6515 TRANSISTOR Search Results

2n6520

Abstract: 2N6517 2N6515 2N6517 MOTOROLA 2N6519 transistors aio 20
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistors NPN NPN 2N 6515 2N6517 PNP 2N 6519 2N652Ö PNP EMITTER EMITTER MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage 2N6515 2N6517 2N6520 2N6519 v CEO 250 300 350 Vdc Collector-Base Voltage VCBO

Contextual Info: í w MPS 6512 thru’ MPS 6515 r NPN SILICON PLANAR EPITAXIAL TRANSISTORS CASE T0-92A MPS6512 th ru1 MPS6515 are NPN silicon planar epitaxial transistors designed for general purpose amplifier applications and for com­ plementary circuitry. EBC ABSOLUTE MAXIMUM RATINGS

2n6520

Abstract: 2N6517 bc250 2n6519
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistors NPN NPN 2N 6515 2N 6517 PNP 2N 6519 2N 6520 PNP EMITTER EMITTER MAXIMUM RATINGS Rating Symbol 2N6515 2N6519 2N6517 2N6520 C oilector-E m itter Voltage v CEO 250 300 350 Vdc C ollector-B ase Voltage

MPS6514

Abstract: MPS6512 MPS 6512 WBSF
Contextual Info: ? :V ^ J ¥à •4 •> -' ■- <¿ MPS 6512 thru’ MPS 6515 âsi;ÿ NPN SILICON PLANAR EPITAXIAL TRANSISTORS là ' ' n i - CASE TO-92A MPS6512 thru' MPS6515 are NPN silicon planar epitaxial transistors designed for general purpose amplifier applications and for com­

mps6514

Contextual Info: b^E ]> • bb53T31 Q Q S T T n A2T MPS6513 MPS6514 MPS6515 APX N AUER PHILIPS/DISCRETE V. AMPLIFIER TRANSISTOR General purpose n-p-n transistors in TO-92 envelopes. The complementary types are MPS6517 to MPS6519. QUICK REFERENCE DATA MPS6513 6514 6515 VCEO

MPS6513

Abstract: LG IC 621 MPS65 MPS6514 MPS6515 MPS6517 MPS6519 6515 transistor 5bti T2721
Contextual Info: MPS6513 MPS6514 MPS65Ì5_ PHILIPS 7 1 1 0 ô 2 t 0 0 4 2 4 ^ 0 323 « P H I N INTERNATIONAL AMPLIFIER TRANSISTOR T - 2 7 - Z / General purpose n-p-n transistors in TO-92 envelopes. The complementary types are MPS6517 to MPS6519. QUICK REFERENCE DA TA MPS6513

mps6513 TRANSISTOR

Abstract: 6514 TRANSISTOR MPS6513 MPS6514 MPS6515 MPS6517 MPS6519 6514 mi 6514
Contextual Info: b'îE ]> • bbSB'ìai QQST'ìTì ÔET MPS6513 MPS6514 MPS6515 IAPX N AUER PHILIPS/DISCRETE AMPLIFIER TRANSISTOR General purpose n-p-n transistors in TO -92 envelopes. T he co m p le m e nta ry types are M PS6517 to MPS6519. Q U IC K R E F E R E N C E D A T A

Contextual Info: SIEMENS AKTIENGESELLSCHAF LOE ]> • 023SbOS G D S m ? S M7D I1SIE6 SIEMENS Transistoren Transistors AIGaAs/GaAs HEMTs AIGaAs/GaAs HEMTs Characteristics TA = 25° C Maximum Ratings E mW 9m mS 70 180 40 ¿> P o Type 70 180 40 -3.0.0 60 180 50 70 200 40

Contextual Info: 2N6517 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR TO -92 • C ollector-E m itter Voltage: V Ceo = 3 5 0 V • C ollecto r D issipation: Pc m ax =625m W ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic C ollector-B ase Voltage C ollector-E m itter Voltage

2N6515

Abstract: 2N6517 250V 100MA NPN
Contextual Info: 2N6517 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR • C ollector-E m itter Voltage: V C e o = 3 5 0 V • C ollector Dissipation: P c m ax =625m W ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic Sym bol C ollector-Base Voltage C ollector-E m itter Voltage

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR 2N6516 HIGH VOLTAGE TRANSISTOR TO -92 • C ollector-E m itter Voltage: V Ceo = 3 0 0 V • C ollecto r D issipation: Pc m ax =625m W ABSOLUTE MAXIMUM RATINGS (TA=25°C) Characteristic C ollector-B ase Voltage C ollector-E m itter Voltage

2N661

Abstract: 2n6617
Contextual Info: MAXIMUM RATINGS 2N6516 Rating NPN 2N6517 Symbol 2N6515 2N6519 2N6520 U n it C o lle ctor-E m itte r V olta g e VCEO 250 300 350 V dc C o lle cto r-B ase V olta g e CCBO 250 300 350 Vdc Em itte r-B a se V olta g e 2N6515, 2N6516. 2N6517 2N6519, 2N6520 Veb o

2N6515

Abstract: 2N6517
Contextual Info: 2N6517 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR • C ollecto r-E m itte r V oltage: V Ceo = 3 5 0 V • C o llecto r D issipation: Pc m a x =62 5 m W ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic C ollector-B ase V oltage C ollecto r-E m itte r V oltage

2N6515

Abstract: 2N6516
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR 2N6516 HIGH VOLTAGE TRANSISTOR TO -92 • C ollector-E m itter Voltage: V Ce o = 3 0 0 V • C ollector Dissipation: P c m ax =625m W ABSOLUTE MAXIMUM RATINGS (T a=25°C) C haracteristic Symbol C ollector-Base Voltage C ollector-E m itter Voltage

BD53A

Abstract: KSA733 KSC1330 KSC945 BD139 BD433 TO92 KSE 13007 L ss8050 sot-23 KSE13009F KSP10
Contextual Info: FUNCTION GUIDE TRANSISTORS 3. QUICK REFERENCE TABLE APPLICATION 3.1 Audio Equipment “i Package Application FM AM D iff. Amp RM AM P M ix Conv Local Ose IF SOT-23 KSC2223 KSC2223 KSC2223 KSC2715 RF KSC1623 Conv Ose KSC2715 IF KSC2715 10W 20W KSA812/KSC1623

MMBT3414

Abstract: MMBT3946 MMBT5135 MMBT101 mmbt mmbt2221 MMBT3642 MMBT5223 MMBT100 MMBT100A
Contextual Info: This Surface Mount Devices NATL Surface Mount Transistors General Purpose Amplifiers and Switches—NPN Type No. Case Style VßE SAT Cob •oil NF VCBO VCEO Vebo >CBO Test Process tire @ •c & V CE VB(SAT) Vcb (MHz) ■c (ns) (dB) (V) @ >C (PF) (V) (V)

MMBT3946

Abstract: MMBT3415 MMBTA20
Contextual Info: Surface Mount Devices National Semiconductor Surface Mount Transistors CO m t-4 O O 2 General Purpose Amplifiers and Switches—NPN C a se Style VCBO V Min VCEO (V) Min VEBO (V) Min TO-236 (49) 75 45 6 MMBT100A TO-236 (49) 75 45 6 50 60 300 100 220 MMBT101

Contextual Info: MAXIMUM RATINGS NPN Symbol 2N6515 2N6516 2N6519 2N6517 2N6520 C o llector-E m itter Voltage Vc e O 250 300 350 Vdc Collector-Base Voltage CcBO 250 300 350 Vdc Em itter-Base Voltage 2N6515, 2N6516, 2N6517 2N6519, 2N6520 v EBO Rating U n it 2N6515 thru 2N6517*

2sc 9015

Abstract: 2SC644 CS9015 2N4248 scr 4059 transistor MPS 6518 mpsa09 2SC923 2N3550 2SC644 transistor
Contextual Info: 7 -. SEMICONDUCTORS INC OIE I | SlBktSO 0000275 1 | ¿Lf-/? TYPE NO. ; POLARITY 1 Audio Frequency Small Signal Transistors MAXIMUM RATINGS CASE HFE Pd mW) >C (mA) VCEO (V) min max •c (mA) VCE (V) VCE(SAT) max ■c (V) (mA) fT min (MHz) Cob max (pF) 5+

2SC3133 cross reference

Abstract: Hitachi 2sc281 NEC D882 A564A D1163A 2sC1815 cross reference a628a krc1211 KRA2203 NEC D288
Contextual Info: CROSS REFERENCE GUIDE TRANSISTORS TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG 2N 3903 M O TO RO LA 2N 3903 2SA1052 KSA812 2SA1298 T O S H IB A KSA1298 2N 3904 M O TO RO LA 2N 3904 2SA1072A FUJITSU KSA1050 2SA1299 M ITS UB ISH I KSA1174 2N 3905

2sc 9015

Abstract: 2SC644 CS9015 9014n BC 945 transistor BC 945 2N4248 BC267 2SC828 2sc828a
Contextual Info: BC BC BC BC BC 132 153 154 167 168 107 108 109 113 114 Z Z Z Z Z Z Z -0 -0 z Z Z Z Z Z TO-106 TO-92F TO-92B TO-92F TO-92B 901-01 90101 901-01 901-01 901-01 TO-92F TO-92B TO-92F TO-92B TO-18 TO-18 TO-18 TO-18 TO-92F TO-92B 3 3 3 3 â <b <b <b cb b M IO M tO K

117L7

Abstract: 2e22 6JV6 6BM8 12EC8 6au5gt 6HF5 6GH8A 6HB5 12U7
Contextual Info: TUNS-SOL TECHNICAL DATA TUNG-SOL ELECTRON TUBES TUNG-SOL ELECTRIC INC. ELEC TR O N T U B E DIVISIO N NEW ARK, N. }. U. S. A. PL ATE 275r OCT. 1 1951 C O P Y R IG H T 1 9 0 1 BY T U N O - S O L E L EC TR IC IN C . E L E C T R O N IC T U B E D IV ISIO N N E W A R K . N E W J E R S E Y . U . S. A.

ZN 3055 transistor

Abstract: Transistor w1l 7805 TO-220 V7233 5241E V7331 V5237B V-5240-k mk 5373 V7622
Contextual Info: ASSMANN Technical Data & Abbreviations Electronic C om ponen ts Al Surface nature AI203 Aluminiumoxyd Al Mg Si 0,5 Special aluminium alloy {extruded Al 99,5 Special aluminium alloy band) GD-AI Si 12 Special aluminium alloy (Die-cast) BeO Berylliumoxyd K

TFK diodes BYW 76

Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
Contextual Info: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35