6561 IC Search Results

HM1-6561

Contextual Info: HM-6561/883 256 x 4 CMOS RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-6561/883 is a 256 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous

6561

Abstract: 6561 IC
Contextual Info: HM-6561 HARRIS S E M I C O N D U C T O R 256 x 4 CMOS RAM March 1997 Features Description • Low Power Standby. 50|iW Max The HM-6561 is a 256 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous cir­

6561

Abstract: HM1-6561-9 6561-9 HM-6561-9 HM1-6561 HM1-6561B-9 HM-6561 HM-6561B-9 L 6561 32 x 32 matrix
Contextual Info: HM-6561 256 x 4 CMOS RAM March 1997 Features Description • Low Power Standby . . . . . . . . . . . . . . . . . . . . 50µW Max The HM-6561 is a 256 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high performance and low power operation.

Contextual Info: HM-6561/883 Semiconductor 256 x 4 CMOS RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conform ant Under the Provisions of Paragraph 1.2.1. The HM-6561/883 is a 256 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous

HM3-6561-9

Abstract: HM3-6561B-9 hm1-6561b/883
Contextual Info: f f t H A R R HM-6561 I S S E M I C O N D U C T O R 256 X 4 CMOS RAM February 1992 Features Description • Low Power Standby. 50|iW Max. The HM-6561 is a 256 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design

Contextual Info: HM-6561/883 HARRIS S E M I C O N D U C T O R 256 x 4 CMOS RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conform ant Under the Provisions of Paragraph 1.2.1. The HM-6561/883 is a 256 x 4 static CMOS RAM fabricated

Contextual Info: cm H A R R HM-6561/883 IS S E M I C O N D U C T O R 256 x 4 CMOS RAM February 1992 Features Description • This Circuit is Processed in Accordance to Mil-Std883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-6561/883 is a 256 x 4 static CMOS RAM fabricated

MPS6563

Contextual Info: MPS 6560 • MPS 6562 MPS 6561 - MPS 6563 COMPLEMENTARY SILICON AF MEDIUM POWER TRANSISTORS CASE T0-92A THE MPS656 O, MPS 656 I NFN AND MPS6562 , MPS6563 (PNP) ARE SILICON PLANAR EPITAXIAL TRANSISTORS DESIGNED FOR COMPLEMENTARY SYMMETRY AUDIO OUTPUT APPLICATIONS. THEY FEATURE LOW COLLECTOR TO

TEA 5560

Abstract: TA5561 5561 5560 C15-1 L 6561 318s 67376-2
Contextual Info: 64-Bit 16 x 4 Random Access M em ory 5560/ 6560, 5561/6561 Features/B enefits • • • • • • Selection Gui Advanced Schottky processing. Low input current (250 /xA m axim um ). Data outputs are off during a write cycle. Fully decoded and TTL compatible.

ax3003

Contextual Info: HM -6561 23 HARRIS 256 x 4 CMOS RAM Features • • • • • • • • • • • • Pinout HM-6100 Com patible Low Standby P o w e Max. Low Operating P o w e r. 20mW/MHz Max.

HM-6561-5

Contextual Info: Specifications HM-6561-5 ABSOLUTE M A XIM U M RATINGS OPERATING RANGE Supply Voltage - VCC - G N D -0 .3 V to +8.0V A pplied In p u t or O u tp u t Voltage (G N D -0 .3 V ) to (VCC + 0.3V ) -650C t o +1500C Storage Temperature Operating Supply V oltage -V C C

6562

Abstract: HM-6562 HM-6641 HWI-6562 HM-6611 HM-6561 HM-6661 6562 s harris 6562
Contextual Info: HARRIS HM-6562 SEM ICO NDUCTOR P R O D U C T S DIVISI ON A DIVISION OF HARRIS CORPORATION 256 <4 C M O S R A M NOT RECOMMENDED FOR NEW DESIGNS SEE HM-6561 Pinout Features LOW POWER STANDBY LOW POWER OPERATION FAST ACCESS TIME D A T A R ETENTIO N VOLTAG E T T L COMPATIBLE IN /O U T

ic 358s

Abstract: 358s ic+358s 1358S I358S
Contextual Info: ANI 358 AN6562 ANI 358S (AN6562S) .AN6561 OPERATIONAL AMPLIFIERS AN1 358 (AN6562), AN1 358S (AN6562S) ,AN6561 Dual Operational Amplifiers • Outline T h e A N 1358 (A N 6562), the A N 1358S (A N 6562S) and the AN 6561 are dual operational am p lifiers w ith phase com p en sa­

HM3-6561-9

Abstract: HM3-6561 GG3C 6561 HM165619
Contextual Info: 4fc>E D HARRIS SEMICONP SECTOR 4 3 D 2 2 7 1 □ 0 3 ci D ci l _ T _ • HAS HM-6561 ¡Sì HARRIS S E M I C O N D U C T O R 256 X 4 CMOS RAM February 1992 Description Features • Low Power Standby. 50fiW Max. • Low Power Operation. 20mW/MHz Max.

6561

Abstract: HD 6561 MI 6561 harris 6408 256X4 CMOS RAM prom 256x4 bit 20/MI 6561 HD-6101 HD-6402 HM-6322
Contextual Info: an HARRIS HM-6561 SEM ICO NDUCTOR P R O D U C T S DIVISI ON A DIVISIO N OF HARRIS CORPORATION 256 x 4 C M O S R A M Pinout Features HM-6100 C O M P A T IB L E LOW S T A N D B Y POW ER LOW O P E R A T IN G POW ER F A S T ACCESS TIM E D A T A R E T E N T IO N V O L T A G E

cl 6562

Contextual Info: HARRIS HM-6562 S E M IC O N D U C T O R PRODUCTS DIVISION A DIVISION OF HARRIS CORPORATION 256 x 4 C M O S RA M NOT RECOMMENDED FOR NEW DESIGNS SEE HM-6561 Features Pinout LO W POWER S T A N D B Y LO W POWER O P E R A T IO N F A S T ACCESS T IM E D A T A R E T E N T IO N V O L T A G E

Contextual Info: HARRIS H M -6561/883 256 x 4 CMOS RAM June 1 989 P in o u t F eatures H M 1-6 5 6 1 /8 8 3 CERAMIC DIP TOP VIEW • T h is C ir c u it is P ro c e s s e d in A c c o rd a n c e to M il- S t d - 8 8 3 a n d is F u lly C o n fo r m a n t U n d e r th e P ro v is io n s o f P a ra g ra p h 1 .2 .1 .

diagram ic 12f 629

Abstract: 30f 124 equivalent diode F6 4d diode F4 4e diode F6 5b MC4006 603 31f ADB 646 MC7414 ic 324
Contextual Info: MCM6560 MCM6561 MCM6562 MOS 8192-BIT BINARY ADDRESSABLE READ ONLY MEMORIES N C H A N N E L , L O W T H R E S H O L D 8K BINARY ADDRESSABLE R EA D O N LY MEMORIES The M C M 6560 is a mask program m able 8 1 9 2 -b it static Read O n ly M em o ry fabricated w ith N-Channei metal gate technology. A

General Semiconductor diode ed 7b

Abstract: 30f 124 equivalent diode F4 4e 3AB 973 734 2D 1002 diode 7A SF MC4006 BV 726 C 1 Converter 881 2ac cr 29c
Contextual Info: M O T O R O L A MCM6560 MCM6561 MCM6562 , MOS 8192-BIT BINARY ADDRESSABLE READ ONLY MEMORIES N -C H A N N E L . LO W T H R E S H O L D T h e M C M 656Û is a mack p ro g ra m m a b le 8 1 9 2 -b it s ta tic Read O n ly M e m o ry fa b ric a te d w ith N-C hannel m e ta l gate te c h n o lo g y . A

motorola 6820

Abstract: motorola 7852 motorola 8026 motorola ST 1076 trw 7730 6840 1 motorola ic 8279
Contextual Info: MOTOROLA SC 1EE D I b3t.7ESM GGfifiMGl 3 | XSTRS/R F MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA TRW 53001 Se rie s The RF Line M ic r o w a v e Linear P o w e r T ra n sisto rs 7.5 TO 8.5 dB 1 TO 3 GHz 0.8 W ATT M ICRO W AVE LINEAR POWER T R A N SIST O R S

diode E6L

Abstract: infrared security alarm notes e8 capacitor pin configuration Bc327 UNIVERSAL ir remote decoder BC327 TEA5501 TEA5551 TEA5591 Security Systems
Contextual Info: Philips Sem iconductors Integrated C ircuits Product specification Coded locking circuit for security systems one-shot output; 6.5k codes GENERAL DESCRIPTION The TEA5501 is an encoder/decoder circuit, for security systems. In the system a complex code is

TDA3047

Abstract: TEA5501 TDA3047 application notes
Contextual Info: Philips Components D E V E L O P M E N T DATA TEA5501 T h is data sh e e t c o n ta in s a dvance inform ation and sp e cifica tio n s w h ic h are su b je ct to c h a n g e w ith o u t notice. CODED LOCKING CIRCUIT FOR SECURITY SYSTEMS one-shot output; 6.5 k codes

SDT96905

Abstract: SDT14304 TO114
Contextual Info: Solitron Devices Page 1 of 2 Switchtron Power Transistors Device Type Polarity V 1 CEO C sus (Peak) VOLTS AMPS h FE MIN/ MAX @ 1C AMPS V CE (sat) MAX @ IC AMPS 1TMHz MIN. PT(W) MAX. tf micro sec. @ 1C AMPS Case Type 2N 6546 * NPN 300 30 10/ 60 5.0 1.50 10.0

1u4 tube

Abstract: tube 1U4 electron tube 1u4 11II1 rs tube 90VOLTS Scans-0017352 Iu4 tube
Contextual Info: IU4 TUNO-SOL PENTODE C O A T E D F IL A M E N T NC A F A N D R F A P P L IC A T IO N S A N Y M O U N T IN G P O S IT IO N B O T T O M VI EW B A S IN G D IA G R A M J E D E C 6AR GLASS BULB M IN IA T U R E B U T T O N 7 P IN B A S E E7-1 O U T L IN E D R A W IN G