640V Search Results

Contextual Info: High Current DC Single Line Pi Series Features • ■ ■ Single Line Filters ■ ■ ■ ■ Agency Approval Voltage: 130VDC/130VAC 50/60Hz Filter Rated Voltage: 640VDC/250VAC 50/60/400Hz Pi Configuration with Class Y4 capacitors Current rating up to 200 Amps

2SK2607

Abstract: SC-65
Contextual Info: *>'J * * . / U M O S f i2 7 r - M O S I I I 2SK2607 <KKW07) m O DC-OCH > / < - ? . i - 5 > K 9«f 7 # is X « Iftfï : mm li tMAX 01 J t 0.2 • JR o t a v i « » ! * * . i > Kd s (O n ) = i o n ( « i » |Yfc| = 7.0S(*#t*) I d SS = 100//A <*^> (VDS=640V)

ka5l0380r

Contextual Info: Preliminary KA5L0380R S P S S P S TO -22 0F -4L The SPS product family is specially designed for an off-line SMPS with minimal external components. The SPS consist of high voltage power SenseFET and current mode PWM IC. Included PWM controller features integrated fixed frequency

Contextual Info: 2SK3787-01MR 200311 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power TO-220F Applications Switching regulators

Contextual Info: 2SK2764-01R FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-3PF Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply

CD 1517

Abstract: IRFIBE20G
Contextual Info: PD-9.853 International |lOR]Rectifier IRFIBE20G HEXFET Power MOSFET • • • • • Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance D V D ss = 800V \ G y 3 ^DS on =

K2604

Abstract: 2SK2604 SC-65 marking ss100
Contextual Info: TOSHIBA 2SK2604 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2604 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS tt-MOSIII INDUSTRIAL APPLICATIONS Unit in mm 1 5.9 M A X. 03.2 ±0.2 Low Drain-Soree ON Resistance :

mosfet 10a 800v

Abstract: IRFAE50 diode 71A
Contextual Info: PD - 90574 IRFAE50 800V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAE50 BVDSS 800V RDS(on) 1.2Ω ID 7.1Α  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

SSF8N80A

Contextual Info: SSF8N80A Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS on = 1.5 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 5.5 A Improved Gate Charge Extended Safe Operating Area TO-3PF Lower Leakage Current : 25 µA (Max.) @ VDS = 800V

P12NK80Z

Abstract: B12NK80Z STB12NK80Z STB12NK80ZT4 STP12NK80Z
Contextual Info: STP12NK80Z - STB12NK80Z N-CHANNEL 800V - 0.65Ω - 10.5A TO-220 / D2PAK Zener-Protected SuperMESH Power MOSFET PRELIMINARY DATA TYPE STP12NK80Z STB12NK80Z • ■ ■ ■ ■ ■ VDSS RDS on ID Pw 800 V 800 V < 0.75 Ω < 0.75 Ω 10.5 A 10.5 A 190 W 190 W

mosfet 10a 800v

Abstract: IRFAE30
Contextual Info: PD - 90614 IRFAE30 800V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAE30 BVDSS 800V RDS(on) 3.2Ω ID 3.1Α The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.

Trimmer Cermet 502

Abstract: 500E-0249 ic 748 Spectrol 64y TRIMMER 50K 64Y-102 multiturn trimmer SPECTROL 500E-0243 64Y-103
Contextual Info: Trimmer, 3/8” Square Features •     Economically Priced Replaces the Spectrol 64Y Series RoHS compliant Industrial / Sealed IC style pins for easier board insertion Trimmer − Multiturn Cermet, Top Adjust T8e .374 9.5 .045 (1.15) .059 (1.5)

Contextual Info: Advanced SSW/I4N80A Power MOSFET FEATURES BVdss = 800 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^D S o n - ■ Lower Input Capacitance ■ Improved Gate Charge ID = 4 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 800V

Contextual Info: SSS3N80A A d v a n c e d Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA M ax.’ @ V DS = 800V ^ D S (o n =

Contextual Info: Advanced SSS7N80A Power MOSFET FEATURES - 800 V ^ D S o n = 1.8 Q. BVDSS • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge lD = 4 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 800V

Contextual Info: SSW/I3N80A A d v a n c e d Power MOSFET FEATURES BV dss = 800 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n - ■ Lower Input Capacitance In = 3 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 800V

Contextual Info: SSP3N80A FEATURES - 800 V ^DS on = 4.8 Q. • Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ VDS = 800V B Low Rds(0n) ■ 3.800 £1 (Typ.) CO Avalanche Rugged Technology

mosfet NTE2384

Abstract: NTE2384 mosfet for 900V, 6A
Contextual Info: NTE2384 MOSFET N-Channel Enhancement Mode, High Speed Switch Absolute Maximum Ratings: Drain-Source Voltage TJ = +25° to +150°C , VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V Drain-Gate Voltage (TJ = +25° to +150°C, RGS = 1MΩ), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . 900V

"12n80"

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N80 Preliminary Power MOSFET 12A, 800V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is

Contextual Info: T O S H IB A 2SK2604 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2604 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 1 5.9 M A X . • • • • 03.2 + 0.2

Contextual Info: Or, Call Customer Service at 1-800-548-6132 USA Only i ADVANCED INFORMATION S U B JE C T TO CH ANCE FEATU R ES Q Wideband Voltage Feedback OPERATIONAL AMPLIFIER APPLICATIONS • GAIN-BANDWIDTH: 1.6GHz • COMMUNICATIONS • S T A B L E IN GAINS > 2 • MEDICAL IMAGING

APTC80DDA15T3

Contextual Info: APTC80DDA15T3 Dual Boost chopper VDSS = 800V RDSon = 150mΩ max @ Tj = 25°C ID = 28A @ Tc = 25°C Super Junction MOSFET Power Module Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction 13 14 CR1 CR2 22 7 23

diode S6 39

Abstract: APTC80TDU15P
Contextual Info: APTC80TDU15P Triple dual Common Source VDSS = 800V RDSon = 150mΩ max @ Tj = 25°C ID = 28A @ Tc = 25°C Super Junction MOSFET Power Module G3 G1 G5 S3 S1 Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies D5 S5

5L0380R

Abstract: 5M0380R smps circuit diagram 5l0380R 5L0380r application 5L0380R DIAGRAM 5H0365R 5L0380 5H0380R 5M0365 mosfet 5L0380R
Contextual Info: www.fairchildsemi.com KA5x03xx-SERIES KA5H0365R, KA5M0365R, KA5L0365R KA5H0380R, KA5M0380R, KA5L0380R Fairchild Power Switch SPS Features Description • • • • • • • • • The SPS product family is specially designed for an off-line SMPS with minimal external components. The SPS consist