16 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 55,70 ns max. • Low Power Dissipation Standby(CMOS) :550nW(max.)L-Version :110|iW(max.)LL-Version Operating : 660mW (max.) • Single 5V±10% Power Supply

Contextual Info: epitex Opto-Device & Custom LED High Power Top LED SMBB910D-1100 Lead Pb Free Product – RoHS Compliant SMBB910D-1100 High Power Top LED SMBB910D-1100 is an AlGaAs LED mounted on copper heat sink with a 5*5 mm package These devices are available to be operated and 660mW/sr at IFP=3A.

IMS1420M

Abstract: IMS1420S-55M IMS1420S-70M IMS1420S55M IMS1420N-55M IMS1420N-70M
Contextual Info: IMS1420M High Performance 4Kx4 Static RAM MIL-STD-883C lín m o s DESCRIPTION FEATURES The INMOS IMS1420M is a high performance 4Kx4 Static RAM processed in full compliance to MIL-STD883C with access times of 55ns and 70ns and a maximum power consumption of 660mW. These characteristics are

a 3140

Abstract: IDT7207
Contextual Info: CMOS ASYNCHRONOUS FIFO 32,768 x 9 PRELIMINARY IDT7207 Integrated Device Technology, Inc. FEATURES: • 32768 x 9 storage capacity • High-speed: 15ns access time • Low power consumption — Active: 660mW max. — Power-down: 44mW (max.) • Asynchronous and simultaneous read and write

IDT7208

Contextual Info: CMOS ASYNCHRONOUS FIFO 65,536 x 9 ADVANCE INFORMATION IDT7208 Integrated Device Technology, Inc. FEATURES: • 65536 x 9 storage capacity • High-speed: 15ns access time • Low power consumption — Active: 660mW max. — Power-down: 44mW (max.) • Asynchronous and simultaneous read and write

IDT7207

Abstract: IDT720X ta 7207
Contextual Info:  CMOS ASYNCHRONOUS FIFO 32,768 x 9 IDT7207 Integrated Device Technology, Inc. FEATURES: • 32768 x 9 storage capacity • High-speed: 20ns access time • Low power consumption — Active: 660mW max. — Power-down: 44mW (max.) • Asynchronous and simultaneous read and write

Contextual Info: CMOS ASYNCHRONOUS FIFO 32,768 X 9 IDT7207 In te g ra te d D e vice T e ch n o lo g y, Inc. FEATURES: DESCRIPTION: • 32768 x 9 storage capacity • High-speed: 15ns access time • Low power consumption — Active: 660mW max. — Power-down: 44mW (max.)

LTC5541

Abstract: LT5554 LT5579 LTC5540 LT5578 LTC5542 LTC5543 LT5570 LT5557
Contextual Info: LTC5542 1.6GHz to 2.7GHz High Dynamic Range Downconverting Mixer DESCRIPTION FEATURES n n n n n n n n n n n n n n Conversion Gain: 8dB at 2.4GHz IIP3: 26.8dBm at 2.4GHz Noise Figure: 9.9dB at 2.4GHz 17.3dB NF Under +5dBm Blocking High Input P1dB 3.3V Supply, 660mW Power Consumption

LTC5543

Abstract: j349 Transistor J182 2595MHz j182 LTC5540 LTC5542 LTE bandpass filter j455 0603CS
Contextual Info: LTC5543 2.3GHz to 4GHz High Dynamic Range Downconverting Mixer DESCRIPTION FEATURES n n n n n n n n n n n n Conversion Gain: 8.4dB at 2500MHz IIP3: 24.5dBm at 2500MHz Noise Figure: 10.2dB at 2500MHz 17.5dB NF Under +5dBm Blocking High Input P1dB 3.3V Supply, 660mW Power Consumption

980nm pump laser

Abstract: SM98-PS-U25A-H laser diode 980nm single mode GR-468-CORE
Contextual Info: +&1; 660mW Kink-Free, FBG Stabilized 980nm Laser Pump Module Features: >600mW operating power Epoxy free, flux free 14-pin low profile butterfly package Fiber Bragg Grating FBG stabilized with either PM or SM Fiber pigtail Low total power consumption:

a 3140

Abstract: IDT7207 7201
Contextual Info: CMOS ASYNCHRONOUS FIFO 32,768 x 9 IDT7207 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 32768 x 9 storage capacity • High-speed: 15ns access time • Low power consumption — Active: 660mW max. — Power-down: 44mW (max.) • Asynchronous and simultaneous read and write

LT5554

Abstract: LTC5540 LT5578 LTC5543 LTC5542 LT5570 LT5557 LT5568
Contextual Info: LTC5543 2.3GHz to 4GHz High Dynamic Range Downconverting Mixer DESCRIPTION FEATURES n n n n n n n n n n n n n n Conversion Gain: 8.4dB at 2500MHz IIP3: 24.5dBm at 2500MHz Noise Figure: 10.2dB at 2500MHz 17.5dB NF Under +5dBm Blocking High Input P1dB 3.3V Supply, 660mW Power Consumption

MAX3875

Abstract: MAX3885 MAX3885ECB
Contextual Info: 19-4767; Rev 0; 9/98 +3.3V, 2.488Gbps, SDH/SONET 1:16 Deserializer with LVDS Outputs Features ♦ Single +3.3V Supply ♦ 2.488Gbps Serial to 155Mbps Parallel Conversion ♦ 660mW Operating Power ♦ LVDS Data Outputs and Synchronization Inputs ♦ Self-Biasing PECL Inputs Ease AC Coupling

Contextual Info: IMS1420M High Performance 4Kx4 Static RAM MIL-STD-883C imos FEATURES DESCRIPTION The INMOS IMS1420M is a high performance 4Kx4 Static RAM processed in full compliance to MIL-STD883C with access times of 55ns and 70ns and a maximum power consumption of 660mW. These characteristics are

Contextual Info: CMOS ASYNCHRONOUS FIFO 32,768 X 9 :fflS'Np Idt PRELIMINARY IDT7207 Integrated Device Technology, Inc. FEATURES: • 32768 x 9 storage capacity • High-speed: 15ns access time • Low power consumption — Active: 660mW max.) — Power-down: 44mW (max.)

TC4-1W-7ALN

Abstract: WBC4-6TLB J842 G18A LTC5541 J221 LTC2242-12 LTC5543 LTC5540 LTC5542
Contextual Info: LTC5542 1.6GHz to 2.7GHz High Dynamic Range Downconverting Mixer DESCRIPTION FEATURES n n n n n n n n n n n n Conversion Gain: 8dB at 2.4GHz IIP3: 26.8dBm at 2.4GHz Noise Figure: 9.9dB at 2.4GHz 17.3dB NF Under +5dBm Blocking High Input P1dB 3.3V Supply, 660mW Power Consumption

a 3140

Abstract: IDT7207
Contextual Info: CMOS ASYNCHRONOUS FIFO 32,768 x 9 PRELIMINARY IDT7207 Integrated Device Technology, Inc. FEATURES: • 32768 x 9 storage capacity • High-speed: 15ns access time • Low power consumption — Active: 660mW max. — Power-down: 44mW (max.) • Asynchronous and simultaneous read and write

IDT720X

Abstract: depth expansion fifo pointer read write IDT7208
Contextual Info: CMOS ASYNCHRONOUS FIFO 65,536 x 9 ADVANCE INFORMATION IDT7208 Integrated Device Technology, Inc. FEATURES: • 65536 x 9 storage capacity • High-speed: 15ns access time • Low power consumption — Active: 660mW max. — Power-down: 44mW (max.) • Asynchronous and simultaneous read and write

ttl 7493

Abstract: IMS1400N-45M
Contextual Info: IMS1400M • High Performance 16K Static RAM MIL-STD-883C i m os DESCRIPTION FEATURES The INMOSIMS1400M is a high performance 16Kx1 Static RAM processed in full compliance to MIL-STD883C with access times as fast as45nsecanda maximu m power consumption of 660mW, These characteristics are

TC5116400

Abstract: tc5116400csj 300D1 toshiba RAS-25
Contextual Info: INTEGRATED TOSHIBA TO SH IBA M O S DIGITAL NTEGRATED CIRCUIT CIRCUIT TECHNICAL T C 5 1 16 4 0 0 C S J / C S T - 4 0 T C 5 1 1 6 4 0 0 C S J / C S T - 50 T C 5 1 1 6 4 0 0 CSJ / C S T * 60 DATA SILICON GATE C M O S TENTATIVE D ATA 4,194,304 W O R D x 4 BIT D Y N A M IC R A M

A100COLUMN

Contextual Info: 4 ,1 9 4 ,3 0 4 W ORD x 1 BIT D Y N A M IC R A M * This is advanced information and specifica­ tions are subject to change without notice. DESCRIPTION The TC514101AP/AJ/ASJ/AZ is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514101AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as

tc5117400f

Abstract: TC5117400J
Contextual Info: TOSHIBA TC5117400J/Z/FT-60/70 4,194,304 WORD X 4 BIT DYNAMIC RAM DESCRIPTION The TC5117400J/Z/FT-60/70 is the new generation dynamic RAM organized 4,194,304 word by 4 bit. The TC5117400J/Z/FT-60/70 utilizes Toshiba’s CMOS silicon gate process technology as well as advanced