640V Search Results

ixys dsei 2x30-04c

Contextual Info: DSEI 2X30-04C/06C DSEI 2X31-04C/06C DIXYS Diode 2X30-04C/06C 2X31-04C/06C FRED V RSM V rrm 440V 640V 400V 600V Symbol Type DSEI 2x 30/31 -04C DSEI 2x 30/31 -06C o -l- I f DSEI2x30 Test Conditions T VJ I "^"v j M A A TVJ = 150°C t = 10 mS (50 Hz), sine t = 8.3 ms (60 Hz), sine

Contextual Info: High Current DC Single Line Feed-thru Series Features • ■ ■ ■ Single Line Filters ■ ■ ■ ■ ■ Agency Approval Voltage: 130VDC/130VAC 50/60Hz Filter Rated Voltage: 640VDC/250VAC 50/60/400Hz C Configuration with Class Y4 capacitors Current rating up to 300 Amps

Contextual Info: □ IXYS MEA/ MEE / MEK 250-12DA Preliminary Data Fast Recovery Epitaxial Diode FRED Module TYPE: MEA250-12DA 1 640V 600V Symbol FRMS I <x> Ji2dt 2 MEE250-12DA 3 2 3 1 2 4—4 - 4 , 4 -4 -4 , I 1 l< I »I I i I I M 1 >1 I I I 1 H 1 l< I I 367 260 1480 A

2SK1602

Contextual Info: 2SK1602 2SK1602 o X -í 7 Í > 'T'ffl M 'Æ , ^ > Ì£ ÌJ t^ fiv > 0 : R d S(O N )=4.3 îî F5 : iYfsl = 1 . 7 S ( í ^ ) . M fifö fö iS r . ü tiÄ ^ 'fiU 'o : ID s s = 1 0 0 M ( S ^ ) (Vd S = 640V) • X . 'y > W 7 , > I > V ? 4 - ? - Ç - ï 0 : Vth = 1.5~3.5v(VDS = 10V, lD = lm A )

ss100 transistor

Abstract: 2SK2605
Contextual Info: T O S H IB A 2SK2605 TOSHIBA FIELD EFFECT TRANSISTOR 2SK2605 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS Low Drain-Soree ON Resistance : Typ. High Forward Transfer Admittance : |Yfs| = 3.8S (Typ.) Low Leakage Current : I d SS“ 100/^A (Max.) (Vj)g = 640V)

JIS for humidity test for touch screen

Abstract: sharp lcd panel pin LCP-06008A-1 BUSBAR size
Contextual Info: Technical Document LCD Specification LCD Group LS037V7DW01 LCD Module Product Specification March 2008 Transflective LCD module with touch panel. Resolution is selectable between VGA 480H x 640V or QVGA (240H × 320V). Color mode is selectable between 262,144

Contextual Info: High Current DC Single Line Pi Series Features • ■ ■ Single Line Filters ■ ■ ■ ■ Agency Approval Voltage: 130VDC/130VAC 50/60Hz Filter Rated Voltage: 640VDC/250VAC 50/60/400Hz Pi Configuration with Class Y4 capacitors Current rating up to 200 Amps

2SK2607

Abstract: SC-65
Contextual Info: *>'J * * . / U M O S f i2 7 r - M O S I I I 2SK2607 <KKW07) m O DC-OCH > / < - ? . i - 5 > K 9«f 7 # is X « Iftfï : mm li tMAX 01 J t 0.2 • JR o t a v i « » ! * * . i > Kd s (O n ) = i o n ( « i » |Yfc| = 7.0S(*#t*) I d SS = 100//A <*^> (VDS=640V)

2SK2038

Abstract: Transistor TOSHIBA 2SK
Contextual Info: TOSHIBA 2SK2038 Field Effect Transistor U n it in m m Silicon N Channel MOS Type rc-MOS 11.5 High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance • R ds (ON) = 1 (Typ-) • High Forward Transfer Adm ittance - Yfs' = 3.OS (Typ.)

fqt1n80

Contextual Info: QFET FQT1N80TF_WS N-Channel MOSFET 800V, 0.2A, 20Ω Features Description • RDS on = 15.5Ω (Typ.)@ VGS = 10V, ID = 0.1A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Contextual Info: R8005ANX Nch 800V 5A Power MOSFET Datasheet lOutline VDSS 800V RDS on (Max.) 2.08W ID 5A PD 40W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.

THHN WIRE 12 AWG

Abstract: 820V 65kA TB1-65220-1G-40 AWG THHN TB1 225 sanden automatic voltage regulators Lg "Noise Filter"
Contextual Info: TB1 Series-Transient Voltage Surge Suppressors Series-connected Design Terminal Board/Series-connected Suppression Filter System The TB1 Series STABILINE Transient Voltage Surge Suppressor is engineered for hard-wired installation within or adjacent to electrical loads such as programmable logic controllers,

20015WR-05A00

Abstract: LX1691B LXMG1617A-12-61 LXMG1617A-12-62 SM02
Contextual Info: PanelMatch TM LXMG1617A-12-6x 12V 6W CCFL Programmable Inverter Module P RODUCTION D ATASHEET KEY FEATURES DESCRIPTION IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com ƒ Externally Programmable Maximum Output Current

"Direct Replacement" microsemi

Abstract: LX1691B LXMG1618A-05-61 LXMG1618A-05-62 SM02 10K POTENTIOMETER 100mm
Contextual Info: PanelMatch "A Series" TM LXMG1618A-05-6x 5V 6W CCFL Programmable Inverter Module P RODUCTION D ATASHEET DESCRIPTION from the system battery, or AC adapter directly to high frequency, high-voltage waveform required to ignite and operate CCFL lamps. A 12V input inverter is also

APT8014L2FLL

Abstract: MAX7238
Contextual Info: APT8014L2FLL 800V 52A 0.140Ω POWER MOS 7 R FREDFET TO-264 Max Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

8114

Abstract: APT12M80B APT12M80S MIC4452
Contextual Info: APT12M80B APT12M80S 800V, 13A, 0.80Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

APT15F50K

Abstract: MIC4452 half bridge converter
Contextual Info: APT15F50K 500V, 15A, 0.39Ω Max, trr ≤190ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

APT8024B2VFR

Abstract: APT8024B2VR APT8024LVR
Contextual Info: APT8024B2VR APT8024LVR 800V 33A POWER MOS V MOSFET B2VR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

APT22F80B

Abstract: APT22F80S MIC4452 two switch forward converter
Contextual Info: APT22F80B APT22F80S 800V, 23A, 0.43Ω Max, trr ≤260ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

itw cs4

Abstract: 2SC947F 47-400-0 itw 405 k ITW Switches 204D itw paktron
Contextual Info: Capacitor Types • Surface mount capability • Ideal for high frequency switching power supplies and DC to DC converters • Low ESR/ESL • High ripple current/ High capacitance • Operating temperature range: –55°C to 125°C • Volumetrically efficient

APT8043BLL

Abstract: APT8043SLL
Contextual Info: APT8043BLL APT8043SLL 800V POWER MOS 7 R MOSFET BLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

7106

Abstract: data sheet IC 7106 IL 7106 APT8014JFLL
Contextual Info: APT8014JFLL 800V 42A 0.140Ω POWER MOS 7 R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

APT8024JFLL

Contextual Info: APT8024JFLL 800V 29A 0.240Ω POWER MOS 7 R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

CoolMOS Power Transistor

Abstract: POWER MOSFET 4600 UPS SIEMENS 25N80C
Contextual Info: Power MOSFET ISOPLUS220TM IXKC 25N80C Electrically Isolated Back Surface Low RDS on , High Voltage, CoolMOSTM Superjunction MOSFET VDSS = 800 V ID25 = 20 A Ω RDS(on) = 150 mΩ Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C